An efficient Monte Carlo simulator for low-pressure RF plasmas

1997 ◽  
Vol 25 (5) ◽  
pp. 1081-1085 ◽  
Author(s):  
M. Ardehali ◽  
H. Matsumoto
Keyword(s):  
Monte Carlo ◽  
Low Pressure ◽  
Rf Plasmas ◽  
Monte Carlo Simulator

Study on the Deposition Profile Characteristics in the Micron-Scale Trench Using Direct Simulation Monte Carlo Method

1998 ◽  
Vol 120 (2) ◽  
pp. 296-302 ◽  
Author(s):  
Masato Ikegawa ◽  
Jun’ichi Kobayashi ◽  
Morihisa Maruko
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Boundary Conditions ◽  
Gas Flow ◽  
Direct Simulation Monte Carlo ◽  
Low Pressure ◽  
Sputter Deposition ◽  
Direct Simulation ◽  
Simulation Monte Carlo ◽  
Profile Characteristics

As integrated circuits are advancing toward smaller device features, step-coverage in submicron trenches and holes in thin film deposition are becoming of concern. Deposition consists of gas flow in the vapor phase and film growth in the solid phase. A deposition profile simulator using the direct simulation Monte Carlo method has been developed to investigate deposition profile characteristics on small trenches which have nearly the same dimension as the mean free path of molecules. This simulator can be applied to several deposition processes such as sputter deposition, and atmospheric- or low-pressure chemical vapor deposition. In the case of low-pressure processes such as sputter deposition, upstream boundary conditions of the trenches can be calculated by means of rarefied gas flow analysis in the reactor. The effects of upstream boundary conditions, molecular collisions, sticking coefficients, and surface migration on deposition profiles in the trenches were clarified.

Computations of Low Pressure Fluid Flow and Heat Transfer in Ducts Using Direct Simulation Monte Carlo Method

1999 ◽  
Author(s):  
Fang Yan ◽  
Bakhtier Farouk
Keyword(s):  
Heat Transfer ◽  
Monte Carlo ◽  
Noble Gas ◽  
Direct Simulation Monte Carlo ◽  
Low Pressure ◽  
Direct Simulation ◽  
Flow And Heat Transfer ◽  
Gas Transport Properties ◽  
Pressure Profiles ◽  
Simulation Monte Carlo

Abstract High Knudsen (Kn) number flows are found in vacuum and micro-scale systems. Such flows are characterized by non-continuum behavior. For gases, the flows are usually in the slip or transition regimes. In this paper, the direct simulation Monte Carlo (DSMC) method has been applied to compute low pressure, high Kn flow fields in partially heated channels. Computations were carried out for nitrogen, argon, hydrogen, oxygen and noble gas mixtures. Variation of the Kn is obtained by reducing the pressure while keeping the channel width constant. Nonlinear pressure profiles along the channel centerline are observed. Heat transfer from the channel walls is also calculated and compared with the Graetz solution. The effects of varying pressure, inlet flow and gas transport properties (Kn, Reynolds number, Re and the Prandtl number, Pr respectively) on the wall heat transfer (Nu) were examined. A simplified correlation for predicting Nu¯ as a function of Pe¯ and Kn¯ is presented.

Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap

2020 ◽  
pp. 438-445 ◽  
Author(s):  
Carlos Sampedro ◽  
Cristina Medina-Bailon ◽  
Luca Donetti ◽  
Jose Luis Padilla ◽  
Carlos Navarro ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Ensemble Monte Carlo ◽  
Monte Carlo Simulator

scholarly journals MMonCa: An Object Kinetic Monte Carlo simulator for damage irradiation evolution and defect diffusion

2013 ◽  
Vol 184 (12) ◽  
pp. 2703-2710 ◽  
Author(s):  
Ignacio Martin-Bragado ◽  
Antonio Rivera ◽  
Gonzalo Valles ◽  
Jose Luis Gomez-Selles ◽  
María J. Caturla
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Defect Diffusion ◽  
Object Kinetic Monte Carlo ◽  
Monte Carlo Simulator

Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas

2005 ◽  
Vol 49 (9) ◽  
pp. 1529-1535 ◽  
Author(s):  
Luca Lucci ◽  
Pierpaolo Palestri ◽  
David Esseni ◽  
Luca Selmi
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Electron Gas ◽  
2D Electron Gas ◽  
Monte Carlo Simulator

Characterization and global modelling of low-pressure hydrogen-based RF plasmas suitable for surface cleaning processes

2013 ◽  
Vol 46 (47) ◽  
pp. 475206 ◽  
Author(s):  
Nikola Škoro ◽  
Nevena Puač ◽  
Saša Lazović ◽  
Uroš Cvelbar ◽  
George Kokkoris ◽  
...  
Keyword(s):  
Low Pressure ◽  
Surface Cleaning ◽  
Rf Plasmas ◽  
Global Modelling ◽  
Pressure Hydrogen
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