Heat Spreader Characteristics Of Multilayer Diamond Films For High Frequency Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
B. Ramaswami ◽  
K. Jagannadham
Keyword(s):  
Diamond Films ◽  
Single Layer ◽  
Power Devices ◽  
Heat Spreader ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Heat Spreaders ◽  
Composite Heat ◽  
Frequency Power

AbstractSingle layer diamond and multilayer diamond films consisting of diamond and aluminum nitride are deposited on molybdenum and silicon nitride substrates. Silicon or GaAs device wafers and the diamond substrates are prepared by metallization and bonded using gold-tin eutectic solder. Results of characterization of the bond by thermal cycling, scanning electron microscopy of the cross-section samples and X-ray mapping of the distribution of different elements are presented. Advantages of use of multilayer diamond composite heat spreaders in power semiconductor devices are discussed.

Multilayer Composite Diamond Heat Spreaders for Electronic Packaging

1996 ◽  
Vol 445 ◽  
Author(s):  
K. Jagannadham ◽  
W. D. Fan ◽  
R. B. Dinwidde ◽  
J. Narayan
Keyword(s):  
Electronic Device ◽  
Single Layer ◽  
Heat Spreader ◽  
Microscopy Imaging ◽  
Diamond Composite ◽  
Heat Spreaders ◽  
Composite Diamond ◽  
Composite Substrates ◽  
Composite Heat ◽  
Heat Spreading

AbstractHeat spreader characteristics of single layer and multilayer diamond composite substrates are determined by bonding to electronic device wafers. Preparation of diamond substrates, metallization and bonding procedures to device wafers are described. Infrared microscopy imaging of the bonded device wafers is used to determine the heat spreading characteristics. Advantages associated with multilayer diamond composite heat spreaders are discussed.

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 10 (4) ◽  
pp. 138-143 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200°C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, ROHM, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200°C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

scholarly journals TEMPERATURE CONTROL OF POWER SEMICONDUCTOR DEVICES OF TRACTION CONVERTER

2017 ◽  
Vol 2017 (1) ◽  
pp. 200-206
Author(s):  
Александр Пугачев ◽  
Aleksandr Pugachev ◽  
Владимир Воробьев ◽  
Vladimir Vorobev ◽  
Николай Стрекалов ◽  
...  
Keyword(s):  
Temperature Control ◽  
Dynamic Properties ◽  
Asynchronous Motor ◽  
Comparative Assessment ◽  
Thermal Processes ◽  
Power Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Cooling Fan ◽  
Semiconductor Converter

The functional and structural circuits of an au-tomatic system for temperature control of power devices of a traction semiconductor converter of frequency are developed. The peculiarities of power devices as an object of temperature control are considered, an equivalent circuit of thermal processes substitution in semiconductor keys is offered, a comparative assessment of capacity of power loss in two- and three-level inverters of voltage is carried out. The dynamic properties of an electro-drive of a cooling fan with an asynchronous motor with a system of scalar control are analyzed. The recommendations on choice and computation of temperature control are developed.

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000082-000087 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200 °C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, Rohm, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200 °C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

Electro-Thermal Design of Smart Power Devices and Integrated Circuits

2014 ◽  
Vol 918 ◽  
pp. 191-194 ◽  
Author(s):  
Konstantin O. Petrosyants ◽  
Igor A. Kharitonov ◽  
Nikita I. Ryabov
Keyword(s):  
Integrated Circuits ◽  
High Power ◽  
Temperature Sensors ◽  
Thermal Design ◽  
Analysis Tool ◽  
Power Devices ◽  
Smart Power ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Combined Use

An efficient methodology of electro-thermal design of smart power semiconductor devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for 2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and high power elements, temperature sensors, IC chips simulation are considered.

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