Investigation of the Optical Properties of Diamond-Like Carbon Films

1997 ◽  
Vol 498 ◽  
Author(s):  
B. K. Kim ◽  
T. A. Grotjohn
Keyword(s):  
Optical Properties ◽  
Plasma Reactor ◽  
Ionic Species ◽  
Carbon Films ◽  
Film Properties ◽  
Ecr Plasma ◽  
Argon Ions ◽  
Hydrogenated Amorphous ◽  
Ion Species ◽  
Deposition Conditions

ABSTRACTHydrogenated-amorphous carbon films are deposited in a microwave ECR plasma reactor with an rf biased substrate holder using methane-argon and acetylene-argon gas mixtures. The film's optical properties are characterized versus deposition conditions including pressure (1–5 mTorr), rf induced bias (-100 to 20 volts), and argon/hydrocarbon flow ratio. The acetylene-argon discharges show that ion species formed from acetylene are more important than the argon ions, conversely, the methane-argon discharges showed that argon ions are a major ionic species in the deposition. The influence of the thickness of insulating substrates is studied and the feasibility of depositing multilayer a-C:H films with different film properties in each layer is demonstrated.

scholarly journals Optical Properties of Hydrogenated Amorphous Carbon Films Grown From Methane Plasma

1985 ◽  
Vol 47 ◽  
Author(s):  
J. J. Pouch ◽  
S. A. Alterovitz ◽  
J. D. Warner ◽  
D. C. Liu ◽  
W. A. Lanford
Keyword(s):  
Growth Rate ◽  
Optical Properties ◽  
Carbon Films ◽  
Ion Sputtering ◽  
Amorphous Carbon Films ◽  
Deposition Power ◽  
Optical Bandgaps ◽  
Inp Substrates ◽  
Hydrogenated Amorphous ◽  
Reaction Profile

ABSTRACTWe have used a 30 kHz ac glow discharge formed from methane gas to grow carbon films on InP substrates. Both the growth rate, and the relative Ar ion sputtering rate at 3 keV varied monotonically with deposition power. The Ar ion etchigg rate of the films decreased with deposition power. Results from the 15N nuclear reaction profile experiments indicated a slight drop in the hyorogen concentration as more energy was dissipated in the ac discharge. Values for the inoex of refraction and extinction coefficient ranged from 1.721 to 1.910 and 0 to -0.188, respectively. Optical bandgaps as high as 2.34 eV were determined.

OPTICAL PROPERTIES OF TRIMETHYLBORON AND NITROGEN CODOPED AMORPHOUS CARBON FILMS

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1096-1100 ◽  
Author(s):  
Y. HAYASHI ◽  
S. ISHIKAWA ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. ADACHI ◽  
...  
Keyword(s):  
Optical Properties ◽  
Amorphous Carbon ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Rf Plasma ◽  
Amorphous Carbon Films ◽  
Fabry Perot ◽  
Pl Emission ◽  
Hydrogenated Amorphous

We report on the efficient photoluminescence (PL) and optical properties of hydrogenated amorphous carbon thin films codoped with nitrogen and trimethylboron (TMB) grown by rf plasma-enhanced chemical vapor deposition at room temperature. The study clearly shows the observation of discrete PL emission peaks. The PL intensity of the film deposited with 20 sccm TMB is more than 103 times than that of the film deposited without TMB. The change of optical bandgap and PL emission energy with TMB flow rate are discussed based on sp3 and sp2 C networks. Angular dependence of the PL spectra revealed that the origin of multiple sharp peaks is due to Fabry-Perot cavity interference effect.

Characterization of amorphous hydrogenated carbon films deposited from CO–C2H2 mixtures in a distributed ECR plasma reactor

2002 ◽  
Vol 151-152 ◽  
pp. 165-169 ◽  
Author(s):  
F. Thièry ◽  
C. Vallée ◽  
Y. Pauleau ◽  
F. Gaboriau ◽  
A. Lacoste ◽  
...  
Keyword(s):  
Plasma Reactor ◽  
Carbon Films ◽  
Ecr Plasma ◽  
Amorphous Hydrogenated Carbon

Properties of Doped a-Si:H Films Deposited by Ecr Plasma CVD

1990 ◽  
Vol 204 ◽  
Author(s):  
H. Murai ◽  
M. Hayama ◽  
K. Kobayashi ◽  
T. Yamazaki
Keyword(s):  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Dark Conductivity ◽  
Deposition Condition ◽  
Plasma Cvd ◽  
Film Properties ◽  
Plasma Properties ◽  
Hydrogen Incorporation ◽  
Ecr Plasma ◽  
Hydrogenated Amorphous

ABSTRACTPhosphorous doped hydrogenated amorphous silicon films were deposited by microwave electron cyclotron resonance (ECR) plasma CVD at a substrate temperature of 100°C. Electrical, optical and hydrogen-incorporation properties of the films have been investigated. By optimizing the deposition condition, the dark conductivity of 3×10−4S/cm is realized without subsequent annealing. Relations between the film properties and ECR plasma properties have been studied by means of optical emission spectroscopy (OES) and quadrupole mass spectroscopy (QMS).

Role of RF Power and Gas Mixture in Some Optical and Photoluminescence Properties of Dual-Plasma a-C:H Films

1998 ◽  
Vol 508 ◽  
Author(s):  
T. Heitz ◽  
C. Godet ◽  
J.E. Bouree ◽  
B. Drevillon ◽  
V. Chu ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Plasma Reactor ◽  
Carbon Films ◽  
Polymer Chains ◽  
Visible Range ◽  
Cross Linking ◽  
Rf Power ◽  
Photoluminescence Properties ◽  
Hydrogenated Amorphous

AbstractElectronic properties of polymer-like hydrogenated amorphous carbon films, grown in a RF-assisted microwave plasma reactor, have been studied using optical absorption and photoluminescence spectroscopies. Using a Forouhi-Bloomer parametrization of π-π* transitions, two regimes are evidenced for increasing C atom density : a decrease of the optical gap Eππ* at constant (H/H+C) content attributed to sp2C clustering, followed by some H elimination with minor changes in Eππ* due to cross-linking of polymer chains. The photoluminescence efficiency in the visible range (peak at ≈ 2.3 eV) is found to decrease over four orders of magnitude at the onset of the cross-linking regime. This quenching is attributed to stress-induced non-radiative centers.

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