Ni/Si-Based Ohmic Contacts to p- and n-Type GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
E. Kamińska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
M. Guziewicz ◽  
S. Kasjaniuk ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Contact Region ◽  
Structural Transformations ◽  
Initial Reaction ◽  
Ohmic Behavior ◽  
Region I ◽  
Solid Phase Regrowth

AbstractNi/Si-based ohmic contact scheme for GaN, based on the solid-phase regrowth (SPR) mechanism have been developed. Using Mg and Si as dopant species, ohmic contacts with a resistivity of ∼1*10-3Ωcm2 to p-GaN (p≈3*1017 cm-3) and n-GaN (n≈2*1017cm-3), respectively, have been obtained. SIMS, XRD, and RBS analysis show in as-deposited contacts, an initial reaction at GaN/Ni interface, leading to the formation of an Ni-Ga-N layer. The ohmic behavior of contacts, observed after annealing at 400°C, is accompanied by structural transformations in the contact region: i) the decomposition of Ni-Ga-N layer and ii) the growth of NiSi compound.

The Development of Solid Phase Regrowth on GaAs and its applications

1993 ◽  
Vol 319 ◽  
Author(s):  
L. C. Wang
Keyword(s):  
Ohmic Contacts ◽  
Solid Phase ◽  
Low Loss ◽  
Ohmic Behavior ◽  
Gaas Substrates ◽  
Layer Structures ◽  
Solid Phase Reactions ◽  
Solid Phase Regrowth ◽  
P Type ◽  
Ohmic Contact Formation

AbstractA solid phase regrowth process on GaAs has been observed in Pd- and Ni- based bi-layer structures, e.g. the Si/Ni, the Ge/Pd, the In/Pd, and the Sb/Pd structures. Due to the regrowth, uniform epitaxial layers of Ge, GaAs, InxGa1-xAs, and GaSbl-xAsx on GaAs substrates by solid phase reactions can achieved. The model of this regrowth process will be presented. Based on this regrowth mechanism, a series of non-spiking planar ohmic contacts on n and p type GaAs have been developed. Low contact resistivity in the range of mid 10−7 Ω-cm2 was obtained. The ohmic contact formation mechanism of these contacts will also be discussed. All the studies suggest that the ohmic behavior is a result of the formation of an n+ or p+ surface layer via solid phase reactions. The regrowth process has also been utilized to achieve compositional disordering of GaAs/AlGaAs superlattices, and low loss AlGaAs/GaAs waveguide has been obtained.

Ge/Pd (Zn) Ohmic contact scheme on p‐InP based on the solid phase regrowth principle

1995 ◽  
Vol 66 (24) ◽  
pp. 3310-3312 ◽  
Author(s):  
L. C. Wang ◽  
Moon‐Ho Park ◽  
Fei Deng ◽  
A. Clawson ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Solid Phase Regrowth

The Si/Pd ohmic contact to n-GaP based on the solid phase regrowth principle

1997 ◽  
Vol 81 (7) ◽  
pp. 3138-3142 ◽  
Author(s):  
Moon-Ho Park ◽  
L. C. Wang ◽  
D. C. Dufner ◽  
Fei Deng ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Solid Phase Regrowth

Solid-Phase Ohmic Contacts to GaAs with TiN Diffusion Barriers

1984 ◽  
Vol 37 ◽  
Author(s):  
H. P. Kattelus ◽  
J. L. Tandon ◽  
A. H. Hamdi ◽  
M-A. Nicolet
Keyword(s):  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Diffusion Barriers ◽  
Thermally Stable ◽  
Ohmic Behavior ◽  
Tin Film ◽  
The Stability ◽  
P Type

AbstractWe report on contacts to p-type GaAs formed by a GaAs/Pt/TiN/Ag system. Ohmic behavior in this system is believed to be accomplished by the solidstate reaction of Pt with GaAs. This reaction is confined by the TiN film which is thermally stable. In addition, the TiN film acts as an excellent diffusion barrier in preventing the intermixing of the top Ag layer with GaAs or Pt. Contacts formed with such controlled reaction have important implications for the stability of shallow p-n junction devices.

Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System

1989 ◽  
Vol 148 ◽  
Author(s):  
E.D. Marshall ◽  
S.S. Lau ◽  
C.J. Palmstrøm ◽  
T. Sands ◽  
C.L. Schwartz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Solid Phase Regrowth ◽  
Ohmic Contact Formation ◽  
Secondary Ion

ABSTRACTAnnealed Ge/Pd/n-GaAs samples utilizing substrates with superlattice marker layers have been analyzed using high resolution backside secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Interfacial compositional and microstructural changes have been correlated with changes in contact resistivity. The onset of good ohmic behavior is correlated with the decomposition of an intermediate epitaxial Pd4(GaAs,Ge2) phase and solid-phase regrowth of Ge-incorporated GaAs followed by growth of a thin Ge epitaxial layer.

Au/Ge/Pd Ohmic Contacts to n-TYPE InP

1992 ◽  
Vol 260 ◽  
Author(s):  
Ping Jian ◽  
Douglas G. Ivey ◽  
Robert Bruce ◽  
Gordon Knight
Keyword(s):  
Thermal Stability ◽  
Contact Resistance ◽  
Transmission Line ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Changes ◽  
Ohmic Behavior ◽  
Quaternary Phase ◽  
Transmission Line Method ◽  
Ohmic Contact Formation

ABSTRACTOhmic contact formation and thermal stability in a Au/Ge/Pd metallization to n-type InP, doped to a level of 1017 cm-3, have been investigated. Contact resistance was measured using a transmission line method, while microstructural changes were examined by means of TEM, EDX, CBED and SAD. Contacts became ohmic after annealing at temperatures ranging from 300°C to 375°C. A minimum contact resistance of 2.5×l0-6 Ω-cm2 was obtained after annealing at 350°C for 320s. The drop in resistance to ohmic behavior corresponded to the decomposition of an epitaxial quaternary phase (Au-Ge-Pd-P). Annealing at 400°C and above resulted in Au10In3 spiking into InP and a break down of contact lateral uniformity, which increased contact resistance.

Pt3In7 Ohmic Contacts to n-TYPE GaAs

1992 ◽  
Vol 260 ◽  
Author(s):  
D. Swenson ◽  
Y. A. Chang
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Ohmic Behavior

ABSTRACTA thermodynamic and kinetic rationale was utilized to select Pt3In7 as an ohmic contact to n-GaAs. This analysis predicted that the contact metallurgy would be very simple and extremely uniform upon annealing. Preliminary electrical results showed that annealing samples at temperatures of 650 °C or higher led to ohmic behavior. A contact resistance of 3.4 × 10-5 Ω-cm2 was found upon annealing an uncapped contact at 750 °C for 15 s.

scholarly journals Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate

2019 ◽  
Vol 2019 ◽  
pp. 1-5
Author(s):  
Seongjun Kim ◽  
Hong-Ki Kim ◽  
Minwho Lim ◽  
Seonghoon Jeong ◽  
Min-Jae Kang ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Annealed Sample ◽  
Contact Interface ◽  
Ohmic Behavior ◽  
Current Path ◽  
Horizontal Type ◽  
Nisi Phase ◽  
Contact Mechanism ◽  
A Current

In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H-n-SiC was investigated by evaluating the electrical and microstructural properties in the contact interface as a function of annealing temperatures ranging from 950 to 1100°C. We determined that Ni-silicide, especially the NiSi phase, plays a key role in the formation of ohmic contacts rather than an increase in carbon vacancies in the C-faced SiC substrate. A vertically oriented NiSi phase was observed in the thermally annealed sample at the optimized temperature that behaves as a current path. A further increase in annealing temperature leads to the degradation of ohmic behavior due to the formation of horizontal-type NiSi in the Ni-rich Ni-silicide/NiSi/SiC structure.

Nonspiking ohmic contact top‐GaAs by solid‐phase regrowth

1990 ◽  
Vol 68 (11) ◽  
pp. 5714-5718 ◽  
Author(s):  
C. C. Han ◽  
X. Z. Wang ◽  
L. C. Wang ◽  
E. D. Marshall ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Solid Phase Regrowth
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