Diamond‐like carbon films prepared with a laser ion source

1988 ◽  
Vol 53 (3) ◽  
pp. 187-188 ◽  
Author(s):  
S. S. Wagal ◽  
E. M. Juengerman ◽  
C. B. Collins
Keyword(s):  
Carbon Films ◽  
Ion Source ◽  
Diamond Like Carbon ◽  
Laser Ion Source

Ion beam energy effects on structure and properties of diamond like carbon films deposited by closed drift ion source

Vacuum ◽  
2010 ◽  
Vol 84 (9) ◽  
pp. 1133-1137 ◽  
Author(s):  
Š. Meškinis ◽  
V. Kopustinskas ◽  
A. Tamulevičienė ◽  
S. Tamulevičius ◽  
G. Niaura ◽  
...  
Keyword(s):  
Beam Energy ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Source ◽  
Diamond Like Carbon ◽  
Structure And Properties

Study on the Adhesion of Diamond Like Carbon Films Using the Linear Ion Source with Nitriding Layers

2011 ◽  
Vol 44 (5) ◽  
pp. 190-195
Author(s):  
Chang-Seouk Shin ◽  
Min-Seok Park ◽  
Ah-Ram Kwon ◽  
Seung-Jin Kim ◽  
Won-Sub Chung
Keyword(s):  
Carbon Films ◽  
Ion Source ◽  
Diamond Like Carbon

In situ Monitoring of the Effects of Gas Mixtures on Ion Beam Depositions of Diamond-Like Carbon Films

1997 ◽  
Vol 502 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter ◽  
R. Monreal ◽  
P. B. Kosel ◽  
K. Miyoshi
Keyword(s):  
Oxygen Concentration ◽  
Mass Spectrometer ◽  
High Vacuum ◽  
Gas Mixtures ◽  
Carbon Films ◽  
Ion Source ◽  
Ultra High Vacuum ◽  
In Situ Monitoring ◽  
Diamond Like Carbon ◽  
Measuring Device

ABSTRACTA quadrupole mass spectrometer and a total ion-current measuring device have been utilized to monitor the ion compositions of gas mixtures of CH4/H2 and CH4/H2/O2 during the deposition for quality control and process optimization. An ultra high vacuum system using a 20 cm diameter RF excited (13.56 MIfz) ion gun and a four-axis substrate scanner has been developed for deposition of diamond-like carbon films for electrical, optical, and tribological applications. At a constant RF power of 179W, the mass spectra of gas mixture CH4/H2 (1:2.5) showed the most abundant ion is CH3+. Addition of O2 to the ion source has been found to affect the adhesion, deposition rate, and physical and chemical properties of the DLC films. By use of a mass spectrometer with and without the electron beam, the degree of ionization of CH4 was calculated to be about 10%. As the concentration of O2 was increased, all hydrocarbon ions decreased and H3O+ increased, resulting in a decrease in the film growth rate and an increase in etching of Si and glass substrates. In general, the optical bandgap, adsorption coefficients and refractive index decreased as oxygen concentration increased. Raman spectra showed the G-peak position shifted toward the graphitic peak with narrow peak width as oxygen concentration increased. At ultra high vacuum, the coefficient of friction increased with increased adhesion on substrates as oxygen was increased.

Investigations of diamond-like carbon films produced directly from an ion beam of industrial ion source with a cold cathode

1997 ◽  
Vol 46 (1-3) ◽  
pp. 137-140 ◽  
Author(s):  
K.L. Enisherlova ◽  
Yu.A. Kontsevoi ◽  
E.N. Chervyakova ◽  
E.A. Mitrofanov ◽  
Yu.P. Maishev
Keyword(s):  
Ion Beam ◽  
Carbon Films ◽  
Ion Source ◽  
Diamond Like Carbon ◽  
Cold Cathode

SYNTHESIS OF DIAMOND-LIKE CARBON FILMS USING A BI-MODAL SPUTTER DEPOSITION WITH Xe IONS

2007 ◽  
Vol 14 (04) ◽  
pp. 735-738 ◽  
Author(s):  
MAKSYM RYBACHUK ◽  
JOHN M. BELL
Keyword(s):  
Ion Beam ◽  
Incident Beam ◽  
Carbon Films ◽  
Ion Source ◽  
Diamond Like Carbon ◽  
Additional Energy ◽  
Carbon Target ◽  
Alternative Approach ◽  
Ion Energies ◽  
Grazing Angles

An alternative approach to a sputtering process was examined where a single incident beam of Xe ions was used to simultaneously sputter a carbon target and bombard a growing film. The hypothesis that by positioning a substrate at grazing angles to the central axis of the ion beam, the additional energy provided will be beneficial to the formation of sp3 bonding. Amorphous carbon (a- C ) and diamond-like carbon (DLC) films were synthesized by sputtering a graphite target from a Kaufmann-type ion source. Experimental results revealed that when a substrate was placed at grazing angles due to a secondary resputtering process, it was not possible to fabricate DLCs but only sp2-rich polymeric a- C . For DLC synthesis the optimal angles of the target and the substrate to the ion flux were found to be 30° and 0°, respectively, and the ion energies of 0.8–1 keV.

Cesium-Enhanced R. F. Magnetron Deposition of Carbon Nitride and Diamond-Like Carbon Films

1997 ◽  
Vol 498 ◽  
Author(s):  
I. H. Murzin ◽  
M. A. Hussain ◽  
G. S. Tompa
Keyword(s):  
Carbon Nitride ◽  
Low Voltage ◽  
Carbon Films ◽  
Ion Source ◽  
Diamond Like Carbon ◽  
Carbon Ions ◽  
Nitrogen Gas ◽  
Carbon Target ◽  
Ion Extraction ◽  
Surface Work

ABSTRACTWe report the design, manufacturing, and testing of a new cesium enhanced negative carbon ion source that can be useful to synthesize hard and/or electron emitting carbon nitride and diamond-like carbon (DLC) thin films. The design of the source includes a conventional magnetron-sputtering gun, low voltage ion extraction lenses, and a cesium oven to provide cesium vapor for formation of a fractional mono layer of Cs on the carbon target. Cs reduces the surface work function of the carbon target and enhances the emission of negative carbon ions. Argon and argon-nitrogen gas mixtures were used to ignite and sustain the plasma in the chamber. We compare the properties of carbon nitride and DLC films deposited with and without cesium. Nitrogen composition in the Ar-N2 gas mixture was observed to be an important process parameter affecting mechanical properties of the film. The effect of the Cs oven temperature on deposition rate and current absorbed at the substrate was also investigated for RF powers from 0 to 150 W.

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