Grain Enhancement of Thin Silicon Layers Using Optical Processing

1997 ◽  
Vol 470 ◽  
Author(s):  
B. L. Sopori ◽  
Jeff Alleman ◽  
W. Chen ◽  
T. Y. Tan ◽  
N. M. Ravindra
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Low Cost ◽  
Optical Processing ◽  
Glass Substrates ◽  
Coated Substrate ◽  
Grain Sizes ◽  
Fine Grain ◽  
A New Technique ◽  
Short Time

ABSTRACTWe describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (∼ 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

Production of nanopowders from physical vapor deposited films on nonmetallic substrates by conjunctional freezing-assisted ultrasonic extraction method

2018 ◽  
Vol 232 (4) ◽  
pp. 135-140 ◽  
Author(s):  
Oday A Hammadi
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Large Scale ◽  
Silicon Oxide ◽  
Low Cost ◽  
Glass Substrates ◽  
Iron Aluminum ◽  
Nickel Cobaltite ◽  
Nickel Copper ◽  
A New Technique

A new technique to extract nanoscale powders from thin films deposited by a physical vapor deposition method on nonmetallic substrates is proposed. Powders were extracted from films of different materials, such as silicon, nickel, copper, iron, aluminum and cobalt, and compounds, such as aluminum nitride, aluminum oxide, copper oxide, iron oxide, nickel cobaltite, nickel ferrite, nickel oxide, silicon carbide, silicon nitride and silicon oxide. These thin films were deposited on glass substrates by magnetron sputtering, pulsed-laser deposition, spray pyrolysis or thermal evaporation, and the particle sizes of the extracted powders were comparable to those of film samples. This technique is fast, low cost, reliable, highly clean and appropriate for large-scale samples.

Thermal conversion of CBD grown ZnS thin films to ZnO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kooliyankal Naseema ◽  
Kaniyamkandy Ribin ◽  
Nidiyanga Navya ◽  
Prasoon Prasannan
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Thermal Conversion ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Anion Substitution ◽  
Nano Crystalline ◽  
Before And After ◽  
Uv Visible

AbstractNano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.

scholarly journals Characterization of Electrodeposited Cadmium Selenide Thin Films

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Low Cost ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cdse Film ◽  
Cell Structures ◽  
Deposited Film ◽  
Deposited Films

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

scholarly journals Effects of Sulfurization Temperature on Properties of CZTS Films by Vacuum Evaporation and Sulfurization Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jie Zhang ◽  
Bo Long ◽  
Shuying Cheng ◽  
Weibo Zhang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Crystallite Size ◽  
Low Cost ◽  
Band Gap Energy ◽  
Vacuum Evaporation ◽  
Glass Substrates ◽  
Sulfurization Temperature ◽  
Czts Thin Films

Copper zinc tin sulfur (CZTS) thin films have been extensively studied in recent years for their advantages of low cost, high absorption coefficient (≥104 cm−1), appropriate band gap (~1.5 eV), and nontoxicity. CZTS thin films are promising materials of solar cells like copper indium gallium selenide (CIGS). In this work, CZTS thin films were prepared on glass substrates by vacuum evaporation and sulfurization method. Sn/Cu/ZnS (CZT) precursors were deposited by thermal evaporation and then sulfurized in N2+ H2S atmosphere at temperatures of 360–560°C to produce polycrystalline CZTS thin films. It is found that there are some impurity phases in the thin films with the sulfurization temperature less than 500°C, and the crystallite size of CZTS is quite small. With the further increase of the sulfurization temperature, the obtained thin films exhibit preferred (112) orientation with larger crystallite size and higher density. When the sulfurization temperature is 500°C, the band gap energy, resistivity, carrier concentration, and mobility of the CZTS thin films are 1.49 eV, 9.37 Ω · cm,1.714×1017 cm−3, and 3.89 cm2/(V · s), respectively. Therefore, the prepared CZTS thin films are suitable for absorbers of solar cells.

scholarly journals Short Time and Low Temperature Reaction between Metal Oxides through Microwave-Assisted Hydrothermal Method

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
S. M. V. Novais ◽  
P. C. R. Silva ◽  
Z. S. Macedo ◽  
L. B. Barbosa
Keyword(s):  
Low Temperatures ◽  
Hydrothermal Reaction ◽  
Low Cost ◽  
Broad Emission Band ◽  
Time Saving ◽  
Cadmium Tungstate ◽  
Microwave Assisted ◽  
Solid State Route ◽  
Broad Emission ◽  
Short Time

This work demonstrates the possibility of synthesis of cadmium tungstate at low temperatures using oxide precursors. Cadmium tungstate (CdWO4) scintillator was produced via microwave-assisted hydrothermal reaction using the precursors CdO and WO3. The methodology was based on microwave radiation for heating, which is remarkably faster than the solid-state route or conventional hydrothermal procedure. CdWO4 monoclinic (wolframite) structure was successfully obtained at 120°C for synthesis times as short as 20 min. This route does not require the use of templates or surfactants and yields self-assembled nanorods with size of around 24 ± 9 nm width and 260 ± 47 nm length. The growth mechanism for the formation of CdWO4 involves microwave-induced dissociation of the reagents and solvation of Cd2+ and WO42- ions, which are free to move and start the nucleation process. The luminescence properties of the produced nanoparticles were investigated, presenting a broad emission band at around 500 nm, which is comparable to that observed for samples produced using other chemical routes. This result highlights the great potential of the proposed method as a low-cost and time saving process to fabricate luminescent oxide nanoparticles.

scholarly journals Quasi-Rheotaxy a new technique to grow large grain thin films on low cost amorphous substrates

1981 ◽  
Vol 16 (1) ◽  
pp. 11-14 ◽  
Author(s):  
N. Romeo ◽  
V. Canevari ◽  
G. Sberveglieri ◽  
A. Tosi ◽  
A. Camanzi
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
New Technique ◽  
Amorphous Substrates ◽  
A New Technique

scholarly journals Solution-Based Deposition of Transparent Eu-Doped Titanium Oxide Thin Films for Potential Security Labeling and UV Screening

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1132 ◽  
Author(s):  
Anara Molkenova ◽  
Laura Khamkhash ◽  
Ainur Zhussupbekova ◽  
Kuanysh Zhussupbekov ◽  
Sagyntay Sarsenov ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Oxide ◽  
Low Cost ◽  
Visible Region ◽  
Photovoltaic Devices ◽  
Oxide Thin Films ◽  
Glass Substrates ◽  
Relaxation Transitions ◽  
Red Luminescence ◽  
Metal Doped

Transparent titanium oxide thin films attract enormous attention from the scientific community because of their prominent properties, such as low-cost, chemical stability, and optical transparency in the visible region. In this study, we developed an easy and scalable solution-based process for the deposition of transparent TiOx thin films on glass substrates. We showed that the proposed method is also suitable for the fabrication of metal-doped TiOx thin films. As proof-of-the-concept, europium Eu(III) ions were introduced into TiOx film. A photoluminescence (PL) study revealed that Eu-doped TiOx thin films showed strong red luminescence associated with 5D0→7Fj relaxation transitions in Eu (III). We found that prepared TiOx thin films significantly reduce the transmittance of destructive UV radiation; a feature that can be useful for the protection of photovoltaic devices. In addition, transparent and luminescent TiOx thin films can be utilized for potential security labeling.

A low-cost, ligand exchange-free strategy to synthesize large-grained Cu2ZnSnS4 thin-films without a fine-grain underlayer from nanocrystals

2015 ◽  
Vol 3 (34) ◽  
pp. 17788-17796 ◽  
Author(s):  
Tang Jiao Huang ◽  
Xuesong Yin ◽  
Chunhua Tang ◽  
Guojun Qi ◽  
Hao Gong
Keyword(s):  
Thin Films ◽  
Ligand Exchange ◽  
Low Cost ◽  
Hydrocarbon Chain ◽  
Solvent System ◽  
Organic Ligands ◽  
Fine Grain ◽  
Nanocrystal Films

Cu2ZnSnS4 nanocrystals without long hydrocarbon chain organic ligands are synthesized directly in a formamide solvent system. Annealing compacted nanocrystal films forms large-grained Cu2ZnSnS4 thin-films without an unwanted fine-grain underlayer.

A Novel Method to Fabricate Hydrophobic Surfaces Based on Candle Soot Particles and Polydimethylsiloxane

2013 ◽  
Vol 815 ◽  
pp. 610-615 ◽  
Author(s):  
Lei Yuan ◽  
Feng Zhang ◽  
Wei Ping Liu ◽  
Xiao Yong Gu ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Contact Angle ◽  
Low Cost ◽  
Inexpensive Method ◽  
Hydrophobic Surfaces ◽  
Hydrophobic Properties ◽  
Soot Particles ◽  
Glass Substrates ◽  
New Methods ◽  
Novel Method

In order to realize the realistic applications of hydrophobic surfaces in large scales, its essential to develop new methods for the fabrication of these surfaces at low cost. In this paper, we demonstrate a novel and inexpensive method to prepare hydrophobic thin films on glass substrates. At first, we applied polydimethylsiloxane to modify the glass substrates, followed by adding nanocandle soot particles onto the surface of polydimethylsiloxane. After solidification in blast oven, we obtained the hydrophobic surfaces on the glass substrates. The resultant surfaces with contact angle of 143o exhibit remarkable hydrophobic properties. This new method is very simple and holds great potential in the widespread practical production of hydrophobic surfaces.

Low-Temperature Growth of Epitaxial Semiconductor Nanostructures and Films

2011 ◽  
Vol 1308 ◽  
Author(s):  
Alp T. Findikoglu ◽  
Daniel E. Perea ◽  
S. T. Picraux
Keyword(s):  
Low Temperatures ◽  
High Performance ◽  
Low Cost ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Catalyst Layer ◽  
Semiconductor Nanostructures ◽  
Device Fabrication ◽  
Single Crystalline ◽  
Glass Substrates

ABSTRACTThe growth of epitaxial semiconductor nanostructures and films at low temperatures is important for semiconductor technology because it allows the possibility of monolithically integrating different high-performance single-crystalline semiconductor structures directly onto low cost technologically important substrates. At sufficiently low temperatures this can enable, for example, Si or Ge device fabrication on flexible substrates such as plastics. We have studied the reduced-temperature liquid-mediated growth of Ge nanostructures and films on crystalline template layers on non-single-crystalline substrates in a low-pressure chemical vapor deposition (LPCVD) system. The heteroepitaxial process is implemented by the Au seeded vapor-liquidsolid (VLS) catalytic growth technique with germane below 400 ºC. Crystalline template layers were prepared with ion-beam-assisted-deposition (IBAD) texturing and electron-beam evaporation on glass substrates. A thin layer of e-beam evaporated Au forms the catalyst layer, upon which we grew Ge films at 386 ºC. Scanning electron microscopy and x-ray diffraction results indicated that both Ge islands and nanowires grew heteroepitaxially on the crystalline template layers on glass substrates with good alignment over large areas.

Sign in / Sign up

Export Citation Format

Share Document