Radiation Source Dependence of Degradation in Mosfets on SIMOX Substrate

1997 ◽  
Vol 487 ◽  
Author(s):  
T. Hakata ◽  
H. Ohyama ◽  
E. Simoen ◽  
C. Claeys ◽  
Y. Takami ◽  
...  
Keyword(s):  
Energy Loss ◽  
Radiation Source ◽  
Drain Current ◽  
Electrical Performance ◽  
Fast Neutrons ◽  
Device Performance ◽  
Drastic Reduction ◽  
Linear Operation ◽  
Recovery Behavior ◽  
First Time

AbstractResults are presented for the first time of a study on the degradation of the electrical performance of MOSFET's processed on SIMOX substrates and subjected to a 220-MeV carbon irradiation. For the n-MOSFETs an unstable increase of the drain current in linear operation is found, while for the p-MOSFETs, a drastic reduction is observed, both in linear operation and in saturation. The radiation damage is also compared to the results for 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays. The differences in the damage coefficients are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

Radiation Damage Of InGaAs Photodiodes By High Energy Particles

1997 ◽  
Vol 487 ◽  
Author(s):  
T. Kudou ◽  
H. Ohyama ◽  
E. Simoen ◽  
C. Claeys ◽  
Y. Takami ◽  
...  
Keyword(s):  
Energy Loss ◽  
Dark Current ◽  
High Energy ◽  
Fast Neutrons ◽  
Carbon Particles ◽  
Recovery Behavior ◽  
The One ◽  
High Energy Particles ◽  
Calculated Number ◽  
Photo Current

AbstractResults are presented of a study on the performance degradation and the induced lattice defects of In0.53Ga0.47As p-i-n photodiodes, subjected to 220-MeV carbon particles. The effects on both the dark current and the photo-current are investigated as a function of the carbon fluence and correlated with DLTS results. The device degradation is compared with the one observed after exposure to 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays, respectively. The differences in damage coefficients will be explained in view of the calculated number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the diode performance and of the induced deep levels by isochronal annealing is also reported.

Degradation and Recovery of Si1−xGex Devices by Irradiation

1995 ◽  
Vol 379 ◽  
Author(s):  
H. Ohyama ◽  
J. Vanhellemont ◽  
Y. Takami ◽  
K. Hayama ◽  
T. Kudo ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Heterojunction Bipolar Transistors ◽  
Radiation Source ◽  
Bipolar Transistors ◽  
Isochronal Annealing ◽  
Device Performance ◽  
Absorbed Energy ◽  
Strained Si ◽  
Germanium Content ◽  
Recovery Behavior

ABSTRACTResults are presented of a study on the degradation and recovery behavior of strained Si 1−xGex diodes and heterojunction bipolar transistors (HBTs) by electron and neutron irradiation. The degradation of device performance and the generation of lattice defects are reported as a function of germanium content and radiation source. Isochronal annealing is performed to study the recovery behavior of the irradiated devices. The radiation source dependence of the degradation is discussed taking into account the absorbed energy dunng irradiation.

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

scholarly journals Direct detection of atomic dark matter in white dwarfs

2021 ◽  
Vol 2021 (3) ◽  
Author(s):  
David Curtin ◽  
Jack Setford
Keyword(s):  
Dark Matter ◽  
Energy Loss ◽  
Cooling Rate ◽  
White Dwarf ◽  
White Dwarfs ◽  
Luminosity Function ◽  
Direct Detection ◽  
Matter Density ◽  
Mixing Parameter ◽  
First Time

Abstract Dark matter could have a dissipative asymmetric subcomponent in the form of atomic dark matter (aDM). This arises in many scenarios of dark complexity, and is a prediction of neutral naturalness, such as the Mirror Twin Higgs model. We show for the first time how White Dwarf cooling provides strong bounds on aDM. In the presence of a small kinetic mixing between the dark and SM photon, stars are expected to accumulate atomic dark matter in their cores, which then radiates away energy in the form of dark photons. In the case of white dwarfs, this energy loss can have a detectable impact on their cooling rate. We use measurements of the white dwarf luminosity function to tightly constrain the kinetic mixing parameter between the dark and visible photons, for DM masses in the range 10−5–105 GeV, down to values of ϵ ∼ 10−12. Using this method we can constrain scenarios in which aDM constitutes fractions as small as 10−3 of the total dark matter density. Our methods are highly complementary to other methods of probing aDM, especially in scenarios where the aDM is arranged in a dark disk, which can make direct detection extremely difficult but actually slightly enhances our cooling constraints.

scholarly journals Experimental Investigation of a Novel Absorptive/Reflective Solar Concentrator: A Thermal Analysis

Energies ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1281 ◽  
Author(s):  
Alok Dayanand ◽  
Muhsin Aykapadathu ◽  
Nazmi Sellami ◽  
Mehdi Nazarinia
Keyword(s):  
Experimental Investigation ◽  
Cooling System ◽  
Electrical Performance ◽  
Solar Concentrator ◽  
Cell Temperature ◽  
Compound Parabolic Concentrator ◽  
Pv Cell ◽  
Overall Efficiency ◽  
First Time ◽  
Absorber Surface

This paper presents the experimental investigation of a novel cross-compound parabolic concentrator (CCPC). For the first time, a CCPC module was designed to simultaneously work as an electricity generator and collect the thermal energy present in the module which is generated due to the incident irradiation. This CCPC module consists of two regions: an absorber surface atop the rig and a reflective region below that to reflect the irradiation onto the photovoltaic (PV) cell, coupled together to form an absorptive/reflective CCPC (AR-CCPC) module. A major issue in the use of PV cells is the decrease in electrical conversion efficiency with the increase in cell temperature. This module employs an active cooling system to decrease the PV cell temperature, optimizing the electrical performance and absorbing the heat generated within the module. This system was found to have an overall efficiency of 63%, which comprises the summation of the electrical and thermal efficiency posed by the AR-CCPC module.

scholarly journals Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 654
Author(s):  
Shouyi Wang ◽  
Qi Zhou ◽  
Kuangli Chen ◽  
Pengxiang Bai ◽  
Jinghai Wang ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Drain Current ◽  
Device Performance ◽  
Depletion Effect ◽  
Threshold Voltages ◽  
Gate Structure ◽  
Drain Side ◽  
Effective Reduction ◽  
Field Peak ◽  
Thin Barrier

In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (VTH) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effect assisted by the p-GaN gate part, the VTH of HG-UTB HEMTs can be significantly increased. By tailoring the hole concentration of the p-GaN gate, the VTH can be flexibly modulated from 1.63 V to 3.84 V. Moreover, the MIS-gate part enables the effective reduction in the electric field (E-field) peak at the drain-side edge of the p-GaN gate, which reduces the potential gate degradation originating from the high E-field in the p-GaN gate. Meanwhile, the HG-UTB HEMTs exhibit a maximum drain current as high as 701 mA/mm and correspond to an on-resistance of 10.1 Ω mm and a breakdown voltage of 610 V. The proposed HG-UTB HEMTs are a potential means to achieve normally off GaN HEMTs with a promising device performance and featuring a flexible VTH modulation range, which is of great interest for versatile power applications.

Le spectre des états électroniques de Kr I mesuré par spectrométrie électronique

1975 ◽  
Vol 53 (19) ◽  
pp. 2079-2084 ◽  
Author(s):  
A. Delage ◽  
J.-D. Carette
Keyword(s):  
Experimental Data ◽  
Energy Loss ◽  
Inelastic Scattering ◽  
Electronic States ◽  
Resolving Power ◽  
Electron Spectrometer ◽  
Energy Incident ◽  
First Time ◽  
Electron Energy Loss ◽  
Electron Energy Loss Spectra

The spectrum of electronic states of krypton I has been measured by inelastic scattering of monoenergetic electrons with the aid of an electron spectrometer which has a high resolving power, ΔE/E = 0.02. Electron energy loss spectra have allowed us to detect and identify numerous electronic states of krypton I for the first time by the means of this experimental method. The relative heights of the peaks corresponding to an energy loss, which are related to the probability of excitation of the atom by electron impact to a given state, have been measured from experimental data as a function of the energy incident electrons and as a function of the scattering angle.

scholarly journals Physical advantages of particles: protons and light ions

2020 ◽  
Vol 93 (1107) ◽  
pp. 20190428 ◽  
Author(s):  
Oliver Jäkel
Keyword(s):  
Energy Loss ◽  
Biological Effects ◽  
Ion Beam ◽  
National Laboratory ◽  
Carbon Ions ◽  
Nuclear Fragmentation ◽  
Depth Dose ◽  
Light Ions ◽  
Argon Ions ◽  
First Time

Proton and ion beam therapy has been introduced in the Lawrence Berkeley National Laboratory in the mid-1950s, when protons and helium ions have been used for the first time to treat patients. Starting in 1972, the scientists at Berkeley also were the first to use heavier ions (carbon, oxygen, neon, silicon and argon ions). The first clinical ion beam facility opened in 1994 in Japan and since then, the interest in radiotherapy with light ion beams has been increasing slowly but steadily, with 13 centers in clinical operation in 2019. All these centers are using carbon ions for clinical application. The article outlines the differences in physical properties of various light ions as compared to protons in view of the application in radiotherapy. These include the energy loss and depth dose properties, multiple scattering, range straggling and nuclear fragmentation. In addition, the paper discusses differences arising from energy loss and linear energy transfer with respect to their biological effects. Moreover, the paper reviews briefly the existing clinical data comparing protons and ions and outlines the future perspectives for the clinical use of ions like oxygen and helium.

Integral measurement of spectrum-averaged cross sections of a few threshold reactions induced by fast neutrons of a TRIGA reactor: comparison with integrated data from excitation functions given in various data libraries

2020 ◽  
Vol 108 (7) ◽  
pp. 511-516
Author(s):  
Md. Shuza Uddin ◽  
K. A. Rafee ◽  
S. M. Hossain ◽  
R. Khan ◽  
S. M. Qaim
Keyword(s):  
Excitation Function ◽  
Cross Sections ◽  
Fast Neutrons ◽  
Integral Test ◽  
Triga Reactor ◽  
Fission Spectrum ◽  
Data Libraries ◽  
First Time ◽  
Prompt Fission ◽  
Fast Neutron Spectrum

AbstractIntegral cross sections of the reactions 24Mg(n,p)24Na, 27Al(n,p)27Mg, 27Al(n,α)24Na, 58Ni(n,d + np)57Co and 60Ni(n,p)60Co were measured for the first time using the fast neutron spectrum of a TRIGA reactor extending from 0.5 to 20 MeV. The values obtained in this work were comparable with the recommended values for a pure 235U prompt fission spectrum. The measured integral value was utilized for integral test of excitation function of each reaction given in some data libraries, namely ENDF/B-VIII.0, TENDL-2017, IRDFF-1.05 and ROSFOND-2010. The integral measurements are generally consistent with the integrated values within 5 %, except for a few cases, e. g. the reaction 60Ni(n,p)60Co, where the data libraries appear to need improvement.

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