A low-cost, ligand exchange-free strategy to synthesize large-grained Cu2ZnSnS4 thin-films without a fine-grain underlayer from nanocrystals

2015 ◽  
Vol 3 (34) ◽  
pp. 17788-17796 ◽  
Author(s):  
Tang Jiao Huang ◽  
Xuesong Yin ◽  
Chunhua Tang ◽  
Guojun Qi ◽  
Hao Gong
Keyword(s):  
Thin Films ◽  
Ligand Exchange ◽  
Low Cost ◽  
Hydrocarbon Chain ◽  
Solvent System ◽  
Organic Ligands ◽  
Fine Grain ◽  
Nanocrystal Films

Cu2ZnSnS4 nanocrystals without long hydrocarbon chain organic ligands are synthesized directly in a formamide solvent system. Annealing compacted nanocrystal films forms large-grained Cu2ZnSnS4 thin-films without an unwanted fine-grain underlayer.

Grain Enhancement of Thin Silicon Layers Using Optical Processing

1997 ◽  
Vol 470 ◽  
Author(s):  
B. L. Sopori ◽  
Jeff Alleman ◽  
W. Chen ◽  
T. Y. Tan ◽  
N. M. Ravindra
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Low Cost ◽  
Optical Processing ◽  
Glass Substrates ◽  
Coated Substrate ◽  
Grain Sizes ◽  
Fine Grain ◽  
A New Technique ◽  
Short Time

ABSTRACTWe describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (∼ 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

AISI 1030

Alloy Digest ◽  
1983 ◽  
Vol 32 (5) ◽  
Keyword(s):  
Fracture Toughness ◽  
Corrosion Resistance ◽  
Low Cost ◽  
Heat Treating ◽  
Plain Carbon Steel ◽  
General Purpose ◽  
Fine Grain ◽  
Steel Mills ◽  
Medium Strength ◽  
Hot Rolled

Abstract AISI 1030 is a plain carbon steel containing nominally 0.30% carbon. It is used in the hot-rolled, normalized, oil-quenched-and-tempered or water-quenched-and-tempered conditions for general-purpose engineering and construction. It provides medium strength and toughness at low cost. Among its many uses are axles, bolts, gears and building sections. All data are on a single heat of fine-grain steel. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as fracture toughness. It also includes information on corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: CS-94. Producer or source: Carbon and alloy steel mills.

Ionic Conductivities of Doped CeO2 Thin Films as Related to Their Microstructure

1995 ◽  
Vol 411 ◽  
Author(s):  
Chunyan Tian ◽  
Siu-Wai Chan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ionic Conductivities ◽  
Dielectric Constants ◽  
Grain Structure ◽  
X Ray Diffraction ◽  
Fine Grain ◽  
Brick Layer Model ◽  
Columnar Grain ◽  
Beam Deposition

ABSTRACTThin films of 4% Y2O3 doped CeO2/Pd film/(001)LaA103 with a very low pinhole density were successfully prepared using electron-beam deposition technique. The microstructure of the films was characterized by x-ray diffraction and the electrical properties were studied as a function of temperature with AC impedance spectroscopy. A brick layer model was adopted to correlate the electrical properties to the microstructure of the films, which can be simplified as either a series or a parallel equivalent circuit associated with either a fine grain or a columnar grain structure, respectively. The conductivities of the films fell between the conductivities derived from the two circuit models, suggesting that the films are of a mixed fine grain and columnar grain structure. The measured dielectric constants of the films were found smaller than that of the bulk.

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

Preparation of CuSbS2 thin films by a facile and low-cost chemical solution method

2017 ◽  
Vol 29 (5) ◽  
pp. 4075-4079
Author(s):  
Wei Wang ◽  
Lingyun Hao ◽  
Wei Zhang ◽  
Qing Lin ◽  
Xiaojuan Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solution Method ◽  
Low Cost ◽  
Chemical Solution ◽  
Chemical Solution Method

Thermal conversion of CBD grown ZnS thin films to ZnO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kooliyankal Naseema ◽  
Kaniyamkandy Ribin ◽  
Nidiyanga Navya ◽  
Prasoon Prasannan
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Thermal Conversion ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Anion Substitution ◽  
Nano Crystalline ◽  
Before And After ◽  
Uv Visible

AbstractNano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.

scholarly journals Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Sarita Boolchandani ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Temperature Variation ◽  
Thermal Evaporation ◽  
Low Cost ◽  
High Vacuum ◽  
Power Measurement ◽  
Thermal Evaporation Method ◽  
Evaporation Method

The indium selenium (InSe) bilayer thin films of various thickness ratios, InxSe(1-x) (x = 0.25, 0.50, 0.75), were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe) and aluminum selenide (AlSe) bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.

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