Ion-Beam Induced Epitaxial Crystallization of NiSi2 And CoSi2

1989 ◽  
Vol 157 ◽  
Author(s):  
M.C. Ridgway ◽  
R.G. Elliman ◽  
J.S. Williams
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Activation Energies ◽  
Layer By Layer ◽  
Surface Layers ◽  
Epitaxial Crystallization ◽  
Si Substrates ◽  
Amorphous Surface

ABSTRACTIon—beam induced epitaxial crystallization (IBIEC) of amorphous N1Si2 and CoSi2 layers is demonstrated. Epitaxial metal suicide layers on (111) Si substrates were implanted with 40 keV Si ions to form amorphous surface layers. IBIEC of amorphous NiSi2 and CoSi2 layers was induced at 13—74°C with 1.5 MeV Ne ion irradiation and proceeded in a layer—by—layer manner from the original amorphous/crystalline interface with activation energies of 0.26 ± 0.07 and 0.21 ± 0.06 eV for N1Si2 and CoSi2, respectively.

Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation

1994 ◽  
Vol 339 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
J. Stoemenos
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Beam Irradiation ◽  
Surface Layers ◽  
Near Surface ◽  
Transmission Electron ◽  
Amorphous Surface ◽  
Amorphous Sic

ABSTRACTThe evolution of the damage in the near surface region of single crystalline 6H-SiC generated by 200 keV Ge+ ion implantation at room temperature (RT) was investigated by Rutherford backscattering spectroscopy/chanelling (RBS/C). The threshold dose for amorphization was found to be about 3 · 1014 cm-2, Amorphous surface layers produced with Ge+ ion doses above the threshold were partly annealed by 300 keV Si+ ion beam induced epitaxial crystallization (IBIEC) at a relatively low temperature of 480°C For comparison, temperatures of at least 1450°C are necessary to recrystallize amorphous SiC layers without assisting ion irradiation. The structure and quality of both the amorphous and recrystallized layers were characterized by cross-section transmission electron microscopy (XTEM). Density changes of SiC due to amorphization were measured by step height measurements.

Ion Beam Induced Amorphization and Crystallization Processes in Silicon and GaAs

1986 ◽  
Vol 74 ◽  
Author(s):  
R. G. Elliman ◽  
J. S. Williams ◽  
S. T. Johnson ◽  
E. Nygren
Keyword(s):  
Crystal Growth ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Poor Quality ◽  
Layer By Layer ◽  
Epitaxial Crystallization ◽  
Non Linear ◽  
Thickness Layer

AbstractThin amorphous layers in crystalline Si and GaAs substates have been irradiated at selected temperatures with 1.5 MeV Ne+ ions to induce either epitaxial crystallization or amorphization. In Si, such irradiation can induce complete epitaxial crystallization of a 1000 A surface amorphous layer for temperatures typically >200°C whereas, at significantly lower temperatures, layer-by-layer amorphization results. Although epitaxial crystallization can also be stimulated in GaAs by ion irradiation at temperatures >65°C, the process is non-linear with ion dose and results in poor quality crystal growth for amorphous layers greater than a few hundred Angstroms in thickness. Layer-by-layer amorphization has not been observed in GaAs.

Ion Beam Induced Epitaxial Crystallization of Single Crystalline 6H-SiC

1993 ◽  
Vol 321 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
E. Glaser
Keyword(s):  
Surface Layer ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Single Crystalline ◽  
Epitaxial Crystallization ◽  
Amorphous Surface ◽  
20 Nm ◽  
First Time

ABSTRACTFor the first time, ion beam induced epitaxial crystallization (IBIEC) has been found in SiC. The effect of 300 keV Si+ irradiation through an amorphous surface layer in single crystalline 6H-SiC at 477+5°C has been investigated by RBS/C and XTEM. A shrinkage of the amorphous layer was found after ion irradiation at this temperature which is caused by both an ion dose independent thermal regrowth of about 20 nm and an additional ion beam induced epitaxial crystallization with a rate of about 1.5 nm/ 1016 cm−2.

Influence of Mo on the Epitaxial Crystallization of Silicon

1997 ◽  
Vol 481 ◽  
Author(s):  
S. Thoma ◽  
J. K. N. Lindner ◽  
B. Stritzker
Keyword(s):  
Amorphous Silicon ◽  
Depth Distribution ◽  
Solid Phase ◽  
Surface Layers ◽  
Cross Sectional ◽  
Epitaxial Crystallization ◽  
Si Substrates ◽  
High Doses ◽  
Amorphous Surface ◽  
Different Doses

ABSTRACTThe influence of Mo atoms on the solid phase epitaxial crystallization of amorphous silicon layers on (100) and (111) Si substrates has been studied by RBS/channeling and cross-sectional TEM. For this purpose, Mo doped amorphous surface layers were produced by low temperature 180 keV Mo+ ion implantation with different doses. Mo is observed to cause enhanced crystallization rates for both (100) and (111) substrates, compared to literature data on pure amorphous silicon. Similar to pure Si, recrystallization in <100> directions is much faster than in <111> directions, where two different velocities are found. For (111) substrates, the formation of thick, uniformly twinned layers is observed. Annealing for several hours at 550° C does not lead to detectable changes of the Mo depth distribution, but for high doses the formation of hexagonal MoSi2 precipitates is observed.

Ion Beam Induced Epitaxial Crystallization of Single Crystalline 6H-SiC

1993 ◽  
Vol 316 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
E. Glaser
Keyword(s):  
Surface Layer ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Single Crystalline ◽  
Epitaxial Crystallization ◽  
Amorphous Surface ◽  
20 Nm ◽  
First Time

ABSTRACTFor the first time, ion beam induced epitaxial crystallization (IBIEC) has been found in SiC. The effect of 300 keV Si+ irradiation through an amorphous surface layer in single crystalline 6H-SiC at 477±5°C has been investigated by RBS/C and XTEM. A shrinkage of the amorphous layer was found after ion irradiation at this temperature which is caused by both an ion dose independent thermal regrowth of about 20 nm and an additional ion beam induced epitaxial crystallization with a rate of about 1.5 nm/ 1016 cm-2.

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

Modification of Strength Properties of Oxide Materials by Ion Irradiation

2018 ◽  
Vol 781 ◽  
pp. 70-75
Author(s):  
Sergei Ghyngazov ◽  
Valeria Kostenko ◽  
Sergey Shevelev ◽  
Anatoliy I. Kupchishin ◽  
Aleksey Kondratyuk
Keyword(s):  
Magnesium Oxide ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Strength Properties ◽  
Critical Stress Intensity Factor ◽  
Ceramic Technology ◽  
Surface Layers ◽  
Nanosecond Duration ◽  
Near Surface ◽  
Moderate Power

The effect of ion irradiation on the strength characteristics of magnesium oxide and ceramics based on zirconia is studied. The MgO samples were a single crystal grown in an artificial manner. Samples of zirconium ceramics were prepared by ceramic technology. Irradiation of MgO crystals was carried out by Si+ ions (E = 150 keV), Fe+ (E = 70 keV), C+ (E = 50 keV) at room temperature. The fluence varied within the range (1016–1017) сm–2. The modification of the investigated types of ceramics was carried out by ions Al+ (Е = 60 keV), Ar+ (Е= 60 keV), N+ (E = 50 keV). We used ion beams of microsecond duration and moderate power (the current density in the pulse was 3 10-3 A/cm2). Fluence was 1017 cm-2. The irradiation of the ceramics with an ion beam C+ (E = 50 keV) was also performed with nanosecond duration (τ = 50 ns). It is established that ionic irradiation of magnesium oxide leads to an increase in crack resistance and a critical stress intensity factor. Irradiation of ceramics leads to hardening of its near-surface layers.

Epitaxial Crystallization of Amorphous Silicon Layers under Ion Irradiation: Orientation Dependence

1987 ◽  
Vol 93 ◽  
Author(s):  
D. M. Maher ◽  
R. G. Elliman ◽  
J. Linnros ◽  
J. S. Williams ◽  
R. V. Knoell ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Orientation Dependence ◽  
Epitaxial Crystallization ◽  
Beam Experiment ◽  
Interfacial Defects ◽  
Behavior Supports ◽  
Orientation Dependency

ABSTRACTIon-beam induced epitaxial crystallization of thin amorphous silicon layers at {100} and {110} crystalline/amorphous interfaces exhibits no orientation dependencies, whereas at a {111} crystalline/amorphous interface a weak orientation dependency relative to thermal-induced epitaxial crystallization is observed. This behavior supports an interpretation in which the thermal crystallization process is dominated by the need to form interfacial defects and/or growth sites and in the ion-beam experiment this formation process ocurrs athermally. It is thought that the observed orientation dependent regrowth on a {111} substrate relative to a {100} (or {110}) substrate is associated with the special correlated atomic sequencing which is believed to control solid-phase epitaxial crystallization at a {111) crystalline/amorphous interface.

Treаtment of аluminа сerаmiсs by intense eleсtrоn аnd iоn beаms

2021 ◽  
Vol 102 (2) ◽  
pp. 50-55
Author(s):  
S.А. Ghyngаzоv ◽  
◽  
V.А. Kоstenkо ◽  
S.V. Matrenin ◽  
A.I. Kupchishin ◽  
...  
Keyword(s):  
Electron Beam Irradiation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Beams ◽  
Ceramic Surface ◽  
Carbon Ions ◽  
Alumina Ceramics ◽  
Beam Irradiation ◽  
Surface Layers

The paper investigated modification of the microstructure of the surface layers of alumina ceramics under exposure to electron and ion beams. Electron beam irradiation was performed at accelerating voltage U = 15 kV and beam current of J = 70 A and J = 100 A. Ion irradiation was performed with carbon ions at accelerating voltage of U = 180 keV. The current density and energy density varied in the range of 15–85 A/cm2 and 0.3–1.5 J/cm2 , respectively. The amount of energy acting on the ceramic surface depended on the number of pulses N. It is shown that exposure to electron and ion beams changes the microstructure of the irradiated ceramic layer. In general, the effect of exposure is similar for electron and ion irradiation, and it is characterized not only by surface melting, but also by formation of a finer microstructure through the depth of the irradiated layer, which is oriented in the direction of the electron and ion beam exposure. It is shown that crystallization processes in overheated layers of ceramics depend on its type and melting point.

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