Low-Field Colossal Magnetoresistance in Manganite Tunnel Junctions

1997 ◽  
Vol 494 ◽  
Author(s):  
J. Nassar ◽  
M. Viret ◽  
M. Drouet ◽  
J. P. Contour ◽  
C. Fermon ◽  
...  
Keyword(s):  
Spin Polarization ◽  
High Field ◽  
Colossal Magnetoresistance ◽  
Tunnel Junctions ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Behaviour ◽  
Low Field ◽  
Tunnel Barriers ◽  
Magnetoresistance Ratio

ABSTRACTLarge magnetoresistance values are obtained on tunnel junctions epitaxially deposited by pulsed-laser deposition and consisting of ferromagnetic manganite La0.67Sr0.33MnO3 electrodes separated by various tunnel barriers: SrTiO3, PrBaCu2.8Ga0.2O7 and CeO2. The magnetoresistance can be decomposed into a low-field and a high-field contribution. The latter is attributed to the presence of canted interfacial manganite phases, as confirmed by the temperature behaviour of the resistance. A low-field magnetoresistance ratio of 450% below 100 Oe is obtained on a sample with a SrTiO3 barrier, indicating a spin polarization value in excess of 0.83 for the manganite.

Low-Field Magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ ThinFilm Fabricated by Using Pulsed-Laser Deposition

2008 ◽  
Vol 53 (9(5)) ◽  
pp. 2427-2430 ◽  
Author(s):  
N.V. Dai ◽  
N.C. Thuan ◽  
L.V. Hong ◽  
N.X. Phuc ◽  
Y.P. Lee
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Low Field

Comparison of Sol-Gel Derived and Pulsed Laser Deposited Epitaxial La0.67Ca0.33MnO3 Films for IR Bolometer

2004 ◽  
Vol 811 ◽  
Author(s):  
Rickard Fors ◽  
Annika Pohl ◽  
Sergey Khartsev ◽  
Alexander Grishin ◽  
Gunnar Westin
Keyword(s):  
Colossal Magnetoresistance ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Maximum Temperature ◽  
Post Annealing ◽  
Out Of Plane ◽  
Temperature Coefficient Of Resistivity ◽  
Gel Technique ◽  
Sol Gel Films

ABSTRACTEpitaxial La0.67Ca0.33MnO3 films have been prepared on LaAlO3 crystals by pulsed laser deposition (PLD) and by a novel all-alkoxide sol-gel technique. Different out-of-plane lattice parameters are found for the as-prepared films, and scanning electron microscopy shows a more porous structure for sol-gel films as compared to PLD films. These differences are largely removed by post-annealing at 1000 °C. Transport measurements show maximum temperature coefficient of resistivity of 8.2 % K−1 at 258 K (PLD) and 6.1 % K−1 at 241 K (sol-gel) and colossal magnetoresistance at 7 kOe of 35 % at 263 K (PLD) and 32 % at 246 K (sol-gel).

Observation of Large Low Field Magnetoresistance in Ramp-Edge Tunneling Junctions Based on Doped Manganite Ferromagnetic Electrodes and A SrTiO3 Insulator

1997 ◽  
Vol 494 ◽  
Author(s):  
C. Kwon ◽  
Q. X. Jia ◽  
Y. Fan ◽  
M. F. Hundley ◽  
D. W. Reagor ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Pulsed Laser ◽  
Relative Orientation ◽  
Laser Deposition ◽  
Multilayer Thin Films ◽  
Ion Milling ◽  
Edge Geometry ◽  
Ferromagnetic Electrodes ◽  
Low Field

ABSTRACTWe report the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La0.7Sr0.3)MnO3 ferromagnetic electrodes and a SrTiO3 insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices were patterned using photolithography and ion milling. As expected from the spin-dependent tunneling, the junction magnetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30 % is observed below 300 Oe at low temperatures (T < 100 K).

Colossal magnetoresistance behavior in LaCaMnO/CeO2/Si (100) multilayers grown by pulsed laser deposition (abstract)

1997 ◽  
Vol 81 (8) ◽  
pp. 5759-5759 ◽  
Author(s):  
Wei Zhang ◽  
Ian W. Boyd ◽  
Martin Elliott ◽  
William Herrenden-Harkerand
Keyword(s):  
Pulsed Laser Deposition ◽  
Colossal Magnetoresistance ◽  
Pulsed Laser ◽  
Laser Deposition

Growth and Observation of Low-Field Giant Magnetoresistance in La0.7Sr0.3MnO3/ZnO Superlattice Structures

2006 ◽  
Vol 6 (3) ◽  
pp. 612-617
Author(s):  
Ashutosh Tiwari ◽  
J. Narayan
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Giant Magnetoresistance ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
New Class ◽  
Superlattice Structure ◽  
Low Field ◽  
Superlattice Structures

We report the growth of a new class of superlattice structure, consisting of alternate layers of La0.7Sr0.3MnO3 (LSMO) and ZnO, which exhibits giant magnetoresistance at low fields. These superlattices were fabricated using a novel pulsed-laser deposition technique with a specially designed target assembly. Giant magnetoresistance of >250% has been observed in these structures in current-in-plane configuration on the application of just ∼400 Gauss of magnetic field over the broad temperature range 15–200 K. Observation of giant magnetoresistance at such low magnetic fields is a groundbreaking step in the field of novel magnetic materials and devices.

Laser-Induced Thermoelectric Voltage in La0.5Pr0.5MnO3 Thin Film

2011 ◽  
Vol 287-290 ◽  
pp. 2248-2251
Author(s):  
Qian Qian Hua ◽  
Li Sheng Zhang ◽  
Pei Jie Wang
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Colossal Magnetoresistance ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thermoelectric Voltage ◽  
First Time

The laser-induced thermoelectric voltage was observed for the first time in praseodymium doped LaMnO3 thin film grown on LaAlO3 single crystal vicinal cut substrates by pulsed laser deposition. The experimental data for La0.5Pr0.5MnO3 showed a good liner relation between the voltage and the laser energy. The result suggested that the anisotropic Seebeck effect were responsible for the voltage signals in colossal magnetoresistance manganites thin film.

scholarly journals Nanostructured Manganite Films Grown by Pulsed Injection MOCVD: Tuning Low- and High-Field Magnetoresistive Properties for Sensors Applications

Sensors ◽  
2022 ◽  
Vol 22 (2) ◽  
pp. 605
Author(s):  
Voitech Stankevic ◽  
Nerija Zurauskiene ◽  
Skirmantas Kersulis ◽  
Valentina Plausinaitiene ◽  
Rasuole Lukose ◽  
...  
Keyword(s):  
High Field ◽  
Colossal Magnetoresistance ◽  
Film Plane ◽  
Magnetic Sensors ◽  
Sensor Applications ◽  
Operation Temperature ◽  
Low Field ◽  
Wide Range ◽  
Pulsed Injection ◽  
Crystal Quartz

The results of colossal magnetoresistance (CMR) properties of La0.83Sr0.17Mn1.21O3 (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single crystal quartz, polycrystalline Al2O3, and amorphous Si/SiO2 substrates were nanostructured with column-shaped crystallites spread perpendicular to the film plane. It was found that morphology, microstructure, and magnetoresistive properties of the films strongly depend on the substrate used. The low-field MR at low temperatures (25 K) showed twice higher values (−31% at 0.7 T) for LSMO/quartz in comparison to films grown on the other substrates (−15%). This value is high in comparison to results published in literature for manganite films prepared without additional insulating oxides. The high-field MR measured up to 20 T at 80 K was also the highest for LSMO/quartz films (−56%) and demonstrated the highest sensitivity S = 0.28 V/T at B = 0.25 T (voltage supply 2.5 V), which is promising for magnetic sensor applications. It was demonstrated that Mn excess Mn/(La + Sr) = 1.21 increases the metal-insulator transition temperature of the films up to 285 K, allowing the increase in the operation temperature of magnetic sensors up to 363 K. These results allow us to fabricate CMR sensors with predetermined parameters in a wide range of magnetic fields and temperatures.

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