Surface Characteristics, Etching Behaviors and Chemicalmechanical Polishing of Aluminum Alloy thin Films

1997 ◽  
Vol 477 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Jun Wu ◽  
Yee-Shyi Chang

ABSTRACTEtching behaviors of various Al alloy thin films in H2O2-based acidic etchants are investigated in this study. The pH and H2O2 content in the etchant are varied in order to simulate the case where Al thin films are subject to chemical-mechanical polishing (CMP) using slurries of different compositions. Corrosion current and thickness of the native oxide on pure-Al, AI-1%Si, Al-0.5%Cu, AI-1%Si-0.5%Cu, and AI-1%Cu thin films are determined from Tafel and ESCA analyses respectively. Comparisons between etch rate and CMP polish rate data suggest that Al-CMP removal process depends strongly on the chemical reactions by the oxidizer (slurry). Mechanical abrasion by the abrasive particles plays only an auxiliary role during Al CMP. In addition, alloy composition (% Si and % Cu) influence both etching and polishing behaviors to a great extent. The underlying mechanisms for etching and polishing are discussed.

1985 ◽  
Vol 54 ◽  
Author(s):  
Albertus G. Dirks ◽  
Tien Tien ◽  
Janet M. Towner

ABSTRACTThe microstructure and properties of thin films depends strongly upon the alloy composition. A study was made of the metallurgical aspects of homogeneous Al alloy films, particularly the binary Al-Ti and the ternary Al-Ti-Si systems. Electrical resistivity, grain size morphology, second phase formation and electromigration have been studied as a function of the alloy composition and its heat treatment.


2005 ◽  
Vol 894 ◽  
Author(s):  
Junpei Sakurai ◽  
Seiichi Hata ◽  
Ryusuke Yamauchi ◽  
Akira Shimokohbe

AbstractThis paper presents the characteristics of Mo-based (Mo-Zr based) amorphous alloys exhibiting a high crystallization temperature. In order to investigate the alloy composition showing an amorphous state in the Mo-Zr-X (X=Si and Al) alloy system, thin film libraries were prepared at first by combinatorial arc plasma deposition (CAPD). The composition region corresponding to the amorphous state was identified in the libraries with X-ray diffraction. On the basis of the alloy composition and phase distribution of the thin film libraries, additional amorphous Mo-Zr-Si and Mo-Zr-Al thin films were prepared by a carousel sputtering system. The crystallization temperature Tc of the amorphous Mo50Zr(50-x)Six thin films exceeded 1073 K. However, the Mo-Zr-Si thin films were so brittle that they could not be subjected to tensile testing. In the Mo-Zr-Al thin films, Tc of the Mo-rich MoxZr(90-x)Al10 and MoxZr(76-x)Al24 thin films exceeded 973 K. Although the toughness of Mo-based amorphous alloy thin films could be improved slightly by adding Al, the amorphous Mo-Zr-Al thin films were also brittle.


2021 ◽  
Vol 22 (9) ◽  
pp. 4706
Author(s):  
Shun-Yi Jian ◽  
Salim Levent Aktug ◽  
Hsuan-Ti Huang ◽  
Cheng-Jung Ho ◽  
Sung-Yen Lin ◽  
...  

Micro arc oxidation (MAO) is a prominent surface treatment to form bioceramic coating layers with beneficial physical, chemical, and biological properties on the metal substrates for biomaterial applications. In this study, MAO treatment has been performed to modify the surface characteristics of AZ31 Mg alloy to enhance the biocompatibility and corrosion resistance for implant applications by using an electrolytic mixture of Ca3(PO4)2 and C10H16N2O8 (EDTA) in the solutions. For this purpose, the calcium phosphate (Ca-P) containing thin film was successfully fabricated on the surface of the implant material. After in-vivo implantation into the rabbit bone for four weeks, the apparent growth of soft tissues and bone healing effects have been documented. The morphology, microstructure, chemical composition, and phase structures of the coating were identified by SEM, XPS, and XRD. The corrosion resistance of the coating was analyzed by polarization and salt spray test. The coatings consist of Ca-P compounds continuously have proliferation activity and show better corrosion resistance and lower roughness in comparison to mere MAO coated AZ31. The corrosion current density decreased to approximately 2.81 × 10−7 A/cm2 and roughness was reduced to 0.622 μm. Thus, based on the results, it was anticipated that the development of degradable materials and implants would be feasible using this method. This study aims to fabricate MAO coatings for orthopedic magnesium implants that can enhance bioactivity, biocompatibility, and prevent additional surgery and implant-related infections to be used in clinical applications.


Author(s):  
Jihyeon Lee ◽  
Donghyun Kim ◽  
Juyun Park ◽  
Jin-Woo Oh ◽  
Yong-Cheol Kang

2004 ◽  
Vol 76 (1-4) ◽  
pp. 272-278 ◽  
Author(s):  
R. Modlinski ◽  
A. Witvrouw ◽  
P. Ratchev ◽  
R. Puers ◽  
J.M.J. den Toonder ◽  
...  
Keyword(s):  

2004 ◽  
Vol 53 (12) ◽  
pp. 4398
Author(s):  
Qi Hong- Ji ◽  
Yi Kui ◽  
He Hong- Bo ◽  
Shao Jian- Da

2020 ◽  
Vol 17 (35) ◽  
pp. 164-173
Author(s):  
Muslim Idan HAMIL ◽  
Mohammed K. KHALAF ◽  
Mundher AL-SHAKBAN

In this report, TiN nanocrystalline thin films were deposited on glass and Ti-6Al-4V substrates using a DC-magnetron sputtering technique. The TiN films were sputtered using a pure Ti target (99.9%) with 40W of power in Ar/N2 gas mixture atmosphere. The structure of the TiN films was characterized by X-Ray diffraction, as prepared films exhibited a (200) preferred orientation, while film annealed at 500 °C shows the (111), (200) and (311). Polycrystalline, cubic, (111)-orientated TiN films were produced by annealing temperature of 500 °C. The effect of deposited temperature on the microstructural morphologies of the thin films was studied by Field Emission Scanning Electron Microscope (FESEM). The particle size of the sputtered TiN films ranged from 50 to 70 nm and was strongly influenced by annealing temperatures, the morphology of the films deposited before and after annealing has a characteristic agglomeration of particles. Potentiodynamic polarization analysis of the TiN films confirms the inverse relationship between polarization resistance and corrosion current. The biocorrosion measurements for TiN films deposited on the Ti-6Al-4V substrate in 3.5% NaCl solution have also been obtained. Clear improvement in the corrosion resistance was observed rather than for untreated, especially for thermally annealed (500 oC) TiN/Ti-6Al-4V samples. The corrosion rate was 0.1458 mm/y for the uncoated sample, while 2.68510-4 mm/y for TiN/Ti-6Al-4V in samples after annealing. The average corrosion potential calculated was - 0.117 V. The results confirmed that coated alloys with 500 °C thermally treated exhibited a better electrochemical behavior compare with uncoated and non-thermally treated alloys possibly due to the better cohesion degree of the coatings.


2007 ◽  
Vol 546-549 ◽  
pp. 1111-1116 ◽  
Author(s):  
Ming An Chen ◽  
Xuan Xie ◽  
Guo Fu Xu ◽  
Hui Zhong Li ◽  
Xin Ming Zhang

2024-T6 Al alloy sheet s were modified by bis-[triethoxysilylpropyl] tetrasulfide (BTESPT) silane film to improve the corrosion resistance. Fourier-Transform Reflection Absorption (FTIR-RA) spectroscopy was used for structural characterization of BTESPT silane film formed on surface of the sheet. Potentiodynamic polarization and immersion test in 3.5% NaCl solution were used for evaluating the corrosion performances of the silane film. The results showed that the film formed after curing at 120 °C for 40 min was cross-linked through Si-O-Si and that it was covered on the entire surface of the sheet. The content of elements S and Si on the Al2CuMg particles is a little higher that of on the matrix. The strong peak at 1032 cm-1 indicated that the film was linked to the sheet by Si-O-Al. Compared to the untreated case, the corrosion current density of the sheet treated with the silane film was reduced by close to 2 orders. Treatment of BTESPT silane can provide about 670 h protection of corrosion for the sheet in 3.5% NaCl water solution.


2005 ◽  
Vol 862 ◽  
Author(s):  
R. J. Soukup ◽  
N. J. Ianno ◽  
J. S. Schrader ◽  
V. L. Dalal

AbstractExperimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented. The mostimportant contribution of this work is that it shows that by using non-equilibrium growth conditions resulting from the hollow cathode technique, one can grow Group IV materials which cannot otherwise be grown using normal CVD or MBE processes. The sputtering is accomplished by igniting a dc plasma in the Ar and H2 gases which are fed through Ge and C nozzles.The GeC films are grown on etched Si (100), on Si with the native oxide and on glass. The films grown on glass were quite disordered, but the films grown on both types of Si substrates were very ordered in nature. This order has been characterized using Xray diffraction (XRD) and Raman spectroscopy.Films with as much as 8% C have been deposited. In order to produce useful GexC1-x films, the C must bond to the Ge at lattice sites. Evidence of this desired GeC bond has been seen using Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and XRD.


2021 ◽  
Vol 14 (5) ◽  
pp. 419-424

Abstract: The most prominent and utilizable platinum-coated copper Oxide nanostructured thin films are prepared using the SILAR method. Their structural properties have been studied using X-ray diffraction (XRD) and Raman spectroscopy. XRD pattern reveals the phase purity and crystallinity of CuO nanostructures. The average grain size estimated from XRD gives diameters in the range of 14 - 27 nm. Raman spectra explain the structural information of CuO and Pt/CuO nanostructured thin films, in which the peaks observed at 328 cm-1, 609.32 cm-1 and 1141.77 cm-1 are the different phonon modes of CuO. The peak at 2136 cm-1 provides strong evidence for the formation of platinum on CuO nanostructures. The SEM micrograph confirms the floral morphology, which is composed of nano petals. From the observed morphology, it is observed that the deposited thin films such as CuO and Pt/CuO will give interesting applications to our society by being self-cleaning agents, photocatalysts, semiconductor devices, optical fibers, … etc. Keywords: CuO, Pt/CuO, Structural analysis, SILAR, Crystallinity.


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