Electronic properties and hyperfine parameters of gold–3d-transition-metal impurity pairs in silicon

1998 ◽  
Vol 58 (7) ◽  
pp. 3870-3878 ◽  
Author(s):  
Lucy V. C. Assali ◽  
João F. Justo
1997 ◽  
Vol 469 ◽  
Author(s):  
J. F. Justo ◽  
L. V. C. Assali

ABSTRACTWe report theoretical investigations of the chemical trends in the electronic properties of substitutional gold-interstitial transition-metal complexes in silicon. The results show that the stable pairs in trigonal symmetry are formed by a covalent mechanism which includes, besides Au and TM impurities, also the Si neighbors, rather than being derived from interactions between two electrostatically bound point charges.


1995 ◽  
Vol 182-184 ◽  
pp. 703-706 ◽  
Author(s):  
M. Szuszkiewicz ◽  
E. Dynowska ◽  
J. Gorecka ◽  
J. Kachniarz ◽  
S. Miotkowska ◽  
...  

1979 ◽  
Vol 92 (2) ◽  
pp. K147-K150 ◽  
Author(s):  
V. K. Bashenov ◽  
I. K. Doicho ◽  
A. G. Petukhov

1993 ◽  
Vol 143-147 ◽  
pp. 761-766 ◽  
Author(s):  
H. Nakashima ◽  
Taizoh Sadoh ◽  
H. Kitagawa ◽  
K. Hashimoto

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