Room Temperature Growth of Conducting ZnO Films
Keyword(s):
Zn Ions
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AbstractSingle and dual-laser ablation techniques have been used to grow conductive ZnO films at room temperature by ablating a Zn metal target in oxygen ambient. The emission spectroscopy of the material plumes shows a significant presence of oxygen ions and Zn ions in the dual-laser ablated plume. Furthermore, dual-laser ablated plumes expanded rapidly in the radial direction resulting in large-area uniform films. The electrical properties of the films deposited on glass substrates depend critically on the ambient oxygen pressure. Conductivities of the order of 103 (ω.cm)-1 have been obtained for films deposited at room temperature by the dual-laser ablation process.
2003 ◽
Vol 36
(13)
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pp. 1605-1608
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Keyword(s):
2007 ◽
Vol 253
(19)
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pp. 7651-7655
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2010 ◽
Vol 257
(4)
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pp. 1310-1313
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Keyword(s):
1995 ◽
Vol 09
(28)
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pp. 3625-3666
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Keyword(s):
2000 ◽
Vol 36
(5)
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pp. 2927-2929
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Keyword(s):
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