scholarly journals At the limit of total silane gas utilization for preparation of high-quality microcrystalline silicon solar cells at high-rate plasma deposition

2011 ◽  
Vol 98 (21) ◽  
pp. 211501 ◽  
Author(s):  
A. Gordijn ◽  
A. Pollet-Villard ◽  
F. Finger
Keyword(s):  
Solar Cells ◽  
Plasma Deposition ◽  
High Rate ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
High Quality ◽  
Gas Utilization

The role of plasma induced substrate heating during high rate deposition of microcrystalline silicon solar cells

2006 ◽  
Vol 511-512 ◽  
pp. 562-566 ◽  
Author(s):  
M.N. van den Donker ◽  
R. Schmitz ◽  
W. Appenzeller ◽  
B. Rech ◽  
W.M.M. Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Rate ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Substrate Heating

scholarly journals Impact of secondary gas-phase reactions on microcrystalline silicon solar cells deposited at high rate

2010 ◽  
Vol 96 (23) ◽  
pp. 233508 ◽  
Author(s):  
G. Parascandolo ◽  
R. Bartlome ◽  
G. Bugnon ◽  
T. Söderström ◽  
B. Strahm ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gas Phase ◽  
High Rate ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Gas Phase Reactions

Reduction of the phosphorus contamination for plasma deposition of p—i—n microcrystalline silicon solar cells in a single chamber

2010 ◽  
Vol 19 (9) ◽  
pp. 098102 ◽  
Author(s):  
Wang Guang-Hong ◽  
Zhang Xiao-Dan ◽  
Xu Sheng-Zhi ◽  
Zheng Xin-Xia ◽  
Wei Chang-Chun ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Deposition ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Single Chamber ◽  
Phosphorus Contamination

Key issues for fabrication of high quality amorphous and microcrystalline silicon solar cells

2006 ◽  
Vol 501 (1-2) ◽  
pp. 243-246 ◽  
Author(s):  
M. Kondo ◽  
T. Matsui ◽  
Y. Nasuno ◽  
H. Sonobe ◽  
S. Shimizu
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
High Quality ◽  
Key Issues

High Rate Deposition of Microcrystalline Silicon Solar Cells Using 13.56 MHz PECVD – Prerequisites and Limiting Factors

2002 ◽  
Vol 715 ◽  
Author(s):  
Tobias Roschek ◽  
Tobias Repmann ◽  
Oliver Kluth ◽  
Joachim Müller ◽  
Bernd Rech ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Deposition ◽  
Chemical Vapor ◽  
High Rate ◽  
Limiting Factors ◽  
Pulsed Plasma ◽  
Microcrystalline Silicon ◽  
Electrode Distance ◽  
Deposition Parameters ◽  
Wide Range

AbstractMicrocrystalline silicon (μìc-Si:H) solar cells were prepared in a wide range of deposition parameters using high pressure 13.56 MHz plasma-enhanced chemical vapor deposition (PECVD). Focus was on the influence of deposition pressure, electrode distance and the application of a pulsed plasma on high rate deposition of solar cells. At electrode distances between 5 and 20 mm solar cells with efficiencies >8 % were prepared. A medium electrode distance of 10 mm yielded best device performance. Pulsed plasma deposition leads to good results at medium deposition rates of ∼5 Å/s, for higher rates a strong decrease of efficiency was observed. The highest efficiencies in a small area reactor were 8.9 % for CW and 8.4 % for pulsed plasma. We also succeeded in preparing μc-Si:H and a-Si:H/μc-Si:H solar cells in a 30x30 cm2 reactor with efficiencies of 9 % and 12.5 %, respectively.

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