Cross-Sectional Tem Study of Rhodium on Single Crystal and Amorphous Silicon

1984 ◽  
Vol 37 ◽  
Author(s):  
S. R. Herd ◽  
P. A. Psaras ◽  
I. J. Fishera ◽  
K. N. Tu
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Layer Thickness ◽  
Cross Sectional ◽  
Si Substrates ◽  
Limited Supply ◽  
Infinite Supply ◽  
Beam Deposition

AbstractA crystalline interfacial bilayer, consisting of about 5nm each of RhSi and Rh2Si was found after E-beam deposition of 95nm of Rh onto either Si[100] or α-Si substrates. Cross sectional TEM of the as-deposited and annealed specimens showed no change occurred after 24hrs at 200° C. With infinite supply of Si, as on the Si[100] substrate, RhSi was found as a major growing phase, although Rh2Si also grew at a much slower rate. With a limited supply of Si, as in the α-Si case, RhSi first formed until all α-Si was consumed (2 hrs at 400°C) and then transformed partially to Rh2Si after 4 hrs at 400°C. This transformation could be confirmed by RBS since Rh2Si layer thickness exceeded 30nm

Structural Defects in thin Film Amorphous Silicon Films Deposited on Textured TCO Material

1995 ◽  
Vol 377 ◽  
Author(s):  
D. Knoesen ◽  
R. E. I. Schropp ◽  
W. F. Van Der Weg
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Surface Morphology ◽  
Amorphous Silicon ◽  
Layer Thickness ◽  
Fill Factor ◽  
Type A ◽  
Structural Defects ◽  
Cross Sectional ◽  
Structure And Morphology

ABSTRACTA cross sectional TME study has been conducted into the structure and morphology of p- and i-type a-Si:H layers of device quality deposited on textured TCO on glass. The layer thickness over peaks is shown to be equivalent to that for flat regions, while defective regions are found in narrow valleys, initiating from the pit of the valleys. These regions may act as regions of excessive recombination and/or shunting regions, thus leading to a reduced Voc and fill factor in thin solar cells. A cosine relationship was found between the deposited thickness and the facet angles of the surface TCO crystals. It is concluded that for best performance of the deposited layer, the deposition has to be completely isotropie, and that the preferred surface morphology of textured TCO be sharp peaks with wider valleys.

Structural characterization and thermal stability of W/Si multilayers

1993 ◽  
Vol 8 (10) ◽  
pp. 2600-2607 ◽  
Author(s):  
M. Brunel ◽  
S. Enzo ◽  
M. Jergel ◽  
S. Luby ◽  
E. Majkova ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Thickness Ratio ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Layer Thickness Ratio ◽  
Transmission Electron ◽  
Thermal Stability Of ◽  
Beam Deposition

Tungsten/silicon multilayers with tungsten layers of a thickness of 1–2 nm were prepared by means of electron beam deposition. Their structure and thermal stability under rapid thermal annealing were investigated by a combination of x-ray diffraction techniques and cross-sectional transmission electron microscopy. The crystallization behavior was found to depend on the interdiffusion and mixing at the tungsten/silicon interfaces during deposition as well as during annealing. The as-deposited tungsten/silicon multilayers were amorphous and remained stable after annealing at 250 °C/40 s. Interdiffusion and crystallization occurred after annealing all samples from 500 °C/40 s up to 1000 °C/20 s. By performing the same heat treatment in the tungsten/silicon multilayers, the formation of body-centered cubic W was observed with a layer thickness ratio δW/δsi = 1, whereas tetragonal WSi2 was detected in tungsten/silicon multilayers with a layer thickness ratio of δw/δsi ∼0.25. This dependence of the crystallization products on the layer thickness ratio δw/δsi originates from the different phenomena of interdiffusion and mixing at the tungsten/silicon interfaces. The possible formation of bcc tungsten as a first stage of crystallization of tungsten-silicon amorphous phase, rich in tungsten, is discussed.

Tem and X-Ray Investigation of Single Crystal-Like Zirconia Films Fabricated by Dual Ion Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
Kevin G. Ressler ◽  
Neville Sonnenberg ◽  
Michael J. Cima
Keyword(s):  
Single Crystal ◽  
Quartz Substrate ◽  
Ion Beam ◽  
Film Plane ◽  
Film Structure ◽  
Cross Sectional ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Amorphous Quartz ◽  
Beam Deposition

AbstractSingle crystal-like yttria-stabilized zirconia (YSZ) thin films have been deposited on amorphous quartz, polycrystalline zirconia, single crystal Si, and Hastelloy substrates using dual ion beam deposition (IBAD). These films are highly crystallographically aligned both normal to and within the film plane. The films are deposited at low substrate temperatures (<200°C), and the film orientation is substrate independent. θ-2θ X-ray diffraction, X-ray rocking curves, X-ray pole figures and X-ray phi scans are used to evaluate the film structure. High resolution cross-sectional TEM is used to examine the evolution of crystallographic film alignment on an amorphous quartz substrate. The data suggest that the evolution of biaxial alignment is nucleation controlled under these conditions.

Influence of Mo on the Epitaxial Crystallization of Silicon

1997 ◽  
Vol 481 ◽  
Author(s):  
S. Thoma ◽  
J. K. N. Lindner ◽  
B. Stritzker
Keyword(s):  
Amorphous Silicon ◽  
Depth Distribution ◽  
Solid Phase ◽  
Surface Layers ◽  
Cross Sectional ◽  
Epitaxial Crystallization ◽  
Si Substrates ◽  
High Doses ◽  
Amorphous Surface ◽  
Different Doses

ABSTRACTThe influence of Mo atoms on the solid phase epitaxial crystallization of amorphous silicon layers on (100) and (111) Si substrates has been studied by RBS/channeling and cross-sectional TEM. For this purpose, Mo doped amorphous surface layers were produced by low temperature 180 keV Mo+ ion implantation with different doses. Mo is observed to cause enhanced crystallization rates for both (100) and (111) substrates, compared to literature data on pure amorphous silicon. Similar to pure Si, recrystallization in <100> directions is much faster than in <111> directions, where two different velocities are found. For (111) substrates, the formation of thick, uniformly twinned layers is observed. Annealing for several hours at 550° C does not lead to detectable changes of the Mo depth distribution, but for high doses the formation of hexagonal MoSi2 precipitates is observed.

The stabilization of B.C.C. Cu in Cu/Nb nanolayered composites

1996 ◽  
Vol 54 ◽  
pp. 228-229
Author(s):  
H. Kung ◽  
A.J. Griffin ◽  
Y.C. Lu ◽  
K.E. Sickafus ◽  
T.E. Mitchell ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Layer Thickness ◽  
Volume Fraction ◽  
Ion Beam ◽  
High Strength ◽  
Cross Sectional ◽  
Metastable Structure ◽  
High Resolution Tem ◽  
Potential Improvement ◽  
Two Phases

Materials with compositionally modulated structures have gained much attention recently due to potential improvement in electrical, magnetic and mechanical properties. Specifically, Cu-Nb laminate systems have been extensively studied mainly due to the combination of high strength, and superior thermal and electrical conductivity that can be obtained and optimized for the different applications. The effect of layer thickness on the hardness, residual stress and electrical resistivity has been investigated. In general, increases in hardness and electrical resistivity have been observed with decreasing layer thickness. In addition, reduction in structural scale has caused the formation of a metastable structure which exhibits uniquely different properties. In this study, we report the formation of b.c.c. Cu in highly textured Cu/Nb nanolayers. A series of Cu/Nb nanolayered films, with alternating Cu and Nb layers, were prepared by dc magnetron sputtering onto Si {100} wafers. The nominal total thickness of each layered film was 1 μm. The layer thickness was varied between 1 nm and 500 nm with the volume fraction of the two phases kept constant at 50%. The deposition rates and film densities were determined through a combination of profilometry and ion beam analysis techniques. Cross-sectional transmission electron microscopy (XTEM) was used to examine the structure, phase and grain size distribution of the as-sputtered films. A JEOL 3000F high resolution TEM was used to characterize the microstructure.

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

Aligned single crystal Al-catalyzed boron nanorods on Si substrates

2007 ◽  
Vol 56 (1) ◽  
pp. 35-39 ◽  
Author(s):  
Qing Yang ◽  
Jian Sha ◽  
Lei Wang ◽  
Zhizhong Yuan ◽  
Deren Yang
Keyword(s):  
Single Crystal ◽  
Si Substrates

scholarly journals The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Phase Transitions ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Diamond Wire

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

Amorphous Phase Formation of Titanium Silicide on The 4° off-Axis and on-Axis Si(100) Substrates

1996 ◽  
Vol 427 ◽  
Author(s):  
Hyeongtag Jeon ◽  
Sukjae Lee ◽  
Hwackjoo Lee ◽  
Hyun Ruh
Keyword(s):  
Layer Thickness ◽  
Amorphous Layer ◽  
Film Deposition ◽  
Titanium Silicide ◽  
Atomic Scale ◽  
Phase Identification ◽  
Atomic Steps ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Scale Roughness

AbstractTwo different Si(100) substrates, the 4°off-axis and the on-axis Si(100), were prepared. Ti thin films were deposited in an e-beam evaporation system and the amorphous layers of Ti-silicide were formed at different annealing temperatures. The Si(100) substrates before Ti film deposition were examined with AFM to verify the atomic scale roughness of the initial Si substrates. The amorphous layer was observed by HRTEM and TEM. And the chemical analysis and phase identification were examined by AES and XRD. The Si(100) substrate after HF clean shows the atomic scale microroughness such as atomic steps and pits on the Si surface. The on-axis Si(100) substrate exhibits much rougher surface morphologies than those of the off-axis Si(100). These differences of atomic scale roughnesses of Si substrates result in the difference of the thicknesses of amorphous Ti-silicide layers. The amorphous layer thicknesses on the on-axis exhibit thicker than those of the off-axis Si(100) and these differences inamorphous layer thicknesses became decreased as annealing temperatures increased. These indicate that the role of the atomic scale roughness on the amorphous layer thickness is much significant at low temperatures. In this study, the correlation between the atomic scale roughness and the amorphous layer thickness is discussed in terms of the atomic steps and pits based on the observation with using analysis tools such as AFM, TEM and HRTEM.

The Influence of Annealing Temperature on the Characteristics of 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 Thin Films

2010 ◽  
Vol 434-435 ◽  
pp. 263-266
Author(s):  
Chien Chen Diao ◽  
Chia Ching Wu ◽  
Cheng Fu Yang ◽  
Chao Chin Chan
Keyword(s):  
Thin Films ◽  
Deposition Process ◽  
Leakage Currents ◽  
Cross Sectional ◽  
Si Substrates ◽  
Polarization Characteristics ◽  
Magnetron Sputter ◽  
Xrd Patterns ◽  
Top View ◽  
Better Than

In this study, 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 + 1 wt% Bi2O3 (NBT-BT3) composition sintered at 1200oC for 2h is used as target to deposit the NBT-BT3 thin films. The excess 1wt% Bi2O3 is used to compensate the vaporization of Bi2O3 during the deposition process. Ferroelectric NBT-BT3 thin films are deposited on SiO2/Si and Pt/Ti/SiO2/Si substrates using RF magnetron sputter method using the ceramic target fabricated by ourselves. After depositing under the optimal parameters, the thin films are then heated by a conventional thermal annealing (CFA) process conducted in air at temperatures ranging from 600- 800oC for 60min. The morphologies of NBT- BT3 thin films are observed using SEM the crystalline structures of NBT-BT3 thin films are investigated using XRD patterns. The large memory window and stable leakage current density examination reveals that NBT-BT3 thin films annealed on 600oC are better than other thin films under different CTA temperatures. Finally, the top view and cross-sectional images of SEM, memory windows, leakage currents and polarization characteristics of NBT-BT3 thin films are also well developed.

Sign in / Sign up

Export Citation Format

Share Document