High Deposition Rate Amorphous Silicon Alloy Xerographic Photoreceptor

1985 ◽  
Vol 49 ◽  
Author(s):  
S.J. Hudgens ◽  
A.G. Johncock
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Decay Time ◽  
Plasma Deposition ◽  
Deposition Process ◽  
Utilization Efficiency ◽  
High Deposition Rate ◽  
High Quality ◽  
Silicon Alloy ◽  
Gas Utilization

AbstractA new multilayer amorphous silicon alloy photoreceptor has been deposited at rates exceeding 36 µm/hr. using 2.45 GHz microwave glow discharge. The device whose structure is Al/a-Si:H:F (B-300)/a-Si:H:F (B-10)/a-Si:H:F:C is deposited in a powderless plasma deposition process which exhibits gas utilization efficiency approaching 100%. The xerographic performance of a 28µm device is: Vsat∼1100 V for a +7 KV corona; dark half decay time ≃5 sec; and photosensitivity ∼0.3 µJ/cm2 at λ = 650 nm. Stable, high quality xerographic images are obtained with these photoreceptors.

Effect of Excitation Frequency on the Performance of Amorphous Silicon Alloy Solar Cells

1998 ◽  
Vol 507 ◽  
Author(s):  
J. Yang ◽  
S. Sugiyama ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Excitation Frequency ◽  
Deposition Rates ◽  
Solar Cell Performance ◽  
Single Junction ◽  
Silicon Alloy ◽  
Double Junction ◽  
Junction Structure

ABSTRACTWe have studied amorphous silicon alloy solar cells made by using a modified-very-highfrequency glow discharge at 75 MHz with a deposition rate of ∼6 Å/s. The solar cell performance is compared with those made from conventional glow discharge at 13.56 MHz with lower deposition rates. Cells made at ∼6 Å/s with 75 MHz showed comparable stabilized efficiency to those made at ∼3 Å/s with 13.56 MHz. The best performance, however, was obtained with ∼1 Å/s, including a stabilized 9.3% a-Si alloy single-junction cell employing conventional glow discharge technique. Using 75 MHz, we have achieved 11.1% and 10.0% initial active-area efficiencies for a-Si alloy and a-SiGe alloy n i p cells, respectively. An initial efficiency of 11.0% has also been obtained in a dual bandgap double-junction structure.

scholarly journals Sputter Deposition of Semiconductor Superlattices for Thermoelectric Applications

1996 ◽  
Vol 450 ◽  
Author(s):  
Andrew V. Wagner ◽  
Ronald J. Foreman ◽  
Joseph C. Farmer ◽  
Troy W. Barbee
Keyword(s):  
Film Growth ◽  
Lead Telluride ◽  
Deposition Process ◽  
Growth Conditions ◽  
Sputter Deposition ◽  
High Rate ◽  
Dramatic Improvement ◽  
High Deposition Rate ◽  
High Quality ◽  
Quantum Confined

ABSTRACTTheoretical dramatic improvement of the thermoelectric properties of materials by using quantum confinement in novel semiconductor nanostructures has lead to considerable interest in the thermoelectric community. Therefore, we are exploring the critical materials issues for fabrication of quantum confined structures by magnetron sputtering in the lead telluride and bismuth telluride families of materials. We have synthesized modulated structures from thermoelectric materials with bilayer periods of as little as 3.2 nm and shown that they are stable at deposition temperatures high enough to grow quality films. Issues critical to high quality film growth have been investigated such as nucleation and growth conditions and their effect on crystal orientation and growth morphology. These investigations show that nucleating the film at a temperature below the growth temperature of optimum electronic properties produces high quality films. Our work with sputter deposition, which is inherently a high rate deposition process, builds the technological base necessary to develop economical production of these advanced materials. High deposition rate is critical since, even if efficiencies comparable with CFC based refrigeration systems can be achieved, large quantities of quantum confined materials will be necessary for cost-competitive uses.

Growth of Amorphous Silicon Materials and Devices with Improved Stability

1994 ◽  
Vol 336 ◽  
Author(s):  
Vikram L. Dalai ◽  
E. X. Ping ◽  
Sanjeev Kaushal ◽  
Mark Leonard ◽  
Mohan K. Bhan ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
High Temperatures ◽  
Low Pressure ◽  
High Quality ◽  
Ecr Plasma ◽  
Reactive Plasma ◽  
Improved Stability ◽  
Silicon Materials ◽  
The Stability

ABSTRACTWe discuss the growth of a-Si:H Materials and devices using a low pressure remote ECR plasma. We show that by using this plasma in an etching mode with a high H flux, we can grow high quality a-Si:H films at high temperatures (325–375 C). These films have significantly improved stability compared to standard a-Si:H films deposited using glow discharge. We can further improve the stability of these films by incorporating minute (sub ppm levels) of boron during growth. We also report on the fabrication of devices at these temperatures using this very reactive plasma. We discuss the precautions taken to obtain good devices, and discuss how the devices can be further improved.

Hyrogenated Amorphous Silicon with High Growth Rate, Gas Utilization and Homogeneous Deposition by Amplitude Modulated Vhf-Pecvd for Solar Cell Application

2002 ◽  
Vol 715 ◽  
Author(s):  
J.K Rath ◽  
A.C.W. Biebericher ◽  
R. Jimenez Zambrano ◽  
R.E.I. Schropp ◽  
W. F. van der Weg ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
High Growth ◽  
Utilization Efficiency ◽  
Gas Flows ◽  
Solar Cell Application ◽  
Gas Utilization ◽  
Radio Frequency Excitation ◽  
Frequency Excitation

AbstractHydrogenated amorphous silicon samples have been deposited by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD), using a square-wave amplitudemodulated radio-frequency excitation. It is observed that the gas-utilization efficiency improves by a considerable amount when amplitude modulation is combined with a reduction in the gas flows. Using a conventional continuous wave (cw) 50 MHz plasma with SiH4 and H2 gas flows of 30 sccm each at a pressure of 0.2 mbar, the gas-utilization efficiency is about 8%. It increases up to 50%, by modulating the amplitude of the radio-frequency excitation signal and reducing both gas flows to 10 sccm, keeping the pressure constant. In this case, the deposition rate amounted to 0.55 nm/s; which is twice as large as compared to the deposition rate of a cw deposition. Device-quality opto-electronic properties are obtained under these conditions. The refractive index at 2 eV is about 4.25 and the microstructure parameter has a value around 0.02. The materials exhibited a low defect density (CPM) which is in the order of 3-8x1015 per cubic centimeter and photo-to-dark-conductivity ratio of 4-6x106. N-i-p solar cells of size 0.16 cm2 deposited on 10cmx10cm stainless steel (SS) substrate in the configuration SS/n-a-Si:H/i-a- Si:H/buffer/p-μc-Si/ITO/Ag grid (without back reflector) using amorphous silicon i-layer made by amplitude-modulated VHF plasma CVD showed an efficiency of 6.5%. This is a similar efficiency to the cell with standard device-quality cw a-Si:H in the same n-i-p structure, but at a high growth of 0.55 nm/s and gas utilization of ∼50%.

Amorphous Silicon and Silicon Germanium Alloy Solar Cells Deposited by VHF at High Rates

2001 ◽  
Vol 664 ◽  
Author(s):  
Jeffrey Yang ◽  
Baojie Yan ◽  
Jozef Smeets ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Buffer Layers ◽  
Very High Frequency ◽  
High Quality ◽  
Deposition Rates ◽  
Sige Alloy ◽  
Rf Glow Discharge

ABSTRACTA modified very high frequency (MVHF) glow discharge technique is used to deposit amorphous silicon (a-Si) and amorphous silicon-germanium (a-SiGe) alloy solar cells at high deposition rates. High quality a-Si alloy solar cells have been obtained by using MVHF at deposition rates up to ∼10 Å/s. The cells show good initial and stabilized efficiencies comparable to those obtained from conventional radio-frequency (RF) glow discharge deposition at low rates (∼1 Å/s). However, high quality a-SiGe alloy solar cells are more difficult to achieve at high deposition rates. In this paper, we present the progress made on a-SiGe alloy solar cells by incorporating bandgap profiling and appropriate buffer layers. Using the improved a-SiGe alloy solar cells, a-Si/a-SiGe tandem configurations are made and results presented.

Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon

1999 ◽  
Vol 38 (Part 1, No. 7B) ◽  
pp. 4535-4537 ◽  
Author(s):  
Wataru Futako ◽  
Tomoko Takagi ◽  
Tomonori Nishimoto ◽  
Michio Kondo ◽  
Isamu Shimizu ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Gas Phase ◽  
Discharge Plasma ◽  
High Rate ◽  
Glow Discharge Plasma ◽  
High Quality ◽  
Rf Glow Discharge
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