Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method

2012 ◽  
Vol 1432 ◽  
Author(s):  
D. Cheney ◽  
R. Deist ◽  
B. Gila ◽  
F. Ren ◽  
P. Whiting ◽  
...  
Keyword(s):  
Band Gap ◽  
Optical Pumping ◽  
Drain Current ◽  
Stress Tests ◽  
Optically Pumped ◽  
Gan Hemt ◽  
Load Line ◽  
Gan Hemts ◽  
Dc Stress

ABSTRACTBy pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), VGS=-2, VDS=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.

Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress

2014 ◽  
Vol 54 (12) ◽  
pp. 2668-2674 ◽  
Author(s):  
Yufei Wu ◽  
Chia-Yu Chen ◽  
Jesús A. del Alamo
Keyword(s):  
Activation Energy ◽  
High Power ◽  
Drain Current ◽  
Gan Hemts ◽  
Dc Stress

scholarly journals An Accurate Switching Current Measurement Based on Resistive Shunt Applied to Short Circuit GaN HEMT Characterization

2021 ◽  
Vol 11 (19) ◽  
pp. 9138
Author(s):  
Carmine Abbate ◽  
Leandro Colella ◽  
Roberto Di Folco ◽  
Giovanni Busatto ◽  
Emanuele Martano ◽  
...  
Keyword(s):  
Electronic Device ◽  
Short Circuit ◽  
Drain Current ◽  
Experimental Measurements ◽  
Measurement Circuit ◽  
Voltage Measurement ◽  
Switching Speed ◽  
Gan Hemt ◽  
Gan Hemts ◽  
High Switching Speed

The use of a resistive shunt is one of the simplest and most used methods for measuring current in an electronic device. Many researchers use this method to measure drain current during short-circuiting of fast devices such as GaN HEMTs. However, the high switching speed of these devices together with the non-ideality of the shunt resistors produces an overestimation of the current in the initial phases of the transient. In this paper, a passive compensation network is proposed, which is formed by adding an inductor to the voltage measurement circuit and allows an accurate measurement of the current using the resistive shunt even in the presence of very fast devices. The proposed method is validated by simulations and experimental measurements.

scholarly journals ABOVE 2 A/mm DRAIN CURRENT DENSITY OF GaN HEMTS GROWN ON SAPPHIRE

2007 ◽  
Vol 17 (01) ◽  
pp. 91-95 ◽  
Author(s):  
F. Medjdoub ◽  
J.-F. Carlin ◽  
M. Gonschorek ◽  
E. Feltin ◽  
M. A. Py ◽  
...  
Keyword(s):  
Current Density ◽  
Carrier Density ◽  
Drain Current ◽  
Small Signal ◽  
High Frequencies ◽  
Gan Hemt ◽  
Sapphire Substrates ◽  
Hemt Structure ◽  
Gan Hemts ◽  
Lattice Matched

We report on the investigation of an InAlN/GaN HEMT structure, delivering higher sheet carrier density than the commonly used AIGaN/GaN system. We achieved in a reproducible way more than 2 A/mm maximum drain current density for a gate length of 0.25 μm with unpassivated undoped devices realized on sapphire substrates. Small signal measurements yield a F T = 31 GHz and F MAX = 52 GHz , which illustrates the capability of these structures to operate at high frequencies. Moreover, the pulsed analysis indicates a more stable surface in the case of AlInN than that of AlGaN , attributed to the lattice matched growth of this barrier with 17% In content on GaN , avoiding strain piezo polarization in the material.

WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS

2007 ◽  
Vol 17 (01) ◽  
pp. 3-9 ◽  
Author(s):  
M. Sugimoto ◽  
H. Ueda ◽  
T. Uesugi ◽  
T. kachi
Keyword(s):  
High Performance ◽  
Drain Current ◽  
Wide Bandgap ◽  
Hybrid Vehicles ◽  
High Current ◽  
Automotive Applications ◽  
Power Devices ◽  
Gan Hemt ◽  
Gan Hemts ◽  
Current Operation

In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

ANALYSIS OF LOW FREQUENCY DRAIN CURRENT NOISE IN AlGaN/GaN HEMTS ON Si SUBSTRATE

2004 ◽  
Vol 04 (02) ◽  
pp. L319-L328
Author(s):  
NATHALIE MALBERT ◽  
NATHALIE LABAT ◽  
ARNAUD CURUTCHET ◽  
ANDRE TOUBOUL ◽  
CHRISTOPHE GAQUIÈRE ◽  
...  
Keyword(s):  
Low Frequency ◽  
Drain Current ◽  
Current Noise ◽  
Gate Length ◽  
Gate Leakage Current ◽  
Si Substrate ◽  
Saturation Regime ◽  
Gan Hemt ◽  
Noise Measurements ◽  
Gan Hemts

This paper deals with the analysis of the low frequency drain current noise in gallium nitride FET on silicon substrate. The drain current noise is compared for devices with gate length of 1.5μm and 3.5μm. We discuss two types of noise mechanisms both used as a diagnostic tool: generation-recombination noise and 1/f noise. Measurements in saturation regime have revealed a g-r noise mechanism correlated with the activation of discrete traps. The analysis of the normalized drain current spectral density vs. the normalized gate voltage Vgn=(Vg-Vt)/|Vt| has been studied. In particular, we have pointed out that the evolution of the 1/f noise level strongly depends on the evolution of the gate leakage current. On the basis of the 1/f normalized noise, i.e. the αH/N parameter, GaN HEMT on silicon have demonstrated as low LF noise as GaAs based transistors.

scholarly journals A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Bradley D. Christiansen ◽  
Eric R. Heller ◽  
Ronald A. Coutu ◽  
Ramakrishna Vetury ◽  
Jeffrey B. Shealy
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
Drain Current ◽  
Conventional Wisdom ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Bias Stress ◽  
Gan Hemt ◽  
Positive Threshold ◽  
Gan Hemts

Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

Highly Scaled Graded Channel GaN HEMT with Peak Drain Current of 2.48 A/mm

2021 ◽  
pp. 153774
Author(s):  
Husna Hamza K ◽  
D. Nirmal ◽  
A.S.Augustine Fletcher ◽  
L.Arivazhagan ◽  
J.Ajayan ◽  
...  
Keyword(s):  
Drain Current ◽  
Gan Hemt

scholarly journals Time-resolved ARPES Determination of a Quasi-Particle Band Gap and Hot Electron Dynamics in Monolayer MoS2

Nano Letters ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 7363-7370
Author(s):  
Woojoo Lee ◽  
Yi Lin ◽  
Li-Syuan Lu ◽  
Wei-Chen Chueh ◽  
Mengke Liu ◽  
...  
Keyword(s):  
Band Gap ◽  
Hot Electron ◽  
Electron Dynamics ◽  
Monolayer Mos2 ◽  
Quasi Particle ◽  
Time Resolved
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