Influence of Mo on the Epitaxial Crystallization of Silicon

1997 ◽  
Vol 481 ◽  
Author(s):  
S. Thoma ◽  
J. K. N. Lindner ◽  
B. Stritzker
Keyword(s):  
Amorphous Silicon ◽  
Depth Distribution ◽  
Solid Phase ◽  
Surface Layers ◽  
Cross Sectional ◽  
Epitaxial Crystallization ◽  
Si Substrates ◽  
High Doses ◽  
Amorphous Surface ◽  
Different Doses

ABSTRACTThe influence of Mo atoms on the solid phase epitaxial crystallization of amorphous silicon layers on (100) and (111) Si substrates has been studied by RBS/channeling and cross-sectional TEM. For this purpose, Mo doped amorphous surface layers were produced by low temperature 180 keV Mo+ ion implantation with different doses. Mo is observed to cause enhanced crystallization rates for both (100) and (111) substrates, compared to literature data on pure amorphous silicon. Similar to pure Si, recrystallization in <100> directions is much faster than in <111> directions, where two different velocities are found. For (111) substrates, the formation of thick, uniformly twinned layers is observed. Annealing for several hours at 550° C does not lead to detectable changes of the Mo depth distribution, but for high doses the formation of hexagonal MoSi2 precipitates is observed.

Ion-Beam Induced Epitaxial Crystallization of NiSi2 And CoSi2

1989 ◽  
Vol 157 ◽  
Author(s):  
M.C. Ridgway ◽  
R.G. Elliman ◽  
J.S. Williams
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Activation Energies ◽  
Layer By Layer ◽  
Surface Layers ◽  
Epitaxial Crystallization ◽  
Si Substrates ◽  
Amorphous Surface

ABSTRACTIon—beam induced epitaxial crystallization (IBIEC) of amorphous N1Si2 and CoSi2 layers is demonstrated. Epitaxial metal suicide layers on (111) Si substrates were implanted with 40 keV Si ions to form amorphous surface layers. IBIEC of amorphous NiSi2 and CoSi2 layers was induced at 13—74°C with 1.5 MeV Ne ion irradiation and proceeded in a layer—by—layer manner from the original amorphous/crystalline interface with activation energies of 0.26 ± 0.07 and 0.21 ± 0.06 eV for N1Si2 and CoSi2, respectively.

Epitaxial Crystallization of Amorphous Silicon Layers under Ion Irradiation: Orientation Dependence

1987 ◽  
Vol 93 ◽  
Author(s):  
D. M. Maher ◽  
R. G. Elliman ◽  
J. Linnros ◽  
J. S. Williams ◽  
R. V. Knoell ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Orientation Dependence ◽  
Epitaxial Crystallization ◽  
Beam Experiment ◽  
Interfacial Defects ◽  
Behavior Supports ◽  
Orientation Dependency

ABSTRACTIon-beam induced epitaxial crystallization of thin amorphous silicon layers at {100} and {110} crystalline/amorphous interfaces exhibits no orientation dependencies, whereas at a {111} crystalline/amorphous interface a weak orientation dependency relative to thermal-induced epitaxial crystallization is observed. This behavior supports an interpretation in which the thermal crystallization process is dominated by the need to form interfacial defects and/or growth sites and in the ion-beam experiment this formation process ocurrs athermally. It is thought that the observed orientation dependent regrowth on a {111} substrate relative to a {100} (or {110}) substrate is associated with the special correlated atomic sequencing which is believed to control solid-phase epitaxial crystallization at a {111) crystalline/amorphous interface.

Effect of Fluorine on the Diffusion of Boron in Amorphous Silicon

2002 ◽  
Vol 717 ◽  
Author(s):  
J. M. Jacques ◽  
L. S. Robertson ◽  
K. S. Jones ◽  
Joe Bennett
Keyword(s):  
Amorphous Silicon ◽  
Boron Concentration ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Diffusion Characteristics ◽  
Junction Formation ◽  
Amorphous Surface ◽  
Boron Diffusivity

AbstractFluorine and boron co-implantation within amorphous silicon has been studied in order to meet the process challenges regarding p+ ultra-shallow junction formation. Previous experiments have shown that fluorine can reduce boron TED (Transient Enhanced Diffusion), enhance boron solubility and reduce sheet resistance. In this study, boron diffusion characteristics prior to solid phase epitaxial regrowth (SPER) of the amorphous layer in the presence of fluorine are addressed. Samples were pre-amorphized with Si+ at a dose of 1x1015 ions/cm2 and energy of 70 keV, leading to a deep continuous amorphous surface of approximately 1500 Å. After pre-amorphization, B+ was implanted at a dose of 1x1015 ions/cm2 and energy of 500 eV, while F+ was implanted at a dose of 2x1015 ions/cm2 and energies ranging from 3 keV to 9 keV. Subsequent furnace anneals for the F+ implant energy of 6 keV were conducted at 550°C, for times ranging from 5 minutes to 260 minutes. During annealing, the boron in samples co-implanted with fluorine exhibited significant enhanced diffusion within amorphous silicon. After recrystallization, the boron diffusivity was dramatically reduced. Boron in samples with no fluorine did not diffuse during SPER. Prior to annealing, SIMS profiles demonstrated that boron concentration tails broadened with increasing fluorine implant energy. Enhanced dopant motion in as-implanted samples is presumably attributed to implant knock-on or recoil effects.

Enhanced Boron Diffusion in Amorphous Silicon

2004 ◽  
Vol 810 ◽  
Author(s):  
J.M. Jacques ◽  
N. Burbure ◽  
K.S. Jones ◽  
M.E. Law ◽  
L.S. Robertson ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Boron Diffusion ◽  
Cross Sectional ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Secondary Ion

ABSTRACTIn prior works, we demonstrated the phenomenon of fluorine-enhanced boron diffusion within self-amorphized silicon. Present studies address the process dependencies of low temperature boron motion within ion implanted materials utilizing a germanium amorphization. Silicon wafers were preamorphized with either 60 keV or 80 keV Ge+ at a dose of 1×1015 atoms/cm2. Subsequent 500 eV, 1×1015 atoms/cm211B+ implants, as well as 6 keV F+ implants with doses ranging from 1×1014 atoms/cm2 to 5×1015 atoms/cm2 were also done. Furnace anneals were conducted at 550°C for 10 minutes under an inert N2 ambient. Secondary Ion Mass Spectroscopy (SIMS) was utilized to characterize the occurrence of boron diffusion within amorphous silicon at room temperature, as well as during the Solid Phase Epitaxial Regrowth (SPER) process. Amorphous layer depths were verified through Cross-Sectional Transmission Electron Microscopy (XTEM) and Variable Angle Spectroscopic Ellipsometry (VASE). Boron motion within as-implanted samples is observed at fluorine concentrations greater than 1×1020 atoms/cm3. The magnitude of the boron motion scales with increasing fluorine dose and concentration. During the initial stages of SPER, boron was observed to diffuse irrespective of the co-implanted fluorine dose. Fluorine enhanced diffusion at room temperature does not appear to follow the same process as the enhanced diffusion observed during the regrowth process.

Crystallisation and Diffusion in Oriented Sapphire Amorphised by Zinc Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
L. A. Bunn ◽  
D. K. Sood
Keyword(s):  
Epitaxial Growth ◽  
Zinc Ion ◽  
High Dose ◽  
Low Doses ◽  
Surface Layers ◽  
Rapid Diffusion ◽  
High Doses ◽  
Amorphous Surface ◽  
And Diffusion ◽  
Post Implantation

AbstractHigh dose zinc implantation (1×1016 to 6×1016 ions/cm2) into c-axis sapphire at 770K produces amorphous surface layers. Post-implantation annealing at temperatures at and above 800°C show that the modes of recrystallisation are strongly dependant on ion dose. At low doses formation of crystallites of α and γ phase Al2O3 is seen, with no evidence of any planar epitaxial growth at the original crystalline-amorphous interface. The zinc is seen to diffuse isotropically within the crystallised layer and becomes partially substitutional within the crystallites. At high doses, however, the formation of crystallites is inhibited, with the layer remaining amorphous. A more rapid diffusion of zinc is seen in the amorphous Al2O3, with some of the zinc being lost at the surface.

High Concentrations of Erbium In Crystal Silicon by Thermal Or Ion-Beam-Induced Epitaxy of Erbium-Implanted Amorphous Silicon

1993 ◽  
Vol 301 ◽  
Author(s):  
J. S. Custer ◽  
A. Polman ◽  
E. Snoeks ◽  
G. N. van den Hoven
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Beam ◽  
Solid Phase Epitaxy ◽  
Crystal Silicon ◽  
Epitaxial Crystallization ◽  
Amorphous Si ◽  
High Concentrations ◽  
Er Doped

ABSTRACTSolid phase epitaxy and ion-beam-induced epitaxial crystallization of Er-doped amorphous Si are used to incorporate high concentrations of Er in crystal Si. During solid phase epitaxy, substantial segregation and trapping of Er is observed, with maximum Er concentrations trapped in single crystal Si of up to 2 × 1020 /cm3. Ion-beam-induced regrowth results in very little segregation, with Er concentrations of more than 5 × 1020 /cm3 achievable. Photoluminescence from the incorporated Er is observed.

Cross-Sectional Tem Study of Rhodium on Single Crystal and Amorphous Silicon

1984 ◽  
Vol 37 ◽  
Author(s):  
S. R. Herd ◽  
P. A. Psaras ◽  
I. J. Fishera ◽  
K. N. Tu
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Layer Thickness ◽  
Cross Sectional ◽  
Si Substrates ◽  
Limited Supply ◽  
Infinite Supply ◽  
Beam Deposition

AbstractA crystalline interfacial bilayer, consisting of about 5nm each of RhSi and Rh2Si was found after E-beam deposition of 95nm of Rh onto either Si[100] or α-Si substrates. Cross sectional TEM of the as-deposited and annealed specimens showed no change occurred after 24hrs at 200° C. With infinite supply of Si, as on the Si[100] substrate, RhSi was found as a major growing phase, although Rh2Si also grew at a much slower rate. With a limited supply of Si, as in the α-Si case, RhSi first formed until all α-Si was consumed (2 hrs at 400°C) and then transformed partially to Rh2Si after 4 hrs at 400°C. This transformation could be confirmed by RBS since Rh2Si layer thickness exceeded 30nm

High Concentrations of Erbium in Crystal Silicon by Thermal or Ion-Beam-Induced Epitaxy of Erbium-Implanted Amorphous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
J. S. Custer ◽  
A. Polman ◽  
E. Snoeks ◽  
G. N. van den Hoven
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Beam ◽  
Solid Phase Epitaxy ◽  
Crystal Silicon ◽  
Epitaxial Crystallization ◽  
Amorphous Si ◽  
High Concentrations ◽  
Er Doped

AbstractSolid phase epitaxy and ion-beam-induced epitaxial crystallization of Er-doped amorphous Si are used to incorporate high concentrations of Er in crystal Si. During solid phase epitaxy, substantial segregation and trapping of Er is observed, with maximum Er concentrations trapped in single crystal Si of up to 2 x 1020 /cm3. Ion-beam-induced regrowth results in very little segregation, with Er concentrations of more than 5 X 1020 /cm3 achievable. Photoluminescence from the incorporated Er is observed.

Ion Implantation and Annealing of Crystalline Oxides

1985 ◽  
Vol 60 ◽  
Author(s):  
C. W. White ◽  
P. S. Sklad ◽  
L. A. Boatner ◽  
G. C. Farlow ◽  
C. J. McHargue ◽  
...  
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Single Crystal ◽  
Solid Phase ◽  
Planar Interface ◽  
Solid Phase Epitaxy ◽  
Surface Layers ◽  
Α Phase ◽  
Amorphous Surface ◽  
Crystalline Oxides

AbstractThe crystallization of amorphous surface layers produced by ion implantation of single-crystal α-Al2O3 and CaTiO3 are discussed. During annealing, amorphous A12O3 converts first to the α-phase. The crystallized γ then transforms to the a-phase by the motion of a well-defined planar interface. The temperature dependence of the velocity of the γ/α interface has been measured and is characterized by an activation energy of ∼3.6 eV. In CaTiO3, crystallization of the amorphous phase takes place by solid-phase epitaxy. The velocity of the amorphous/crystal interface is characterized by an activation energy of 1.3 eV.

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