Growth and Observation of Low-Field Giant Magnetoresistance in La0.7Sr0.3MnO3/ZnO Superlattice Structures

2006 ◽  
Vol 6 (3) ◽  
pp. 612-617
Author(s):  
Ashutosh Tiwari ◽  
J. Narayan
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Giant Magnetoresistance ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
New Class ◽  
Superlattice Structure ◽  
Low Field ◽  
Superlattice Structures

We report the growth of a new class of superlattice structure, consisting of alternate layers of La0.7Sr0.3MnO3 (LSMO) and ZnO, which exhibits giant magnetoresistance at low fields. These superlattices were fabricated using a novel pulsed-laser deposition technique with a specially designed target assembly. Giant magnetoresistance of >250% has been observed in these structures in current-in-plane configuration on the application of just ∼400 Gauss of magnetic field over the broad temperature range 15–200 K. Observation of giant magnetoresistance at such low magnetic fields is a groundbreaking step in the field of novel magnetic materials and devices.

Giant Magnetoresistance Behavior in Epitaxial Nd0.7Sr0.3MnO3−δ and La0.67Ba0.33MnO3−δ Thin Films

1995 ◽  
Vol 384 ◽  
Author(s):  
G.C. Xiong ◽  
Q. Li ◽  
H.L. Ju ◽  
J. Wu ◽  
L. Senapati ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Sample Preparation ◽  
Manganese Oxide ◽  
Giant Magnetoresistance ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxygen Stoichiometry ◽  
Preparation Conditions ◽  
And Diffusion

ABSTRACTEpitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films with large magnetoresistance ratios have been prepared by pulsed laser deposition. Huge negative magnetoresistance ratios of -ΔR/RH > 1×106 % were obtained at 60 K and a magnetic field of 8 T in a Nd0.7Sr0.3MnO3-δ film. The influence of sample preparation conditions on the resistivity behavior of these films has been studied. Results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films.

LOW-FIELD INHOMOGENEITY-INDUCED MAGNETORESISTANCE IN SILICON

SPIN ◽  
2012 ◽  
Vol 02 (01) ◽  
pp. 1250002 ◽  
Author(s):  
XIAOZHONG ZHANG ◽  
CAIHUA WAN
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Giant Magnetoresistance ◽  
High Sensitivity ◽  
Boundary Region ◽  
Charge Carriers ◽  
Silicon Devices ◽  
Low Field ◽  
Silicon Based ◽  
The Magnetic Field

We show that inhomogeneity-induced magnetoresistance (IMR) in lightly doped silicon can be significantly enhanced through the injection of minority charge carriers, and then tuned by an applied current to have an onset at low magnetic fields. We designed an IMR device in which, the inhomogeneity is provided by the p–n boundary formed between regions where conduction is dominated by the minority and majority charge carriers respectively; application of a magnetic field distorts the current in the boundary region, resulting in large magnetoresistance. The room-temperature field sensitivity of our IMR device at low fields was remarkably improved, with magnetoresistance reaching 10% at 0.07 T and 100% at 0.2 T, approaching the performance of commercial giant magnetoresistance devices. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, being based on a conventional silicon platform, it should be possible to integrate with existing silicon devices and so aid the development of silicon-based magnetoelectronics.

XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

2010 ◽  
Vol 197 (1-3) ◽  
pp. 129-134 ◽  
Author(s):  
J. J. Dolo ◽  
H. C. Swart ◽  
E. Coetsee ◽  
J. J. Terblans ◽  
O. M. Ntwaeaborwa ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Luminescence Properties ◽  
Xps Analysis ◽  
Deposition Technique

Columnar Growth of BiFeO3Films Prepared by Magnetic-field-assisted Pulsed Laser Deposition

2014 ◽  
Vol 466 (1) ◽  
pp. 63-73 ◽  
Author(s):  
T. Kanashima ◽  
J. M. Park ◽  
D. Ricinschi ◽  
M. Okuyama
Keyword(s):  
Magnetic Field ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Columnar Growth

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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