Observation of Large Low Field Magnetoresistance in Ramp-Edge Tunneling Junctions Based on Doped Manganite Ferromagnetic Electrodes and A SrTiO3 Insulator

1997 ◽  
Vol 494 ◽  
Author(s):  
C. Kwon ◽  
Q. X. Jia ◽  
Y. Fan ◽  
M. F. Hundley ◽  
D. W. Reagor ◽  
...  

ABSTRACTWe report the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La0.7Sr0.3)MnO3 ferromagnetic electrodes and a SrTiO3 insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices were patterned using photolithography and ion milling. As expected from the spin-dependent tunneling, the junction magnetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30 % is observed below 300 Oe at low temperatures (T < 100 K).

2003 ◽  
Vol 783 ◽  
Author(s):  
K. F. Astafiev ◽  
V. O. Sherman ◽  
M. Cantoni ◽  
A. K. Tagantsev ◽  
N. Setter ◽  
...  

ABSTRACTThe results of structural and electrical characterizations of SrTiO3 thin films deposited onto LaAlO3 substrates by pulsed laser deposition technique are presented. The appearance of the ferroelectric phase in these films has been experimentally documented, the transition temperature being in the range of 90–120K. The hysteresis loops have been monitored in a wide temperature range by using thin film planar capacitors, the driving field being predominantly in the plane of the film. The switching properties of the films has been studied at low temperatures (∼25K) and well saturated loops have been observed with relatively low coercive field (<6kV/cm for 10μm gap). The presence of the imprint phenomenon has been also found at low temperatures.The microstructure of the investigated SrTiO3 thin films has been studied by using a high resolution transmission electron microscope (TEM). It has been found that the annealed and as-deposited thin films, being of the same composition, have quite different microstructures. The difference observed in the polarization response of the films is related to that in their microstructure.


2001 ◽  
Vol 260 (1) ◽  
pp. 201-206 ◽  
Author(s):  
Jianguo Zhu ◽  
Dingquan Xiao ◽  
S. B. Palmer

2012 ◽  
Vol 133 (1) ◽  
pp. 299-303 ◽  
Author(s):  
G. Balakrishnan ◽  
P. Kuppusami ◽  
S. Murugesan ◽  
C. Ghosh ◽  
R. Divakar ◽  
...  

2011 ◽  
Vol 64 (3) ◽  
pp. 297-299 ◽  
Author(s):  
G. Balakrishnan ◽  
P. Kuppusami ◽  
S. Murugesan ◽  
Chanchal Ghosh ◽  
Divakar Ramachandran ◽  
...  

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