Temperature Dependence of Strong Exchange Coupling in Ferrite Heterostructures

1997 ◽  
Vol 475 ◽  
Author(s):  
Y. Suzuki ◽  
R.B. Van Dover ◽  
R.J. Felder
Keyword(s):  
Thin Film ◽  
Curie Temperature ◽  
Temperature Dependence ◽  
Coercive Field ◽  
Exchange Coupling ◽  
Spinel Structure ◽  
Room Temperature ◽  
Blocking Temperature ◽  
Soft Layer ◽  
Strong Exchange

ABSTRACTSingle crystalline spinel structure ferrite thin film bilayers exhibit nearly ideal exchange coupling at room temperature. In these bilayers, the blocking temperature is only limited by the Curie temperature of the (Mn,Zn)Fe2O4. Up to the Curie temperature of the soft (Mn,Zn)Fe2O4 layer, the magnetization loops indicate that exchange anisotropy dominates the magnetization of the soft layer up to magnetic fields on the order of the coercive field of the hard CoFe2O4layer.

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

Pyroelectric Properties of the Plt(10) Thin Film on the P-Doped Poly Silicon

1996 ◽  
Vol 433 ◽  
Author(s):  
Seong Jun Kang ◽  
Yung Sup Yoon ◽  
Dong Il Kim
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Curie Temperature ◽  
Room Temperature ◽  
Sol Gel ◽  
Pyroelectric Coefficient ◽  
Pyroelectric Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Poly Silicon

AbstractWe have studied the pyroelectric properties of the PLT(10) thin film deposited on a p-doped poly-Si electrode by using the sol-gel method. Measurement of the dielectric constant as a function of temperature shows the typical characteristics of a ferroelectric. The dielectric constant reaches a maximum at 295°C, which can be thought of as the Curie temperature. The PLT(10) thin film on p-doped poly-Si fabricated in this research shows excellent pyroelectric properties. The pyroelectric coefficient and the fiqures of merit, Fv and FD at room temperature are measured as 5.76 × 10−8 C/cm2 °C, 1.17 × 10−10C-cm/J and 0.93 × 10−8C-cm/J, respectively.

Temperature dependence of characteristics of SrS : Cu(Ag) thin-film electroluminescent devices beyond room temperature

2000 ◽  
Vol 216 (1-4) ◽  
pp. 245-248
Author(s):  
N.A Vlasenko ◽  
Ya.F Kononets ◽  
Yu.V Kopytko ◽  
E Soininen ◽  
S.-S Sun
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Electroluminescent Devices

TRANSITITON FROM A MAGNETIC TO A NONMAGNETIC STATE AS A FUNCTION OF PRESSURE IN MnSi

1993 ◽  
Vol 07 (01n03) ◽  
pp. 887-890 ◽  
Author(s):  
C. PFLEIDERER ◽  
R.H. FRIEND ◽  
G.G. LONZARICH ◽  
N.R. BERNHOEFT ◽  
J. FLOUQUET
Keyword(s):  
Low Temperature ◽  
Curie Temperature ◽  
Temperature Dependence ◽  
Fermi Liquid ◽  
Critical Pressure ◽  
Room Temperature ◽  
Temperature Form ◽  
Marginal Fermi Liquid

We report a study of the temperature dependence of the resistivity ρ(T) of MnSi over the range 20mK to room temperature at hydrostatic pressures of up to 20 kbar. The low temperature form of ρ(T) near the critical pressure Pc=15.5 kbar where the Curie temperature appears to vanish is interpreted in terms of a model of a Marginal Fermi Liquid.

Temperature Dependence of TaSiN Thin Film Resistivity from Room Temperature to 900°C

2001 ◽  
Vol 40 (Part 2, No. 6B) ◽  
pp. L603-L605 ◽  
Author(s):  
Munenori Oizumi ◽  
Katsuhiro Aoki ◽  
Yukio Fukuda
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Film Resistivity

Room Temperature Current Suppression on Magnetic Tunnel Junction Based Molecular Spintronics Devices

2013 ◽  
Vol 1507 ◽  
Author(s):  
Pawan Tyagi
Keyword(s):  
Tunnel Junction ◽  
Exchange Coupling ◽  
Room Temperature ◽  
Spin Transport ◽  
Magnetic Tunnel Junction ◽  
Test Bed ◽  
Force Microscopy ◽  
Molecular Spintronics ◽  
Ferromagnetic Electrodes ◽  
Strong Exchange

ABSTRACTMolecular conduction channels between two ferromagnetic electrodes can produce strong exchange coupling and dramatic effect on the spin transport, thus enabling the realization of novel logic and memory devices. To realize such device, we produced Multilayer Edge Molecular Spintronics Devices (MEMSDs) by bridging the organometallic molecular clusters (OMCs) across a ∼2 nm thick insulator of a magnetic tunnel junction (MTJ), along its exposed side edges. These MEMSDs exhibited unprecedented increase in exchange coupling between ferromagnetic films and dramatic changes in the spin transport. This paper focuses on the dramatic current suppression phenomenon exhibited by MEMSDs at room temperature. In the event of current suppression, the effective MEMESDs’ current reduced by as much as six orders in magnitude as compared to the leakage current level of a MTJ test bed. Current suppression phenomenon was found to be associated with the equally dramatic changes in the MTJ test beds due to OMCs. Role of OMC in changing MTJ test bed properties was determined by the three different types of magnetic characterizations: SQUID Magnetometer, Ferromagnetic Resonance, and Magnetic Force Microscopy. Observation of current suppression by independent research groups and supporting studies on similar systems will be crucially important to unequivocally establish the utility of MEMSD approach.

Temperature Dependence of Stress Relaxation at the Copper/Polyimide Interface

1986 ◽  
Vol 79 ◽  
Author(s):  
S. T. Chen ◽  
C. H. Yang ◽  
H. M. Tong ◽  
P. S. Ho
Keyword(s):  
Thin Film ◽  
Stress Relaxation ◽  
Thermal Cycling ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Copper Film ◽  
Interfacial Stress ◽  
Film Stress ◽  
Cross Sectional ◽  
Cu Film

AbstractA Cu/polyimide thin film couple prepared on a thin quartz reed has been used to study interfacial stress relaxation during thermal cycling between room temperature and 400 °C. The polyimide thickness varies from 0 (no polyimide at all) to 10.5μm while the Cu thickness was fixed at 0.53μm. The average copper film stress has been calculated from the curvature of the quartz reed. The information clarifies the relation between the polyimide thickness and the average Cu film stress. The Cu/polyimide interfacial morphology after thermal cycling has also been examined using the cross sectional TEM technique. The results suggest that the interfacial stress is partially released through the deformation of polyimide near the Cu/polyimide interface.

NdFeB Magnets with Improved Temperature Characteristics

1987 ◽  
Vol 96 ◽  
Author(s):  
B. M. Ma
Keyword(s):  
Magnetic Properties ◽  
Curie Temperature ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Temperature Coefficients ◽  
System A ◽  
Rate Of Increase ◽  
Intrinsic Coercivity ◽  
Molybdenum Addition

ABSTRACTThe temperature dependence of magnetic properties for NdFeCoB alloys were investigated. It is well known that dysprosium substitution for neodymium increases the intrinsic coercivity. Aluminum also improves the intrinsic coercivity, Hci, at room temperature but impairs the Curie temperature and the intrinsic coercivity at elevated temperatures. The rate of increase of the Hci with increasing dysprosium in the NdFeCoB system is less than when dysprosium is added to the NdFeB system. A combination of aluminum and dysprosium is more effective than aluminum alone in raising Hci. Molybdenum addition into the NdDyFeCoB alloy was found to reduce the temperature coefficients of Br and Hci. Temperature coefficients of Br and Hci obtained on a Nd10Dy5Fe67Co10Mo1Al1B6 alloy are -0.07 %/°C and -0.4 %/°C respectively.

Preparation of (Ba1-x, Srx)TiO3 Thin Films on Glazed Alumina Substrate and Improvement of Temperature Dependence of Dielectric Properties

2009 ◽  
Vol 421-422 ◽  
pp. 127-130 ◽  
Author(s):  
Takashi Nozaka ◽  
Yoji Mizutani ◽  
Gun Bhakdisongkhram ◽  
Yuta Kawakami ◽  
Masahiro Echizen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Property ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Change Rate ◽  
Operation Temperature ◽  
Bst Thin Film ◽  
Composition Ratios

In this study, (Ba1-x,Srx)TiO3 thin films of various composition ratios were deposited on glazed Al2O3 substrates by the CSD method, and the temperature dependence of the dielectric property was analyzed. The dielectric property of the BST (80/20) thin film annealed at C was highly tunable, and the temperature dependence of the dielectric constant was stabilized at around room temperature. However, this BST (80/20) thin film exhibited intense ferroelectricity. Its tan intensified to 0.0511 in the high-frequency range (1 MHz). After the BST thin film was annealed at 600C, the grain size of the BST thin film was reduced to 40 nm and the ferroelectricity was alleviated. The dielectric constant, tan, and tunability of the BST thin film at 100 kHz were 158, 0.0170, and 39.6 (214 kV/cm, 6.0 V), respectively. The change rate of the dielectric constant, which indicates its temperature dependence, was ±7 or less in the range of -55 to 85C. Therefore, this BST thin film was considered to guarantee a wide operation temperature range for microwave tunable devices.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

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