Radiation Damage Of InGaAs Photodiodes By High Energy Particles

1997 ◽  
Vol 487 ◽  
Author(s):  
T. Kudou ◽  
H. Ohyama ◽  
E. Simoen ◽  
C. Claeys ◽  
Y. Takami ◽  
...  
Keyword(s):  
Energy Loss ◽  
Dark Current ◽  
High Energy ◽  
Fast Neutrons ◽  
Carbon Particles ◽  
Recovery Behavior ◽  
The One ◽  
High Energy Particles ◽  
Calculated Number ◽  
Photo Current

AbstractResults are presented of a study on the performance degradation and the induced lattice defects of In0.53Ga0.47As p-i-n photodiodes, subjected to 220-MeV carbon particles. The effects on both the dark current and the photo-current are investigated as a function of the carbon fluence and correlated with DLTS results. The device degradation is compared with the one observed after exposure to 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays, respectively. The differences in damage coefficients will be explained in view of the calculated number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the diode performance and of the induced deep levels by isochronal annealing is also reported.

Radiation Damage in Si Avalanche Photodiodes by 1-Mev Fast Neutrons and 220-Mev Carbon Particles

1997 ◽  
Vol 487 ◽  
Author(s):  
H. Ohyama ◽  
T. Hakata ◽  
E. Simoen ◽  
C. Claeys ◽  
Y. Takami ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Dark Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Avalanche Photodiodes ◽  
Fast Neutrons ◽  
Device Performance ◽  
Carbon Particles ◽  
Transient Spectroscopy ◽  
Photo Current

AbstractResults are presented of a study on the degradation of the electrical and optical performance of n+p Si avalanche photodiodes, subjected to 1-MeV fast neutrons and to a 220-MeV carbon irradiation. The dark current increases after irradiation, while the photo current decreases. Two dominant hole capture levels, which are responsible for the degradation of performance, are after irradiation observed by DLTS (Deep Level Transient Spectroscopy). The degradation caused by neutron irradiation is smaller than that for carbon irradiation. The differences in the radiation damage are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

FEATURES OF PHOTOCONDUCTIVITY OF Ge AND Si WITH DISORDERED REGIONS

2010 ◽  
Vol 24 (31) ◽  
pp. 2985-2996 ◽  
Author(s):  
V. YEVSEYEV
Keyword(s):  
Large Scale ◽  
High Energy ◽  
Fast Neutrons ◽  
Potential Relief ◽  
Photoelectrical Properties ◽  
Recombination Centers ◽  
First Time ◽  
High Energy Particles ◽  
Disordered Regions

Influence of large radiation defects — disordered regions on photoconductivity of semiconductors Ge and Si , compensated as a result of an irradiation with fast neutrons and 1 GeV protons, is investigated. For the first time, the combined role of disordered regions and a large-scale potential relief in photoelectrical properties of Ge and Si , irradiated by high energy particles is defined. The model of photoconductivity that takes into consideration disordered regions as specific sensitizing recombination centers and allows formation of the spatial potential relief is developed.

Peculiarities of the energy loss spectrum of high energy particles penetrating thin silicon plates

1991 ◽  
Vol 58 (2) ◽  
pp. 157-160 ◽  
Author(s):  
V.S. Barashenkov ◽  
N.G. Goleminov ◽  
L.N. Zaitsev ◽  
A. Polanski ◽  
A.N. Sosnin ◽  
...  
Keyword(s):  
Energy Loss ◽  
High Energy ◽  
Thin Silicon ◽  
High Energy Particles

scholarly journals Probing the Nanostructure of Neutron-Irradiated Diamond Using Raman Spectroscopy

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1166
Author(s):  
Andrey A. Khomich ◽  
Roman A. Khmelnitsky ◽  
Alexander V. Khomich
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Chemical Vapor ◽  
High Energy ◽  
Fast Neutrons ◽  
Phonon Confinement ◽  
Electrical And Optical Properties ◽  
Induced Defects ◽  
High Energy Particles ◽  
Irradiation Induced Defects

Disordering of crystal lattice induced by irradiation with fast neutrons and other high-energy particles is used for the deep modification of electrical and optical properties of diamonds via significant nanoscale restructuring and defects engineering. Raman spectroscopy was employed to investigate the nature of radiation damage below the critical graphitization level created when chemical vapor deposition and natural diamonds are irradiated by fast neutrons with fluencies from 1 × 1018 to 3 × 1020 cm−2 and annealed at the 100–1700 °C range. The significant changes in the diamond Raman spectra versus the neutron-irradiated conditions are associated with the formation of intrinsic irradiation-induced defects that do not completely destroy the crystalline feature but decrease the phonon coherence length as the neutron dose increases. It was shown that the Raman spectrum of radiation-damaged diamonds is determined by the phonon confinement effect and that the boson peak is present in the Raman spectra up to annealing at 800–1000 °C. Three groups of defect-induced bands (first group = 260, 495, and 730 cm−1; second group = 230, 500, 530, 685, and 760 cm–1; and third group = 335, 1390, 1415, and 1740 cm−1) were observed in Raman spectra of fast-neutron-irradiated diamonds.

scholarly journals Grain size effect on the radiation damage tolerance of cubic zirconia against simultaneous low and high energy heavy ions: Nano triumphs bulk

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Parswajit Kalita ◽  
Santanu Ghosh ◽  
Gaëlle Gutierrez ◽  
Parasmani Rajput ◽  
Vinita Grover ◽  
...  
Keyword(s):  
Grain Size ◽  
Energy Loss ◽  
Radiation Damage ◽  
Damage Tolerance ◽  
High Energy ◽  
Electronic Energy ◽  
Nuclear Industry ◽  
Low Energy ◽  
Cubic Zirconia ◽  
High Energy Particles

AbstractIrradiation induced damage in materials is highly detrimental and is a critical issue in several vital science and technology fields, e.g., the nuclear and space industries. While the effect of dimensionality (nano/bulk) of materials on its radiation damage tolerance has been receiving tremendous interest, studies have only concentrated on low energy (nuclear energy loss (Sn) dominant) and high energy (electronic energy loss (Se) dominant) irradiations independently (wherein, interestingly, the effect is opposite). In-fact, research on radiation damage in general has almost entirely focused only on independent irradiations with low and/or high energy particles till date, and investigations under simultaneous impingement of energetic particles (which also correspond to the actual irradiation conditions during real-world applications) are very scarce. The present work elucidates, taking cubic zirconia as a model system, the effect of grain size (26 nm vs 80 nm) on the radiation tolerance against simultaneous irradiation with low energy (900 keV I) and high energy (27 meV Fe) particles/ions; and, in particular, introduces the enhancement in the radiation damage tolerance upon downsizing from bulk to nano dimension. This result is interpreted within the framework of the thermal-spike model after considering (1) the fact that there is essentially no spatial and time overlap between the damage events of the two ‘simultaneous’ irradiations, and (2) the influence of grain size on radiation damage against individual Sn and Se. The present work besides providing the first fundamental insights into how the grain size/grain boundary density inherently mediates the radiation response of a material to simultaneous Sn and Se deposition, also (1) paves the way for potential application of nano-crystalline materials in the nuclear industry (where simultaneous irradiations with low and high energy particles correspond to the actual irradiation conditions), and (2) lays the groundwork for understanding the material behaviour under other simultaneous (viz. Sn and Sn, Se and Se) irradiations.

Radiation Source Dependence of Degradation in Mosfets on SIMOX Substrate

1997 ◽  
Vol 487 ◽  
Author(s):  
T. Hakata ◽  
H. Ohyama ◽  
E. Simoen ◽  
C. Claeys ◽  
Y. Takami ◽  
...  
Keyword(s):  
Energy Loss ◽  
Radiation Source ◽  
Drain Current ◽  
Electrical Performance ◽  
Fast Neutrons ◽  
Device Performance ◽  
Drastic Reduction ◽  
Linear Operation ◽  
Recovery Behavior ◽  
First Time

AbstractResults are presented for the first time of a study on the degradation of the electrical performance of MOSFET's processed on SIMOX substrates and subjected to a 220-MeV carbon irradiation. For the n-MOSFETs an unstable increase of the drain current in linear operation is found, while for the p-MOSFETs, a drastic reduction is observed, both in linear operation and in saturation. The radiation damage is also compared to the results for 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays. The differences in the damage coefficients are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

P20 phosphor on polyimide as a large area high-resolution transmission screen for slow scan CCD systems

1995 ◽  
Vol 53 ◽  
pp. 20-21
Author(s):  
C. C. Ahn ◽  
S. Karnes ◽  
M. Lvovsky ◽  
C. M. Garland ◽  
H. A. Atwater ◽  
...  
Keyword(s):  
Mechanical Stability ◽  
High Energy ◽  
Practical Implementation ◽  
Line Pair ◽  
Modulation Transfer ◽  
Large Area ◽  
Ccd Imaging ◽  
Transmission Electron ◽  
The One ◽  
Beam Broadening

The bane of CCD imaging systems for transmission electron microscopy at intermediate and high voltages has been their relatively poor modulation transfer function (MTF), or line pair resolution. The problem originates primarily with the phosphor screen. On the one hand, screens should be thick so that as many incident electrons as possible are converted to photons, yielding a high detective quantum efficiency(DQE). The MTF diminishes as a function of scintillator thickness however, and to some extent as a function of fluorescence within the scintillator substrates. Fan has noted that the use of a thin layer of phosphor beneath a self supporting 2μ, thick Al substrate might provide the most appropriate compromise for high DQE and MTF in transmission electron microcscopes which operate at higher voltages. Monte Carlo simulations of high energy electron trajectories reveal that only little beam broadening occurs within this thickness of Al film. Consequently, the MTF is limited predominantly by broadening within the thin phosphor underlayer. There are difficulties however, in the practical implementation of this design, associated mostly with the mechanical stability of the Al support film.

Monte Carlo Modelling of Secondary Electron Yield from Rough Surfaces

1990 ◽  
Vol 48 (1) ◽  
pp. 422-423
Author(s):  
John C. Russ
Keyword(s):  
Monte Carlo ◽  
Energy Loss ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Analytical Calculation ◽  
Mean Free Path ◽  
Single Scattering ◽  
High Energy ◽  
Secondary Electron Yield ◽  
Electron Yield

Monte-Carlo programs are well recognized for their ability to model electron beam interactions with samples, and to incorporate boundary conditions such as compositional or surface variations which are difficult to handle analytically. This success has been especially powerful for modelling X-ray emission and the backscattering of high energy electrons. Secondary electron emission has proven to be somewhat more difficult, since the diffusion of the generated secondaries to the surface is strongly geometry dependent, and requires analytical calculations as well as material parameters. Modelling of secondary electron yield within a Monte-Carlo framework has been done using multiple scattering programs, but is not readily adapted to the moderately complex geometries associated with samples such as microelectronic devices, etc.This paper reports results using a different approach in which simplifying assumptions are made to permit direct and easy estimation of the secondary electron signal from samples of arbitrary complexity. The single-scattering program which performs the basic Monte-Carlo simulation (and is also used for backscattered electron and EBIC simulation) allows multiple regions to be defined within the sample, each with boundaries formed by a polygon of any number of sides. Each region may be given any elemental composition in atomic percent. In addition to the regions comprising the primary structure of the sample, a series of thin regions are defined along the surface(s) in which the total energy loss of the primary electrons is summed. This energy loss is assumed to be proportional to the generated secondary electron signal which would be emitted from the sample. The only adjustable variable is the thickness of the region, which plays the same role as the mean free path of the secondary electrons in an analytical calculation. This is treated as an empirical factor, similar in many respects to the λ and ε parameters in the Joy model.

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