Diffusion of Gold into Heavily Boron-Doped Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
H. Bracht ◽  
A. Rodriguez Schachtrup
Keyword(s):  
Doping Level ◽  
Hole Concentration ◽  
Effective Diffusion ◽  
Boron Doped ◽  
Enthalpy Difference ◽  
Background Doping ◽  
B Doping ◽  
P Type ◽  
Level Effect ◽  
Positively Charged

ABSTRACTDiffusion of Au into dislocation-free and highly dislocated Si with high B-background doping levels has been investigated with the aid of neutron activation analysis in conjunction with mechanical sectioning. The high B-doping level causes extrinsic conditions, i.e., the hole concentration exceeds the intrinsic carrier concentration even at diffusion temperatures between 900°C and 1100°C. All profiles are accurately described on the basis of the kick-out diffusion model and a mechanism which takes into account segregation of Au at dislocations. Our analysis provides solubility data of Au in Si and effective diffusion coefficients related to interstitial Au and Si self-interstitials I. The dependence of these quantities on the B-background doping level is well described by the Fermi-level effect. This analysis supports singly positively charged states in p-type Si of Au on interstitial (Aui) and substitutional (Aus) sites and of Si self-interstitials. Successful fitting of additionally requires an acceptor level of Aus. The electrical properties deduced for Aui, Aus and I are summarized in Table 2. Au profiles in highly dislocated Si obtained especially after diffusion at 900° C give evidence of Au trapped at dislocations. From our preliminary experimental results we determine an enthalpy difference of 2.7 eV between Au on substitutional sites and Au captured at dislocations.

Fermi-Level effect and junction carrier concentration effect on p-Type dopant distribution in IlI-V Compound superlattices

1998 ◽  
Vol 535 ◽  
Author(s):  
Chang-Ho Chen ◽  
Ulrich M. Gösele ◽  
Teh Y. Tan
Keyword(s):  
Electric Field ◽  
Fermi Level ◽  
Hole Concentration ◽  
Equilibrium Concentration ◽  
Dopant Atom ◽  
Group Iii ◽  
Atom Diffusion ◽  
Segregation Phenomenon ◽  
P Type ◽  
Positively Charged

AbstractThe pronounced segregation phenomenon in the distribution of p-type dopants Zn and Be in GaAs and related III-V compound heterostructures has been explained quantitatively by treating simultaneously the processes of dopant atom diffusion, segregation, and the effect of heterojunction carrier concentrations on these two aspects. Segregation of a dopant species between two semiconductor heterostructure layers is described by a model incorporating (i) a chemical effect on the neutral species; and (ii) in addition, a Fermi-level effect on the ionized species. The process of Zn and Be diffusion in GaAs and related compounds is governed by the doubly-positively-charged group III element self-interstitials whose thermal equilibrium concentration and hence also the Zn and Be diffusivities exhibit also a Fermi-level dependence, i.e., in proportion to p2.A heterojunction is consisting of a space charge region with an electric field, in which the hole concentration is different from those in the bulk layers. This influences the junction region concentrations of and of Zn− or Be−, which in turn influence the distribution of the ionized acceptor atoms. The overall process involves diffusion and segregation of holes, , Zn− or Be−, and an ionized interstitial acceptor species. The junction electric field also changes with time and position.

Defect Density in Doped a-Si:H Films

1990 ◽  
Vol 192 ◽  
Author(s):  
K. Pierz ◽  
H. Mell ◽  
W. Fuhs
Keyword(s):  
Thermal Equilibrium ◽  
Defect Density ◽  
Electronic Energy ◽  
Dangling Bond ◽  
Thermal Equilibrium State ◽  
Boron Doped ◽  
Atomic Spacing ◽  
P Type ◽  
Defect Reaction ◽  
Positively Charged

ABSTRACTWe compare the experimentally observed correlation between the density of charged dangling–bond defects and the Fermi–level position in n– and p–type a–Si:H films with the predictions of two hydrogen–related models for the thermal equilibrium state at the glass–transition temperature of the hydrogen glass in a–Si:H. Reasonable agreement is obtained with a defect reaction in which the transfer of hydrogen from Si–H bonds to weak bonds is limited to distances comparable to one atomic spacing. The results for p–type (boron–doped) films suggest that the formation of positively charged dangling–bond defects is not only determined by electronic energy differences but also by a relaxational energy gain of approximately 0.2eV.

Mobility characterization of p-type and n-type strained sil-x-yGexcy/Si Epilayer hall devices

1998 ◽  
Vol 535 ◽  
Author(s):  
Jeff J. Petersoa ◽  
Charles E. Hunt ◽  
Stefan F. Zappe ◽  
Ernst Obeneier ◽  
Richard Westhoff ◽  
...  
Keyword(s):  
Doping Level ◽  
Doping Concentration ◽  
Impurity Scattering ◽  
Temperature Range ◽  
Boron Doped ◽  
Ionized Impurity Scattering ◽  
Van Der Pauw ◽  
P Type

AbstractMobilities in Si1-x-yGex Cy layers were measured using mesa etched Van der Pauw structures for alloy layers with 0 < x < 0.30 and 0 < y < 0.02 and doping levels of 1015 < N < 1018 cm-3. Mobilities in Si1-x-yGex Cy layers with x = 0.27 were found to approach Si mobilities for both μn and μp.While electron mobilities in phosphorous-doped SiGeC decrease with doping concentration, hole mobilities in boron-doped SiGeC increase with doping level, indicating ionized impurity scattering is not dominant for μp over the temperature range studied.

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

2014 ◽  
Vol 1634 ◽  
Author(s):  
Luana S. Araujo ◽  
Olivia Berengue ◽  
Maurício Baldan ◽  
Neidenei Ferreira ◽  
João Moro ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Surface Adsorbates ◽  
P Type

ABSTRACTDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC

2001 ◽  
Vol 80 (1-3) ◽  
pp. 357-361 ◽  
Author(s):  
R. Weingärtner ◽  
M. Bickermann ◽  
S. Bushevoy ◽  
D. Hofmann ◽  
M. Rasp ◽  
...  
Keyword(s):  
Doping Level ◽  
P Type

An effective and efficient approach to p-type AlN by Be2:O codoping from first-principles calculations

2016 ◽  
Vol 30 (20) ◽  
pp. 1650257
Author(s):  
Meng Zhao ◽  
Wenjun Wang ◽  
Jun Wang ◽  
Junwei Yang ◽  
Weijie Hu ◽  
...  
Keyword(s):  
First Principles ◽  
Ionization Energy ◽  
Hole Concentration ◽  
Valence Band Maximum ◽  
First Principles Calculations ◽  
Mutual Compensation ◽  
Efficient Approach ◽  
P Type ◽  
Codoping Method

Various Be:O-codoped AlN crystals have been investigated via first-principles calculations to evaluate the role of the different combinations in effectively and efficiently inducing p-type carriers. It is found that the O atom is favored to bond with two Be atoms. The formed Be2:O complexes decrease the acceptor ionization energy to 0.11 eV, which is 0.16 eV lower than that of an isolated Be in AlN, implying that the hole concentration could probably be increased by 2–3 orders of magnitude. The electronic structure of Be2:O-codoped AlN shows that the lower ionization energy can be attributed to the interaction between Be and O. The Be–O complexes, despite failing to induce p-type carriers for the mutual compensation of Be and O, introduce new occupied states on the valence-band maximum (VBM) and hence the energy needed for the transition of electrons to the acceptor level is reduced. Thus, the Be2:O codoping method is expected to be an effective and efficient approach to realizing p-type AlN.

scholarly journals Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures

2002 ◽  
Vol 719 ◽  
Author(s):  
Ian D. Sharp ◽  
Hartmut A. Bracht ◽  
Hughes H. Silvestri ◽  
Samuel P. Nicols ◽  
Jeffrey W. Beeman ◽  
...  
Keyword(s):  
Multilayer Structure ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Processes ◽  
Quantitative Description ◽  
Multilayer Structures ◽  
Dopant Diffusion ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Boron Doped ◽  
P Type

AbstractIsotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. 30Si was used as a tracer through a multilayer structure of alternating natural Si and enriched 28Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850°C and 1100°C. A specially designed ion-implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

Sign in / Sign up

Export Citation Format

Share Document