Materials Characterization on Optically Pumped InGaN/GaN Lasers by Farfield Measurements and Fourier Analysis of the Emission Spectrum

1997 ◽  
Vol 482 ◽  
Author(s):  
D. Hofstetter ◽  
R. L. Thornton ◽  
L. T. Romano ◽  
D. P. Bour ◽  
N. M. Johnson
Keyword(s):  
Optical Pumping ◽  
Emission Spectra ◽  
Materials Characterization ◽  
Spectral Measurements ◽  
Optically Pumped ◽  
Critical Material ◽  
Material Quality ◽  
Quantum Well Laser ◽  
Cladding Layers ◽  
Multi Quantum Well

AbstractWe report materials characterization on optically pumped InGaN/GaN lasers by farfield and spectral measurements. Through a comparison between measured and calculated farfield data for an In0.15Ga0.85N/In0.05Ga0.95N multi quantum well laser structure with AIGaN cladding layers, we could extract important information about the optical confinement in the transverse direction. The analysis of Fourier-transformed emission spectra of our devices allowed us to make qualitative statements about the material quality in terms of surface pits and cracks. We believe that optical pumping with these supplementary techniques is an important and powerful tool which helps to overcome critical material quality requirements in gallium-nitride.

Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method

2012 ◽  
Vol 1432 ◽  
Author(s):  
D. Cheney ◽  
R. Deist ◽  
B. Gila ◽  
F. Ren ◽  
P. Whiting ◽  
...  
Keyword(s):  
Band Gap ◽  
Optical Pumping ◽  
Drain Current ◽  
Stress Tests ◽  
Optically Pumped ◽  
Gan Hemt ◽  
Load Line ◽  
Gan Hemts ◽  
Dc Stress

ABSTRACTBy pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), VGS=-2, VDS=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.

2μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer

2014 ◽  
Vol 35 (10) ◽  
pp. 1205-1209
Author(s):  
安宁 AN Ning ◽  
刘国军 LIU Guo-jun ◽  
李占国 LI Zhan-guo ◽  
常量 CHANG Liang ◽  
魏志鹏 WEI Zhi-peng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Quantum Well Laser ◽  
Multi Quantum Well
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