Modeling of the Signal Induced by an Incident Radiation in Semi-Insulating GaAs Detectors

1997 ◽  
Vol 487 ◽  
Author(s):  
Adriano Cola ◽  
Lorenzo Vasanelli ◽  
Lino Reggiani
Keyword(s):  
Monte Carlo ◽  
Physical Interpretation ◽  
Applied Voltage ◽  
Slow Component ◽  
Incident Radiation ◽  
External Radiation ◽  
Slow Time ◽  
Relative Contribution ◽  
Charge Signal ◽  
Monte Carlo Simulator

AbstractWe develop a Monte Carlo simulator of the charge signal induced by an external radiation on a semi-insulating GaAs detector. The role played by trapping and detrapping processes and the dynamics of generated carriers are investigated. The relative contribution to the charge signal of fast and slow time components as well as the time constant of the slow component are studied as a function of the applied voltage. Present findings provide a physical interpretation of available experimental results.

Comparison of Experiment With Monte Carlo Simulations on a Reflective Gap Using a Detailed Surface Properties Model

1996 ◽  
Vol 118 (2) ◽  
pp. 388-393 ◽  
Author(s):  
J. Zaworski ◽  
J. R. Welty ◽  
B. J. Palmer ◽  
M. K. Drost
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Grazing Angle ◽  
Incident Radiation ◽  
Monte Carlo Code ◽  
Bidirectional Reflectance Distribution Function ◽  
Bidirectional Reflectance ◽  
Detailed Surface ◽  
Bidirectional Reflectance Distribution

The spatial distribution of light through a rectangular gap bounded by highly reflective, diffuse surfaces was measured and compared with the results of Monte Carlo simulations. Incorporating radiant properties for real surfaces into a Monte Carlo code was seen to be a significant problem; a number of techniques for accomplishing this are discussed. Independent results are reported for measured values of the bidirectional reflectance distribution function over incident polar angles from 0 to 90 deg for a semidiffuse surface treatment (Krylon™ flat white spray paint). The inclusion of this information into a Monte Carlo simulation yielded various levels of agreement with experimental results. The poorest agreement occurred when the incident radiation was at a grazing angle with respect to the surface and the reflectance was nearly specular.

Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap

2020 ◽  
pp. 438-445 ◽  
Author(s):  
Carlos Sampedro ◽  
Cristina Medina-Bailon ◽  
Luca Donetti ◽  
Jose Luis Padilla ◽  
Carlos Navarro ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Ensemble Monte Carlo ◽  
Monte Carlo Simulator

scholarly journals MMonCa: An Object Kinetic Monte Carlo simulator for damage irradiation evolution and defect diffusion

2013 ◽  
Vol 184 (12) ◽  
pp. 2703-2710 ◽  
Author(s):  
Ignacio Martin-Bragado ◽  
Antonio Rivera ◽  
Gonzalo Valles ◽  
Jose Luis Gomez-Selles ◽  
María J. Caturla
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Defect Diffusion ◽  
Object Kinetic Monte Carlo ◽  
Monte Carlo Simulator

An efficient Monte Carlo simulator for low-pressure RF plasmas

1997 ◽  
Vol 25 (5) ◽  
pp. 1081-1085 ◽  
Author(s):  
M. Ardehali ◽  
H. Matsumoto
Keyword(s):  
Monte Carlo ◽  
Low Pressure ◽  
Rf Plasmas ◽  
Monte Carlo Simulator

Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas

2005 ◽  
Vol 49 (9) ◽  
pp. 1529-1535 ◽  
Author(s):  
Luca Lucci ◽  
Pierpaolo Palestri ◽  
David Esseni ◽  
Luca Selmi
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Electron Gas ◽  
2D Electron Gas ◽  
Monte Carlo Simulator
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