Growth of Amorphous Silicon Materials and Devices with Improved Stability

1994 ◽  
Vol 336 ◽  
Author(s):  
Vikram L. Dalai ◽  
E. X. Ping ◽  
Sanjeev Kaushal ◽  
Mark Leonard ◽  
Mohan K. Bhan ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
High Temperatures ◽  
Low Pressure ◽  
High Quality ◽  
Ecr Plasma ◽  
Reactive Plasma ◽  
Improved Stability ◽  
Silicon Materials ◽  
The Stability

ABSTRACTWe discuss the growth of a-Si:H Materials and devices using a low pressure remote ECR plasma. We show that by using this plasma in an etching mode with a high H flux, we can grow high quality a-Si:H films at high temperatures (325–375 C). These films have significantly improved stability compared to standard a-Si:H films deposited using glow discharge. We can further improve the stability of these films by incorporating minute (sub ppm levels) of boron during growth. We also report on the fabrication of devices at these temperatures using this very reactive plasma. We discuss the precautions taken to obtain good devices, and discuss how the devices can be further improved.

Improved Stability Against Light-Exposure in Deuterated Amorphous Silicon Alloy Solar Cells

1997 ◽  
Vol 467 ◽  
Author(s):  
S. Sugiyama ◽  
J. Yang ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Light Exposure ◽  
The Other ◽  
Silicon Alloy ◽  
Improved Stability ◽  
The Stability ◽  
Microstructure Of The Material ◽  
Hydrogen Effusion

ABSTRACTWe have studied light-induced degradation in hydrogenated and deuterated amorphous silicon alloy solar cells in which intrinsic layers were deposited by using SiH4+H2 and SiD4+D2 gas mixtures respectively. Replacing hydrogen with deuterium in the intrinsic layer of the cell improves stability against light exposure. On the other hand, cells in which intrinsic layers were deposited from SiD4+H2 and SiH4+D2 do not show any improvement in stability. This result shows that improved stability in deuterated cell does not originate from simple replacement of hydrogen with deuterium. From deuterium/hydrogen effusion measurements, we found similar effusion at low temperature (400 °C) in both deuterated film and hydrogenated film prepared with heavy dilution. The latter film was shown to have oriented microstructure which was correlated with higher stability. This correlation strongly indicates that microstructure of the material plays a key role in improving the stability.

Amorphous Silicon and Silicon Germanium Alloy Solar Cells Deposited by VHF at High Rates

2001 ◽  
Vol 664 ◽  
Author(s):  
Jeffrey Yang ◽  
Baojie Yan ◽  
Jozef Smeets ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Buffer Layers ◽  
Very High Frequency ◽  
High Quality ◽  
Deposition Rates ◽  
Sige Alloy ◽  
Rf Glow Discharge

ABSTRACTA modified very high frequency (MVHF) glow discharge technique is used to deposit amorphous silicon (a-Si) and amorphous silicon-germanium (a-SiGe) alloy solar cells at high deposition rates. High quality a-Si alloy solar cells have been obtained by using MVHF at deposition rates up to ∼10 Å/s. The cells show good initial and stabilized efficiencies comparable to those obtained from conventional radio-frequency (RF) glow discharge deposition at low rates (∼1 Å/s). However, high quality a-SiGe alloy solar cells are more difficult to achieve at high deposition rates. In this paper, we present the progress made on a-SiGe alloy solar cells by incorporating bandgap profiling and appropriate buffer layers. Using the improved a-SiGe alloy solar cells, a-Si/a-SiGe tandem configurations are made and results presented.

High Deposition Rate Amorphous Silicon Alloy Xerographic Photoreceptor

1985 ◽  
Vol 49 ◽  
Author(s):  
S.J. Hudgens ◽  
A.G. Johncock
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Decay Time ◽  
Plasma Deposition ◽  
Deposition Process ◽  
Utilization Efficiency ◽  
High Deposition Rate ◽  
High Quality ◽  
Silicon Alloy ◽  
Gas Utilization

AbstractA new multilayer amorphous silicon alloy photoreceptor has been deposited at rates exceeding 36 µm/hr. using 2.45 GHz microwave glow discharge. The device whose structure is Al/a-Si:H:F (B-300)/a-Si:H:F (B-10)/a-Si:H:F:C is deposited in a powderless plasma deposition process which exhibits gas utilization efficiency approaching 100%. The xerographic performance of a 28µm device is: Vsat∼1100 V for a +7 KV corona; dark half decay time ≃5 sec; and photosensitivity ∼0.3 µJ/cm2 at λ = 650 nm. Stable, high quality xerographic images are obtained with these photoreceptors.

Wide-Gap a-Si:H Fabricated by Controlling Voids

1996 ◽  
Vol 420 ◽  
Author(s):  
K. Yoshino ◽  
W. Futako ◽  
Y. Wasai ◽  
I. Shimizu
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Band Gaps ◽  
High Quality ◽  
Chemical Annealing ◽  
Improved Stability ◽  
Wide Gap ◽  
Hydrogenated Amorphous ◽  
Defect Densities

AbstractHigh quality wide gap hydrogenated amorphous silicon has been prepared using the chemical annealing technique. It was possible to prepare materials with band gaps ranging 1.8 to 2.1 eV by varying the preparation parameters. Low defect densities less than (3–8) x 1015 cm-3 could be maintained over the entire band gap range. Improved stability for light soaking was also observed in the wide gap materials.

Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon

1999 ◽  
Vol 38 (Part 1, No. 7B) ◽  
pp. 4535-4537 ◽  
Author(s):  
Wataru Futako ◽  
Tomoko Takagi ◽  
Tomonori Nishimoto ◽  
Michio Kondo ◽  
Isamu Shimizu ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Gas Phase ◽  
Discharge Plasma ◽  
High Rate ◽  
Glow Discharge Plasma ◽  
High Quality ◽  
Rf Glow Discharge

Hydrogenated amorphous silicon films obtained by a low pressure dc glow discharge

1988 ◽  
Vol 46 (3) ◽  
pp. 207-213 ◽  
Author(s):  
J. C. Delgado ◽  
J. Andreu ◽  
G. Sardin ◽  
J. Esteve ◽  
J. L. Morenza
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Low Pressure ◽  
Silicon Films ◽  
Dc Glow Discharge ◽  
Hydrogenated Amorphous
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