Point Defects, Diffusion and Gettering in Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
U. Gösele ◽  
D. Conrad ◽  
P. Werner ◽  
Q.-Y. Tong ◽  
R. Gafiteanu ◽  
...  
Keyword(s):  
Point Defects ◽  
Diffusion Processes ◽  
Silicon On Insulator ◽  
Intrinsic Point Defects ◽  
The Status ◽  
Long Time ◽  
Effective Diffusivities ◽  
And Control ◽  
Soi Substrates ◽  
Measurement And Control

ABSTRACTThe status of our knowledge on intrinsic point defects and diffusion mechanisms is reviewed. Special attention is given to the question of the possible role of carbon in influencing effective diffusivities of intrinsic point defects and the resulting consequences for the values of vacancy and self-interstitial thermal equilibrium concentrations and diffusivities. It is pointed out that we might have to deal with the unfortunate situation that the effective diffusivities of intrinsic point defects might be influenced already by a carbon concentration which is below the detection limit and therefore not amenable to measurement and control. Whereas dopant diffusion processes have been modeled and simulated for a long time the first attempts to quantitatively simulate various gettering processes have just started as will be described in the paper. Finally, the subject of microcrack formation in hydrogen implanted silicon will be dealt with as used for the so-called “smart-cut” process for fabricating silicon-on-insulator (SOI) substrates with thin and uniform silicon layers by wafer bonding. Presently no quantitative treatment of this fascinating hydrogen agglomeration phenomenon is available.

Large Apparatus and Tele-Monitoring System Based on Embedded System

2014 ◽  
Vol 912-914 ◽  
pp. 1283-1286
Author(s):  
Zhi Ping Zhang ◽  
Chang Xu Jiang ◽  
Rong Nian Tang
Keyword(s):  
Embedded System ◽  
Mobile Phone ◽  
Monitoring System ◽  
Large Scale ◽  
Laboratory Staff ◽  
The Status ◽  
Long Time ◽  
The Embedded System ◽  
And Control ◽  
Tele Monitoring

Large-scale instrumentation equipment usually runs a long time, sometimes even runs all night long. If not arrange the laboratory staff guard it, when equipment fails, it can only be allowed to develop, and in severe cases can cause the large instrument and equipment damage; To address this issue, propose a large apparatus and tele-monitoring system based on embedded system and through the HD camera collects the status of the indicator lamps of the large instrument, and through the algorithms identification of the embedded system, and the JPEG encoding and control, and using GPRS module sends images to the experimenter's mobile phone to achieve the remote monitoring of equipment; And researchers can the control the system via mobile phone to send instructions to achieve the remote control.

Point Defects and Diffusion in Semiconductors

MRS Bulletin ◽  
1991 ◽  
Vol 16 (11) ◽  
pp. 42-46 ◽  
Author(s):  
Ulrich M. Gösele ◽  
Teh Y. Tan
Keyword(s):  
Point Defects ◽  
Integrated Circuit ◽  
Diffusion Processes ◽  
Semiconductor Industry ◽  
Surface Oxidation ◽  
Optoelectronic Device ◽  
Intrinsic Point Defects ◽  
Impurity Atoms ◽  
Circuit Fabrication ◽  
Dopant Atoms

Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.

Zone-Melt-Recrystallization of Silicon-On-Insulator Films Using a Dual-Lamp Apparatus

1987 ◽  
Vol 107 ◽  
Author(s):  
S. Ramesh
Keyword(s):  
Power Density ◽  
Silicon On Insulator ◽  
Density Profiles ◽  
In Situ Study ◽  
Careful Measurement ◽  
And Control ◽  
Measurement And Control ◽  
Zone Melt ◽  
Tungsten Lamp

AbstractWe have studied the recrystallization of silicon films using a focused dual-lamp apparatus. By careful measurement and control of the power density profile (and focal-plane location) of the line-image and of the uniformity of the substrate temperature we have achieved recrystallization of SOI films on 4“silicon wafers. By taking advantage of the measured difference in power-density-profiles of an arc lamp and a tungsten lamp in the dual-lamp apparatus we have achieved low temperature-gradient, reduced-stress recrystallization yielding SOI films in which the usual branched pattern of subgrain-boundaries are replaced by individual dislocations. In situ study of the melt- and growth-fronts, was done using a viewing system with a resolution of - 10 ¼m. We have also done studies of stress-relief schemes.

The Studies of a Temperature Monitor System for Electric Equipments Based on Infrared Technical and Virtual Instruments

2011 ◽  
Vol 219-220 ◽  
pp. 1617-1620 ◽  
Author(s):  
Hao Yang Cui ◽  
Zhong Tang ◽  
Yong Fang ◽  
Jun Liu ◽  
Ting Qian ◽  
...  
Keyword(s):  
Electrical Equipment ◽  
Virtual Instruments ◽  
Parameter Setting ◽  
System A ◽  
The Status ◽  
Temperature Monitor ◽  
Query System ◽  
Data Acquisition And Processing ◽  
And Control ◽  
Measurement And Control

Temperature is one of the most important parameters to evaluate the status of electric equipments. In this paper, a temperature monitor and query system based on virtual instruments and infrared temperature monitoring technical is introduced, including the hardware build-up and software realization. The system a multiple function system, including measurement and control parameter setting; data acquisition and processing; data, chart and graph displaying; signal processing and analyzing; data saving and so on. It can meet the need of the precision request in the temperature measurement of electrical equipment. Also it can be applied in other related experiments and developed further.

Emissions and Control Technology of PM2.5 in Coal-Fired Power Plant

2012 ◽  
Vol 610-613 ◽  
pp. 2058-2062
Author(s):  
Fang Qin Li ◽  
Xiao Feng Zhang ◽  
Jian Xing Ren ◽  
Yan Chao Li ◽  
Hao Cui ◽  
...  
Keyword(s):  
Power Plant ◽  
Power Plants ◽  
Hazardous Substances ◽  
Atmospheric Environment ◽  
Wide Range ◽  
The Status ◽  
Long Time ◽  
Control Technologies ◽  
And Control ◽  
Pm2.5 Emissions

In China, the pollution problems of PM2.5 have become increasingly serious. In recent years, the haze phenomenon caused by PM2.5 in many cities was for a wide range of frequent outbreaks, resulting in the serious deterioration of air quality. PM2.5 is rich in a large number of toxic and hazardous substances and stays a long time in the atmosphere, which makes a great impact on human health and quality of atmospheric environment. Coal-fired power plant is an important source of PM2.5 emissions. In this paper, briefly describes the status of the PM2.5 emissions from coal-fired power plants and control technologies. Analyzes the pros and cons of various technologies, application status and future applications.

Rancang Bangun Sistem Penerimaan Dan Mutasi Barang Pada PDAM Tirta Kerta Raharja

Sensi Journal ◽  
2020 ◽  
Vol 6 (2) ◽  
pp. 236-246
Author(s):  
Ilamsyah Ilamsyah ◽  
Yulianto Yulianto ◽  
Tri Vita Febriani
Keyword(s):  
System Analysis ◽  
Object Oriented ◽  
Analysis Method ◽  
Web Based ◽  
Visual Modeling ◽  
Long Time ◽  
The Right ◽  
And Control ◽  
Web Based System ◽  
The Web

The right and appropriate system of receiving and transferring goods is needed by the company. In the process of receiving and transferring goods from the central warehouse to the branch warehouse at PDAM Tirta Kerta Raharja, Tangerang Regency, which is currently done manually is still ineffective and inaccurate because the Head of Subdivision uses receipt documents, namely PPBP and mutation of goods, namely MPPW in the form of paper as a submission media. The Head of Subdivision enters the data of receipt and mutation of goods manually and requires a relatively long time because at the time of demand for the transfer of goods the Head of Subdivision must check the inventory of goods in the central warehouse first. Therefore, it is necessary to hold a design of information systems for the receipt and transfer of goods from the central warehouse to a web-based branch warehouse that is already database so that it is more effective, efficient and accurate. With the web-based system of receiving and transferring goods that are already datatabed, it can facilitate the Head of Subdivision in inputing data on the receipt and transfer of goods and control of stock inventory so that the Sub Head of Subdivision can do it periodically to make it more effective, efficient and accurate. The method of data collection is done by observing, interviewing and studying literature from various previous studies, while the system analysis method uses the Waterfall method which aims to solve a problem and uses design methods with visual modeling that is object oriented with UML while programming using PHP and MySQL as a database.

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