Single-Crystalline BiVO4 Microtubes with Square Cross-Sections:  Microstructure, Growth Mechanism, and Photocatalytic Property

2007 ◽  
Vol 111 (37) ◽  
pp. 13659-13664 ◽  
Author(s):  
Lin Zhou ◽  
Wenzhong Wang ◽  
Lisha Zhang ◽  
Haolan Xu ◽  
Wei Zhu
Keyword(s):  
Growth Mechanism ◽  
Cross Sections ◽  
Photocatalytic Property ◽  
Single Crystalline

Growth of Single-Crystalline Cubic GaN Nanotubes with Rectangular Cross-Sections

2004 ◽  
Vol 16 (16) ◽  
pp. 1465-1468 ◽  
Author(s):  
J. Q. Hu ◽  
Y. Bando ◽  
J. H. Zhan ◽  
F. F. Xu ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
Cross Sections ◽  
Single Crystalline ◽  
Cubic Gan

scholarly journals Correction to: Growth mechanism identification of sputtered single crystalline bismuth nanowire

2019 ◽  
Vol 9 (8) ◽  
pp. 2103-2103
Author(s):  
Haiyang Hong ◽  
Lu Zhang ◽  
Chunyu Yu ◽  
Ziqi Zhang ◽  
Cheng Li ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Single Crystalline ◽  
Bismuth Nanowire

Large-Scale Synthesis of In2O3 Nanowires and Their Characterization

2005 ◽  
Vol 475-479 ◽  
pp. 3513-3516 ◽  
Author(s):  
Fan Hao Zeng ◽  
X. Zhang
Keyword(s):  
Growth Mechanism ◽  
Large Scale ◽  
Single Crystalline ◽  
Pure Indium ◽  
Sem And Tem ◽  
Large Scale Synthesis

Large-scale single-crystalline In2O3 nanowires were successfully synthesized by simply evaporating the pure indium at 950ı. The as-synthesized products, characterized by XRD, SEM, and TEM, were pure, structurally uniform, and single crystalline with typical diameters of 10 to 100 nanometers and lengths of up to a few hundreds of micrometers. The growth mechanism of the nanowires also was discussed.

scholarly journals Synthesis of Single Crystalline Tellurium Nanotubes with Triangular and Hexagonal Cross Sections

2006 ◽  
Vol 110 (2) ◽  
pp. 791-795 ◽  
Author(s):  
Paritosh Mohanty ◽  
Taejoon Kang ◽  
Bongsoo Kim ◽  
Jeunghee Park
Keyword(s):  
Cross Sections ◽  
Single Crystalline

Growth Mechanism and Structure of Ain Films Grown on Sapphire by MOCVD

1997 ◽  
Vol 482 ◽  
Author(s):  
Yun-Xin Li ◽  
L. Salamanca-Riba ◽  
K. Wongchotigul ◽  
P. Zhou ◽  
M. G. Spencer ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Columnar Structure ◽  
Crystalline Quality ◽  
Lateral Growth ◽  
Oriented Growth ◽  
Columnar Growth ◽  
Nucleation Layer ◽  
Single Crystalline ◽  
Maximum Value ◽  
Layer 2

AbstractAIN films grown on sapphire by MOCVD with different V/IAR ratios were investigated by XRD, TEM and AFM. The AIN films show single crystalline character as well as columnar structure. The growth of AIN has three zones: (1) high-density nucleation layer (2) fine columnar growth and (3) grain merging and lateral growth. The films grown at intermediate V/III ratio have the maximum value of [0002] FWHM. When the V/HI ratio increases, the thickness of the nucleation zone and the film misorientation increase, but when the ratio is increased further, the nucleation zone decreases and the AIN film has a more highly oriented growth. These results suggest that the AIN films with optimum crystalline quality can be obtained by varying the V/III ratio during growth.

Growth of Single-Crystalline Cubic GaN Nanotubes with Rectangular Cross-Sections.

ChemInform ◽  
2004 ◽  
Vol 35 (45) ◽  
Author(s):  
Junqing Hu ◽  
Yoshio Bando ◽  
Jinhua Zhan ◽  
Fangfang Xu ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Cross Sections ◽  
Single Crystalline ◽  
Cubic Gan
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