Temperature Dependence of Stress Relaxation at the Copper/Polyimide Interface

1986 ◽  
Vol 79 ◽  
Author(s):  
S. T. Chen ◽  
C. H. Yang ◽  
H. M. Tong ◽  
P. S. Ho
Keyword(s):  
Thin Film ◽  
Stress Relaxation ◽  
Thermal Cycling ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Copper Film ◽  
Interfacial Stress ◽  
Film Stress ◽  
Cross Sectional ◽  
Cu Film

AbstractA Cu/polyimide thin film couple prepared on a thin quartz reed has been used to study interfacial stress relaxation during thermal cycling between room temperature and 400 °C. The polyimide thickness varies from 0 (no polyimide at all) to 10.5μm while the Cu thickness was fixed at 0.53μm. The average copper film stress has been calculated from the curvature of the quartz reed. The information clarifies the relation between the polyimide thickness and the average Cu film stress. The Cu/polyimide interfacial morphology after thermal cycling has also been examined using the cross sectional TEM technique. The results suggest that the interfacial stress is partially released through the deformation of polyimide near the Cu/polyimide interface.

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

Thermomechanical Stresses in Copper Films at Elevated Temperature

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000129-000135 ◽  
Author(s):  
Martin Lederer ◽  
Javad Zarbakhsh ◽  
Rui Huang ◽  
Thomas Detzel ◽  
Brigitte Weiss
Keyword(s):  
Elevated Temperature ◽  
Thermal Cycling ◽  
Copper Film ◽  
Film Stress ◽  
Elastic Response ◽  
Copper Films ◽  
Thermomechanical Stress ◽  
Wafer Curvature ◽  
Electronic Parts ◽  
Stoney Formula

Thermomechanical stresses in metallic films are a root cause for material fatigue which limits the lifetime of electronic devices. Since the yield stress of metals is temperature dependent, plastic deformations during thermal cycling are increased at elevated temperature. This effect reduces the reliability of electronic parts. In order to investigate this problem, a 20μm thick copper film was deposited on a silicon wafer. After annealing at 400°C, the sample was exposed to thermal cycles in the temperature range between room temperature and 600°C. The different values for the CTE of copper and silicon lead to a curvature of the sample. The wafer curvature was measured by a multi-laser beam method. On the basis of the experimental results, a new theoretical model was developed, which describes the stress evolution in the film during thermal cycling. In this investigation, the relation between wafer curvature and film stress is calculated by analogy to a model by Freund [1] which is an improvement to the well known Stoney formula. In addition to the elastic response, the new model considers plasticity of the copper film as well as temperature dependence of creep. It is demonstrated that the model can well describe the experiment and thus thermomechanical stress in copper films.

Temperature dependence of characteristics of SrS : Cu(Ag) thin-film electroluminescent devices beyond room temperature

2000 ◽  
Vol 216 (1-4) ◽  
pp. 245-248
Author(s):  
N.A Vlasenko ◽  
Ya.F Kononets ◽  
Yu.V Kopytko ◽  
E Soininen ◽  
S.-S Sun
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Electroluminescent Devices

The Effect of Ultra-Low Temperature Treatments on the Stress in Aluminum Metallization on Silicon Wafers

1994 ◽  
Vol 338 ◽  
Author(s):  
Frank Baldwin ◽  
Paul H. Holloway ◽  
Mark Bordelon ◽  
Thomas R. Watkins
Keyword(s):  
Stress Relaxation ◽  
Low Temperature ◽  
Thermal Cycling ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Silicon Wafers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Aluminum Metallization ◽  
Low Temperature Treatments

ABSTRACTThe stresses in Al-0.75w%Si-0.5w%Cu unpatterned metallization on silicon wafers have been measured using substrate curvature and x-ray diffraction techniques after quenching in liquid nitrogen. Stresses were measured with and without phospho-silicate glass overlayers and SiO2 underlayers, and thermal cycling followed by relaxation at room temperature. It was found that cooling the substrates to 77 K and warming to room temperature caused the metallization stress to go from tensile to compressive. Subsequent heating of the substrates to above ∼70°C followed by cooling to room temperature caused the stress to become tensile. Both compressive and tensile stresses were found to relax at room temperature with a time constant of 2.3 ± 0.2 hours. The magnitude of stress relaxation was a function of temperature, being about 20 MPa after heating to 240°C. The metallization exhibited both compressive and tensile flow stresses of ∼100 MPa near room temperature.

Temperature Dependence of Strong Exchange Coupling in Ferrite Heterostructures

1997 ◽  
Vol 475 ◽  
Author(s):  
Y. Suzuki ◽  
R.B. Van Dover ◽  
R.J. Felder
Keyword(s):  
Thin Film ◽  
Curie Temperature ◽  
Temperature Dependence ◽  
Coercive Field ◽  
Exchange Coupling ◽  
Spinel Structure ◽  
Room Temperature ◽  
Blocking Temperature ◽  
Soft Layer ◽  
Strong Exchange

ABSTRACTSingle crystalline spinel structure ferrite thin film bilayers exhibit nearly ideal exchange coupling at room temperature. In these bilayers, the blocking temperature is only limited by the Curie temperature of the (Mn,Zn)Fe2O4. Up to the Curie temperature of the soft (Mn,Zn)Fe2O4 layer, the magnetization loops indicate that exchange anisotropy dominates the magnetization of the soft layer up to magnetic fields on the order of the coercive field of the hard CoFe2O4layer.

Thermomechanical Stresses in Copper Films at Elevated Temperature

2010 ◽  
Vol 7 (2) ◽  
pp. 99-104 ◽  
Author(s):  
Martin Lederer ◽  
Javad Zarbakhsh ◽  
Rui Huang ◽  
Thomas Detzel ◽  
Brigitte Weiss
Keyword(s):  
Elevated Temperature ◽  
Thermal Cycling ◽  
Coefficient Of Thermal Expansion ◽  
Copper Film ◽  
Film Stress ◽  
Elastic Response ◽  
Copper Films ◽  
Thermomechanical Stress ◽  
Wafer Curvature ◽  
Stoney Formula

Thermomechanical stresses in metallic films are a root cause for material fatigue which limits the lifetime of electronic devices. Since the yield stress of metals is temperature dependent, plastic deformations during thermal cycling are increased at elevated temperature. This effect reduces the reliability of electronic parts. In order to investigate this problem, a 20 μm thick copper film was deposited on a silicon wafer. After annealing at 400°C, the sample was exposed to thermal cycles in the temperature range between room temperature and 600°C. The different values for the coefficient of thermal expansion of copper and silicon lead to a curvature of the sample. The wafer curvature was measured by a multilaser beam method. On the basis of the experimental results, a new theoretical model was developed that describes the stress evolution in the film during thermal cycling. In this investigation, the relation between wafer curvature and film stress is calculated by analogy to a model by Freund which is an improvement to the well-known Stoney formula. In addition to the elastic response, the new model considers plasticity of the copper film as well as temperature dependence of creep. It is demonstrated that the model can describe the experiment well and thus thermomechanical stress in copper films.

Temperature Dependence of TaSiN Thin Film Resistivity from Room Temperature to 900°C

2001 ◽  
Vol 40 (Part 2, No. 6B) ◽  
pp. L603-L605 ◽  
Author(s):  
Munenori Oizumi ◽  
Katsuhiro Aoki ◽  
Yukio Fukuda
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Film Resistivity

The Effect of the Passivation Material on the Stress and Stress Relaxation Behavior of Narrow Al-Si-Cu Lines

1996 ◽  
Vol 436 ◽  
Author(s):  
A. Witvrouw ◽  
P. Flinn ◽  
K. Maex
Keyword(s):  
Stress Relaxation ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Relaxation Behavior ◽  
Storage Test ◽  
Stress Relaxation Behavior ◽  
Passivation Film ◽  
Parallel Lines ◽  
Curvature Measurements ◽  
Substrate Curvature

Abstract800 nm thick and 1μm wide Al-1wt.%Si-0.5wt.% Cu parallel lines with 1 μm spacing were passivated with PECVD oxide, oxynitride or nitride. Substrate curvature measurements as a function of temperature and XRD-measurements at room temperature were used to characterize macroscopic samples of these parallel Al-Si-Cu-lines. By using both techniques the average inplane stresses for the Al-Si-Cu lines as well as for the covering passivation material can be determined as a function of temperature. The highest and lowest stresses in the Al-Si-Cu are observed for lines with nitride and oxide passivations, respectively. Also the number of voids in the lines after a storage test at 250 °C is clearly highest for a nitride passivation and lowest for an oxide passivation.The stress in the passivation itself and its temperature dependence is found to be very different from the stress in a blanket passivation film.

IN SITU MEASUREMENTS OF MACROSCOPIC FILM STRESS DURING GROWTH, COOLING, AND THERMAL CYCLING OF THIN FILM PTiO3

2005 ◽  
Vol 71 (1) ◽  
pp. 21-28 ◽  
Author(s):  
DAVID A. BOYD ◽  
MOHAMED Y. EL-NAGGAR ◽  
DAVID G. GOODWIN
Keyword(s):  
Thin Film ◽  
Thermal Cycling ◽  
In Situ Measurements ◽  
Film Stress
Sign in / Sign up

Export Citation Format

Share Document