Chemical Trends in Electronic Properties of Gold-3D Transition Metal Impurity Pairs in Silicon
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ABSTRACTWe report theoretical investigations of the chemical trends in the electronic properties of substitutional gold-interstitial transition-metal complexes in silicon. The results show that the stable pairs in trigonal symmetry are formed by a covalent mechanism which includes, besides Au and TM impurities, also the Si neighbors, rather than being derived from interactions between two electrostatically bound point charges.
2011 ◽
Vol 115
(30)
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pp. 9410-9416
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