Electrical Characterization of Ultra-Thin Oxides Grown on Silicon Surfaces Cleaned in Ultra-High Vacuum

1997 ◽  
Vol 477 ◽  
Author(s):  
C. L. Petersen ◽  
F. Grey
Keyword(s):  
High Vacuum ◽  
Electrical Characterization ◽  
Ultra High Vacuum ◽  
Silicon Surfaces ◽  
Rapid Fall ◽  
Conductance Increase ◽  
P Type ◽  
Bridge Position

ABSTRACTWe have investigated the oxidation of clean reconstructed silicon surfaces in-situ using a fourpoint probe technique. The measured conductance variations, on Si(111) and Si(100) surfaces as a function of oxygen exposure are markedly different. On Si(100) surfaces, the conductance displays a rapid fall during the first 100 L exposure to O2, followed by a slower steady decrease at higher oxygen exposures. This behavior is similar for both n-type arid p-type silicon. The conductance of Si(111) surfaces increases significantly at the onset of the oxidation. This conductance increase is found on both n-type and p-type Si(111) samples. We interpret this as being due to the molecular precursor which is known to form in the peroxy bridge position.

In-Situ Transmission Electron Microscopy of the Formation of Metal-Semiconductor Contacts

1990 ◽  
Vol 181 ◽  
Author(s):  
J. M. Gibson ◽  
D. Loretto ◽  
D. Cherns
Keyword(s):  
High Surface ◽  
High Vacuum ◽  
Volume Ratio ◽  
Ultra High Vacuum ◽  
Silicon Surfaces ◽  
Transmission Electron ◽  
Metal Silicides ◽  
Phase Sequence ◽  
Semiconductor Contacts

ABSTRACTWe have studied the formation of metal silicides in-situ in an ultra-high vacuum transmission electron microscope. Metals were deposited on in-situ cleaned, reconstructed silicon surfaces and annealed. For the metals Ni and Co, we find that the phase sequence in ultra-thin films is different from that seen in ≈1000 Å thick films, and attribute this to the high surface-to-volume ratio. In general reactions occur at room temperature, to form an epitaxial phase if possible. We report preliminary new results on the formation of Pd2Si.

scholarly journals An integrated ultra-high vacuum apparatus for growth and in situ characterization of complex materials

2020 ◽  
Vol 91 (8) ◽  
pp. 085109 ◽  
Author(s):  
G. Vinai ◽  
F. Motti ◽  
A. Yu. Petrov ◽  
V. Polewczyk ◽  
V. Bonanni ◽  
...  
Keyword(s):  
High Vacuum ◽  
Ultra High Vacuum ◽  
Complex Materials ◽  
In Situ Characterization ◽  
Vacuum Apparatus

Specimen heating stage with in-situ evaporator in UHV-STEM for the observation and characterization of monolayered superstructures

1983 ◽  
Vol 41 ◽  
pp. 308-309
Author(s):  
M. Ohtsuki ◽  
J.J. Schuler ◽  
A.V. Crewe ◽  
T. Ichinokawa
Keyword(s):  
Heavy Atom ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Solid Surfaces ◽  
Thin Specimen ◽  
Heating Stage ◽  
Specimen Holder ◽  
Better Than

In-situ evaporating experiments on solid surfaces become meaningful only when the evaporation takes place after the surface of the object is fully cleaned in ultra high vacuum (UHV). A specimen heating stage is usually used for the cleaning process.For the observation of single heavy atom superstructures at atomic resolution in UHV, we have constructed a new specimen heating stage equipped with an insitu evaporator. The device is built into the specimen ante-chamber of the high-resolution UHV-STEM as shown in Figures 1 and 2. The vacuum of the chamber has been tested at 4 × 10-10 torr. with two 20 ℓ/ sec ion pumps attached close to the chamber. The vacuum of the STEM column is better than 1 × 10-10 torr. The heating stage is built into the specimen holder so that direct heating of the specimen is possible. In the detail shown in Figure 2, a thin specimen is mounted between two supporting grids which are then fastened together by two semi-circular tantalum clips. These clips are also used as contacts which carry the current to heat the specimen directly.

In Situ REM Observation of Step Dynamics on Silicon Surfaces

1997 ◽  
Vol 3 (S2) ◽  
pp. 581-582
Author(s):  
AV. Latyshev ◽  
K. Yagi
Keyword(s):  
High Vacuum ◽  
Structural Evolution ◽  
Ultra High Vacuum ◽  
Silicon Surfaces ◽  
Clear Understanding ◽  
Atomic Step ◽  
Surface Evolution ◽  
Step Motion ◽  
Morphological Transformations

Clear understanding of the structural and morphological transformations on the crystal surfaces can only be extracted from considerations of the dynamical properties of surface evolution. So ultra high vacuum reflection electron microscopy (UHV REM) has been applied to in situ studies of step behaviors on the silicon surfaces during various treatments. Dependence of the surface morphology on the number of parameters is reviewed with new results. Special attention is paid to influence of the electromigration phenomena and strain fields on structural evolution of the surfaces during sublimation, phase transition and epitaxial growth. The stability of the atomic step distributions is discussed in the frame of kinetical morphological transitions on silicon surfaces during DC heating of studied crystal [1].The step motion during sublimation shows a strong influence of stress fields on the step configurations [2]. The importance of surface stress is obvious because in equilibrium conditions there is a residual stress on the surface due to existence of broken bonds.

A high-vacuum deposition system for in situ and real-time electrical characterization of organic thin-film transistors

2011 ◽  
Vol 82 (2) ◽  
pp. 025110 ◽  
Author(s):  
Santiago David Quiroga ◽  
Arian Shehu ◽  
Cristiano Albonetti ◽  
Mauro Murgia ◽  
Pablo Stoliar ◽  
...  
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Thin Film Transistors ◽  
High Vacuum ◽  
Electrical Characterization ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Vacuum Deposition

Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

1970 ◽  
Vol 28 ◽  
pp. 456-457
Author(s):  
L. E. Murr ◽  
G. Wong
Keyword(s):  
Single Crystal ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Rate ◽  
Flash Evaporation ◽  
Optimum Load ◽  
Single Crystal Films ◽  
Crystal Films ◽  
A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

Sign in / Sign up

Export Citation Format

Share Document