Thermal Stability of a-C:F,H Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

1997 ◽  
Vol 476 ◽  
Author(s):  
Jeremy A. Theil ◽  
Francoise Mertz ◽  
Micah Yairi ◽  
Karen Seaward ◽  
Gary Ray ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Electron Cyclotron Resonance ◽  
Infrared Absorption Spectrum ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Good Thermal Stability ◽  
Ecr Plasma ◽  
Dielectric Constant And Loss ◽  
Good Guide

AbstractAmorphous carbon films grown with fluorohydrocarbons can be grown to have dielectric constant values around 2.0. The behavior of these films when subjected to thermal excursion is studied. We have investigated material deposited in an ECR plasma, and find that the F:H ratio of the gas mixture is a good guide to material properties. Films deposited at 5°C were placed in a vacuum chamber at 400°C as long as 60 minutes. The film thickness, dielectric constant, and infrared absorption spectrum change with the F:H ratio of the incoming gas and thermal cycling. It was found that the dielectric constant and loss tangent decrease upon heating and that there is an apparent increase in C=C groups. As expected, as the F:H ratio increases, the dielectric constant and thermal stability decrease. Good thermal stability is shown for F:H ratios of 1.5, which result in films with a dielectric constant of ∼2.4 after heating.

Low Temperature Fabrication of (Ba, Sr)TiO3 Thin Films by ECR Plasma CVD

1996 ◽  
Vol 433 ◽  
Author(s):  
Y. Kato ◽  
H. Yabuta ◽  
S. Sone ◽  
H. Yamaguchi ◽  
T. Iizuka ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Mass Transport ◽  
Electron Cyclotron Resonance ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Equivalent Thickness ◽  
Plasma Chemical Vapor Deposition ◽  
Ecr Plasma ◽  
Metal Organic

AbstractPhysical and electrical properties are investigated for (Ba, Sr)TiO3 (BST) films prepared by electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) at relatively low temperatures, between 450 °C and 500 °C. The crystallinity of BST, estimated by X-ray diffraction and from the grain size, is greatly improved when the temperature is raised from 450 °C to 500 °C. Also better crystallinity is obtained for films grown at a deposition rate of 1.1 nn/min than at 2.7 nm/min. The mass transport rates of metal organic sources under our deposition conditions are estimated. The BST film composition is precisely controlled using the results of the investigation on mass transport. At near stoichiometric composition, i.e., (Ba+Sr)/Ti=0.97, and Ba/(Ba+Sr)=0.4, the films grown at 500 °C are found to have the largest dielectric constant, measured using flat capacitors with Pt bottom electrodes. A dielectric constant of 160 is obtained for 27 nm thick films grown at 500 °C and at 1.1 nm/min, without post-deposition annealing. These films exhibit the smallest SiO2 equivalent thickness of 0.65 nm and a leakage current density of 4.6x10−7 A/cm2 at plus IV.

Deposition and Etching of Amorphous Carbon Films Prepared by ECR-Plasma-Enhanced Benzene Chemical Vapor Deposition

1998 ◽  
Vol 555 ◽  
Author(s):  
Xiao-Hua Chen ◽  
Laren M. Tolbert ◽  
Z. Y. Ning ◽  
Dennis W. Hess
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Cyclotron Resonance ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Benzene Vapor ◽  
Plasma Etch ◽  
Ecr Plasma ◽  
Amorphous Hydrogenated Carbon

AbstractAmorphous hydrogenated carbon thin films have been deposited from benzene vapor in a microwave electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. Plasma enhanced dissociation and reaction of benzene were monitored by mass spectrometry. Deposited films were characterized by Fourier transform infrared spectroscopy and fluorescence spectroscopy. The effect of the deposition rate on the film density and plasma etch resistance was also studied. The etch resistance of deposited carbon film is higher than the conventional resist Novolac.

Effect of RF Negative Bias on the Structure and Performance of Diamond-Like Carbon Films in ECR Plasma

2013 ◽  
Vol 423-426 ◽  
pp. 756-761
Author(s):  
Li Jun Sang ◽  
Qiang Chen ◽  
Zhong Wei Liu ◽  
Zheng Duo Wang
Keyword(s):  
Friction Coefficient ◽  
Electron Cyclotron Resonance ◽  
Crystalline Silicon ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Negative Bias ◽  
Film Property ◽  
Ecr Plasma ◽  
Peak Intensity ◽  
Stretching Vibration

Diamond-like carbon films (DLC) were deposited on single crystalline silicon surface under different RF negative bias in microwave electron cyclotron resonance (ECR) plasma source. The chemical structure and morphology were characterized by Fourier transformation infrared spectroscopy (FTIR) and atomic force microscopy (AFM). The friction coefficient of films was measured to examine the film property later. The results show that the smooth and compact deposited films were typical hydrogenated diamond-like carbon with CHn stretching vibration in 2800-3000cm-1. It is noticed that with the increase of RF bias on the substrate the peak intensity for C-H stretching vibration in spectrum between 2800cm-1~3000cm-1 increased at the beginning and then decreased, which caused the friction coefficient of the film being smaller and then larger in reverse. In 50W RF biased power one can obtain the maximum-CHn peak intensity and the minimum friction coefficient.

Preparation And Properties Of Fluorinated Amorphous Carbon Thin Films By Plasma Enhanced Chemical Vapor Deposition

1995 ◽  
Vol 381 ◽  
Author(s):  
Kazuhiko Endo ◽  
Toru Tatsumi
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Parallel Plate ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Source Power ◽  
Amorphous Carbon Films

AbstractFluorinated amorphous carbon films are proposed as low dielectric constant interlayer dielectrics for ULSI circuits. The films are deposited by plasma enhanced chemical vapor deposition with CH4, CF4 and C2F6 in a parallel-plate rf (13.56 MHz) reactor and a helicon wave reactor. In a parallel-plate reactor, the dielectric constant of the amorphous carbon films deposited with CH4 increases with increase in rf power. Addition of CF4 to CH4 reduces the dielectric constant to 2.1 and raises the deposition rate. However etching reaction occurs with high CF4/CH4 ratios. No film grows with only CF4. XPS measurement reveals that the F atoms are introduced into the amorphous carbon films. Helicon reactor has higher plasma density and is expected to achieve higher deposition rate for productive use. In this reactor, fluorinated amorphous carbon films without hydrogen content can be obtained with only CF4 and C2F6 gases. The growth rate of the films reaches 0.3 μ/min with C2F6 and 0.15 μ/min with CF4 at a source power of 2 kW and a gas flow rate of 100 sccm. With heating up to 300°C in a vacuum for 1 hour, the thickness of the films deposited with C2F6 does not shrink while that of films with CF4 shrinks.

Characterization and Tribological Properties of Nanostructured Copper/Carbon Composite Films Prepared by Microwave Plasma-Assisted Dual Deposition Processes

2002 ◽  
Vol 750 ◽  
Author(s):  
François Thiery ◽  
Yves Pauleau ◽  
Jacques Pelletier
Keyword(s):  
Amorphous Carbon ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Composite Films ◽  
Chemical Vapor ◽  
Carbon Matrix ◽  
Carbon Composite ◽  
Carbon Films ◽  
Radius Of Curvature

ABSTRACTNanocrystalline copper/hydrogenated amorphous carbon films have been deposited on Si substrates at the floating potential using a distributed electron cyclotron resonance microwave plasma reactor. In this deposition technique, the microwave plasma-enhanced chemical vapor deposition process of carbon from argon-methane or argon-acetylene mixtures of various compositions was associated with the sputter deposition of copper from a copper target. The total pressure was fixed at 0.13 Pa. For deposition, the substrates mounted on a water-cooled substrate holder were maintained at ambient temperature. The composition of films determined by Rutherford backscattering spectroscopy, energy recoil detection analyses and nuclear reaction analyses was investigated as a function of the gas phase composition. The structure of films was identified by X-ray diffraction (XRD) techniques and the size of copper crystallites incorporated in the amorphous carbon matrix was deduced from XRD data. The magnitude of residual stresses developed in these films was calculated from the radius of curvature of film/substrate samples determined by profilometry. The residual stress values were found to be nearly independent on the composition of films and deposition parameters.

Deposition of Diamond using an Electron Cyclotron Resonance Plasma System

1994 ◽  
Vol 339 ◽  
Author(s):  
Donald R. Gilbert ◽  
Rajiv Singh ◽  
W. Brock Alexander ◽  
Dong Gu Lee ◽  
Patrick Doering
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Plasma System ◽  
Electron Cyclotron Resonance Plasma ◽  
Ecr Plasma ◽  
Low Pressures ◽  
Substrate Temperatures ◽  
Resonance Plasma

ABSTRACTWe have used an electron cyclotron resonance plasma system to perform chemical vapor deposition experiments on single-crystal, (110) oriented diamond substrates. The depositions were carried out at 0.060 Torr using mixtures of methanol in hydrogen. Substrate temperatures were varied from approximately 620 to 800 °C The film morphology was examined using SEM and microstructural phase determination was attempted using micro-Raman spectroscopy. Based on the results of these experiments, we have determined general trends for the characteristics of films deposited on diamond from the ECR plasma at low pressures and temperatures.

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