Room‐temperature growth of AlN thin films by laser ablation

1992 ◽  
Vol 60 (18) ◽  
pp. 2234-2236 ◽  
Author(s):  
Kanekazu Seki ◽  
Xiangqun Xu ◽  
Hideo Okabe ◽  
Joan M. Frye ◽  
Joshua B. Halpern
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
Temperature Growth

Room-temperature growth of ZrO2 thin films using a novel hyperthermal oxygen-atom source

1999 ◽  
Vol 17 (1) ◽  
pp. 14-18 ◽  
Author(s):  
Elmar Wisotzki ◽  
Adam G. Balogh ◽  
Horst Hahn ◽  
John T. Wolan ◽  
Gar B. Hoflund
Keyword(s):  
Thin Films ◽  
Oxygen Atom ◽  
Room Temperature ◽  
Temperature Growth ◽  
Atom Source

scholarly journals Low-temperature growth of YBCO thin films by pulsed laser ablation in reducing environment

1998 ◽  
Vol 127-129 ◽  
pp. 963-967
Author(s):  
Akiharu Morimoto ◽  
Katsuhito Takezawa ◽  
Toshiharu Minamikawa ◽  
Yasuto Yonezawa ◽  
Tatsuo Shimizu
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Low Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Ybco Thin Films ◽  
Reducing Environment

Early stages of the growth of BaTiO3 thin films studied by Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 706-707
Author(s):  
M. Grant Norton ◽  
Gerald R. English ◽  
Christopher Scarfone ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Target Material ◽  
Pulsed Laser Ablation ◽  
Cubic Phase ◽  
Transmission Electron ◽  
Tetragonal Form

Barium titanate (BaTiO3) may be used in a number of thin-film applications in electronic and optoelectronic devices. For these devices the formation of epitactic films of the correct stoichiometry and phase is essential. In particular, the tetragonal form of BaTiO3, which is stable at room temperature, exhibits ferro-, pyro- and piezoelectric properties. It is desirable to form films of the tetragonal phase directly and thus to avoid formation of either amorphous or polycrystalline material or to form material of the non-ferroelectric cubic phase. Recently two techniques, pulsed-laser ablation and reactive evaporation, have been used to form BaTiO3 thin-films. In the present study BaTiO3 thin-films have been formed using the pulsed-laser ablation technique. Pulsed-laser ablation is now widely used to produce thin-films of the high temperature superconductors and has many advantages over other techniques, in particular the formation of films which maintain the stoichiometry of the target material and by controlling the processing conditions the formation of films having defined crystalline phases.

Growth of Au on A Ge (111) Surface

1991 ◽  
Vol 237 ◽  
Author(s):  
D. N. Dunn ◽  
P. Xu ◽  
L. D. Marks
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
High Temperatures ◽  
Room Temperature ◽  
Annealing Behavior ◽  
Temperature Growth ◽  
Au Thin Films

ABSTRACTWe investigate the room temperature growth of evaporated Au thin films on both clean and dirty single crystal Ge (111) substrates. The annealing behavior of these films was then examined under low and high temperatures.

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