Titaniun Silicide Formation on Heavily Doped Arsenic-Implanted Silicon

1985 ◽  
Vol 48 ◽  
Author(s):  
S. L. Dowben ◽  
D. W. Marsh ◽  
G. A. Smith ◽  
N. Lewis ◽  
T. P. Chow ◽  
...  
Keyword(s):  
Refractory Metals ◽  
Titanium Silicide ◽  
Oxide Semiconductor ◽  
Processing Temperature ◽  
Silicide Formation ◽  
Subsequent Behavior ◽  
Heavily Doped ◽  
High Temperature Processing ◽  
Dopant Redistribution ◽  
New Generation

Every new generation of metal/oxide/semiconductor (MOS) technology has achieved higher densities and switching speeds. In order to match these characteristics of MOS circuits, a metallization which has a low resistivity, has electrical and chemical stability, can withstand high-temperature processing and can be manufactured relatively easily and reliably is needed. These requirements make the refractory metals a suitable if not ideal choice [1,2]. However, there has been some question as to the reliability of processing during silicide formation when using refractory metals. When the metallization is used to form self-aligned silicide structures over heavily doped source and drain regions, it is crucial to understand the subsequent behavior of the dopant during the processing period. Whereas others have studied different aspects of dopant redistribution [3–8], we report in this paper a systematic study of the electrical, structural, and elemental properties of titanium silicide formation on arsenic implanted silicon as a function of implanted dose and processing temperature.

Formation of Titanium Silicide on Ion-Implanted Silicon

1997 ◽  
Vol 470 ◽  
Author(s):  
Y.E Gilboa ◽  
M. Eizenberg
Keyword(s):  
Titanium Silicide ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Diffusion Controlled ◽  
Different Temperatures ◽  
Heavily Doped ◽  
Process Measurements ◽  
Dopant Redistribution ◽  
Secondary Ion ◽  
Different Doses

AbstractThe formation of TiSi2 was compared over samples implanted with arsenic and BF2 at different doses and annealed at different temperatures and lengths of time in a rapid thermal process. Measurements were done to determine the composition and thickness of the suicide formed. The composition was determined from Auger electron spectroscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy. The phase formation of the suicide was characterized by X-ray diffraction. Dopant redistribution was studied using secondary ion mass spectroscopy. Comparing the results of the different implant doses we found that the amount of suicide formed over heavily doped Si at formation temperatures of 600°C to 650°C was reduced compared to undoped Si. At formation temperatures above 750°C the implanted dose and species did not significantly affect the amount of suicide formation. Above 750°C the TiSi2 structure was found to be the C54 phase. Arsenic was found to diffuse into the Ti suicide layer in a diffusion controlled process. Boron was found to accumulate at the Ti suicide interfaces both with the substrate and with the surface TixOyNz layer.

Dopant redistribution during titanium silicide formation

1986 ◽  
Vol 59 (8) ◽  
pp. 2689-2693 ◽  
Author(s):  
Jun Amano ◽  
P. Merchant ◽  
T. R. Cass ◽  
J. N. Miller ◽  
Tim Koch
Keyword(s):  
Titanium Silicide ◽  
Silicide Formation ◽  
Dopant Redistribution

The Effects of Titanium Silicide Formation on Dopant Redistribution

1988 ◽  
Vol 135 (6) ◽  
pp. 1490-1504 ◽  
Author(s):  
C. M. Osburn ◽  
T. Brat ◽  
D. Sharma ◽  
D. Griffis ◽  
S. Corcoran ◽  
...  
Keyword(s):  
Titanium Silicide ◽  
Silicide Formation ◽  
Dopant Redistribution

Oxygen behavior during titanium silicide formation by rapid thermal annealing

1987 ◽  
Vol 62 (10) ◽  
pp. 4319-4321 ◽  
Author(s):  
R. Pantel ◽  
D. Levy ◽  
D. Nicolas ◽  
J. P. Ponpon
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicide Formation

scholarly journals Mechanical High-Temperature Properties and Damage Behavior of Coarse-Grained Alumina Refractory Metal Composites

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3927
Author(s):  
Anja Weidner ◽  
Yvonne Ranglack-Klemm ◽  
Tilo Zienert ◽  
Christos G. Aneziris ◽  
Horst Biermann
Keyword(s):  
Mechanical Properties ◽  
Compressive Strength ◽  
Refractory Metals ◽  
Coarse Grained ◽  
Damage Behavior ◽  
Niobium Oxides ◽  
Alumina Refractory ◽  
Increasing Temperature ◽  
New Generation ◽  
Refractory Composites

The present study provides the mechanical properties of a new generation of refractory composites based on coarse-grained Al2O3 ceramic and the refractory metals Nb and Ta. The materials were manufactured by refractory castable technology and subsequently sintered at 1600 °C for 4 h. The mechanical properties and the damage behavior of the coarse-grained refractory composites were investigated at high temperatures between 1300 and 1500 °C. The compressive strength is given as a function of temperature for materials with two different volume fractions of the refractory metals Ta and Nb. It is demonstrated that these refractory composites do not fail in a completely brittle manner in the studied temperature range. The compressive strength for all materials significantly decreases with increasing temperature. Failure occurred due to the formation of cracks along the ceramic/metal interfaces of the coarse-grained Al2O3 particles. In microstructural observations of sintered specimens, the formation of tantalates, as well as niobium oxides, were observed. The lower compressive strength of coarse-grained Nb-Al2O3 refractory composites compared to Ta-Al2O3 is probably attributed to the formation of niobium oxides. The formation of tantalates, however, seems to have no detrimental effect on compressive strength.

scholarly journals Titanium Silicide Formation in Presence of Oxygen

1992 ◽  
Vol 15 (1) ◽  
pp. 9-26 ◽  
Author(s):  
C. Nobili ◽  
F. Nava ◽  
G. Ottaviani ◽  
M. Costato ◽  
G. De Santi ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
Metal Oxidation ◽  
X Ray Diffraction ◽  
Amorphous Films ◽  
Titanium Disilicide ◽  
X Ray

In-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy and X-ray diffraction measurements have been performed in order to study the effects arising from the presence of oxygen in the annealing ambient on the integrity of amorphous films of TiSix, with x ranging from 1.45 to 2.1. Crystalisation occurs around 400 C. The presence of oxygen produces the formation of silicon and titanium oxide around 500 C. Critical analysis of the experimental results have indicated that metal oxidation is inhibited when an excess of silicon is present, which suggests the use of a sputtered Si coating cap as a medium capable of effectively decoupling the silicide film from oxygen. This avoids unwanted Ti oxidation even in heavily oxygen contaminated ambients up to the highest temperatures used for the formation of low resistivity titanium disilicide.

scholarly journals Design and Analysis of Heavily Doped n+ Pocket Asymmetrical Junction-Less Double Gate MOSFET for Biomedical Applications

2020 ◽  
Vol 10 (7) ◽  
pp. 2499 ◽  
Author(s):  
Namrata Mendiratta ◽  
Suman Lata Tripathi ◽  
Sanjeevikumar Padmanaban ◽  
Eklas Hossain
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Biomedical Applications ◽  
Field Effect Transistor ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Interface ◽  
Heavily Doped ◽  
Effect Transistor

The Complementary Metal-Oxide Semiconductor (CMOS) technology has evolved to a great extent and is being used for different applications like environmental, biomedical, radiofrequency and switching, etc. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based biosensors are used for detecting various enzymes, molecules, pathogens and antigens efficiently with a less time-consuming process involved in comparison to other options. Early-stage detection of disease is easily possible using Field-Effect Transistor (FET) based biosensors. In this paper, a steep subthreshold heavily doped n+ pocket asymmetrical junctionless MOSFET is designed for biomedical applications by introducing a nanogap cavity region at the gate-oxide interface. The nanogap cavity region is introduced in such a manner that it is sensitive to variation in biomolecules present in the cavity region. The analysis is based on dielectric modulation or changes due to variation in the bio-molecules present in the environment or the human body. The analysis of proposed asymmetrical junctionless MOSFET with nanogap cavity region is carried out with different dielectric materials and variations in cavity length and height inside the gate–oxide interface. Further, this device also showed significant variation for changes in different introduced charged particles or region materials, as simulated through a 2D visual Technology Computer-Aided Design (TCAD) device simulator.

Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon

MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 40-46 ◽  
Author(s):  
G.K. Celler ◽  
Alice E. White
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Integrated Circuit ◽  
High Dose ◽  
High Current ◽  
Silicide Formation ◽  
Semiconductor Substrate ◽  
Beam Currents ◽  
New Generation ◽  
High Dose Implantation

Experiments in ion implantation were first performed almost 40 years ago by nuclear physicists. More recently, ion implanters have become permanent fixtures in integrated circuit processing lines. Manufacture of the more complex integrated circuits may involve as many as 10 different ion implantation steps. Implantation is used primarily at f luences of 1012–1015 ions/cm2 to tailor the electrical properties of a semiconductor substrate, but causing only a small perturbation in the composition of the target (see the article by Seidel and Larson in this issue of the MRS Bulletin). Applications of implantation had been limited by the small beam currents that were available, but recently a new generation of high-current implanters has been developed. This high-current capability allows implanting concentrations up to three orders of magnitude higher than those required for doping—enough to create a compound.

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