Ring-Related Defects in MCZ Wafer Comparison by Electrical, Structural, and Device Properties

1997 ◽  
Vol 469 ◽  
Author(s):  
F. González ◽  
M. McQueen ◽  
R. Barbour ◽  
G. A. Rozgonyi
Keyword(s):  
Impurity Concentration ◽  
Depth Distribution ◽  
Stacking Faults ◽  
Iron Impurity ◽  
Thermal Cycles ◽  
Annular Ring ◽  
Oxygen Precipitate ◽  
Device Properties ◽  
Cmos Processing

ABSTRACTThermal cycles in advanced CMOS processing can nucleate an annular ring of oxygen precipitate-induced stacking faults (OSF-ring) via activation of bulk nuclei grown-in during the crystal pulling process. Because the OSF-ring can adversely affect device characteristics, it is important that substrates with OSF-ring characteristics be detected early in the process. Results are presented in this paper from a typical DRAM device which show that the ring can act either in a beneficial gettering mode or as a device-degrading zone, depending on the depth distribution of the OSF-ring defects and the background iron impurity concentration.

A Study of Stacking Faults during CMOS Processing: Origin, Elimination and Contribution to Leakage

1980 ◽  
Vol 127 (3) ◽  
pp. 716-724 ◽  
Author(s):  
S. P. Murarka ◽  
T. E. Seidel ◽  
J. V. Dalton ◽  
J. M. Dishman ◽  
M. H. Read
Keyword(s):  
Stacking Faults ◽  
Cmos Processing

The Effect of Annealing Temperature on the Morphology of Stacking Faults in Czochralski Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
R. F. Pinizzotto ◽  
H. F. Schaake
Keyword(s):  
Annealing Temperature ◽  
Stacking Faults ◽  
Nucleation And Growth ◽  
X Ray ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Oxygen Precipitate

ABSTRACTNucleation and growth of stacking faults formed in CZ silicon during oxygen precipitation have been studied using x-ray topography, TEM and FTIR. Samples were annealed in argon for various times at 550°C and 750°C followed by a 16 hour anneal in dry oxygen at 1000°C. In samples annealed at 550°C, the stacking faults were several layers thick with colonies of precipitates at their centers. The faults in samples annealed at 750°C contained only one particle and were single in nature. It is proposed that the faults are formed by thin oxygen precipitate platelets and that the different morphologies are due to different oxygen precipitation rates. The platelets are probably a modified cristobalite, as determined by micro-diffraction results.

The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation

2003 ◽  
Vol 796 ◽  
Author(s):  
Prabhakar Bandaru ◽  
Subal Sahni ◽  
Eli Yablonovitch ◽  
Hyung-Jun Kim ◽  
Ya-Hong Xie
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Electron Beam Evaporation ◽  
Si Substrates ◽  
Surface Hydrogen ◽  
Growth Modes ◽  
Device Properties ◽  
Cmos Processing

ABSTRACTWe report on the low temperature growth, by molecular beam epitaxy (375 °C) and electron-beam evaporation (300 °C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke Ge diffusion and growth modes as a function of deposition temperature and rate to correlate structural analysis with the device performance.

Weak Beam Imaging and Diffraction Studies of Stacking Faults in Silicon

1976 ◽  
Vol 34 ◽  
pp. 590-591
Author(s):  
T. Y. Tan ◽  
W. K. Tice
Keyword(s):  
Fast Neutron ◽  
Rapid Determination ◽  
Stacking Faults ◽  
Imaging Method ◽  
Large Reduction ◽  
Dislocation Loops ◽  
Fringe Spacing ◽  
Weak Beam ◽  
Kinematical Theory

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.

A new method of complex structure analysis by electron microscopy

1978 ◽  
Vol 36 (1) ◽  
pp. 628-629
Author(s):  
V.V. Rybin ◽  
E.V. Voronina
Keyword(s):  
Complex Structure ◽  
Reciprocal Lattice ◽  
Stacking Faults ◽  
Plastic Strains ◽  
Base Position ◽  
Structural Regularity ◽  
Orientation Matrix ◽  
Computerized Processing ◽  
Fully Automatic ◽  
Diffraction Patterns

Recently, it has become essential to develop a helpful method of the complete crystallographic identification of fine fragmented crystals. This was maainly due to the investigation into structural regularity of large plastic strains. The method should be practicable for determining crystallographic orientation (CO) of elastically stressed micro areas of the order of several micron fractions in size and filled with λ>1010 cm-2 density dislocations or stacking faults. The method must provide the misorientation vectors of the adjacent fragments when the angle ω changes from 0 to 180° with the accuracy of 0,3°. The problem is that the actual electron diffraction patterns obtained from fine fragmented crystals are the superpositions of reflections from various fragments, though more than one or two reflections from a fragment are hardly possible. Finally, the method should afford fully automatic computerized processing of the experimental results.The proposed method meets all the above requirements. It implies the construction for a certain base position of the crystal the orientation matrix (0M) A, which gives a single intercorrelation between the coordinates of the unity vector in the reference coordinate system (RCS) and those of the same vector in the crystal reciprocal lattice base : .

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

The observation of nano-voids in Au thin films

1987 ◽  
Vol 45 ◽  
pp. 366-367
Author(s):  
William Krakow
Keyword(s):  
Thin Films ◽  
Melting Point ◽  
Present Author ◽  
Stacking Faults ◽  
Damage Threshold ◽  
Ionic Species ◽  
Rare Gases ◽  
Chain Defects ◽  
Vacancy Chains ◽  
Au Thin Films

It has long been known that defects such as stacking faults and voids can be quenched from various alloyed metals heated to near their melting point. Today it is common practice to irradiate samples with various ionic species of rare gases which also form voids containing solidified phases of the same atomic species, e.g. ref. 3. Equivalently, electron irradiation has been used to produce damage events, e.g. ref. 4. Generally all of the above mentioned studies have relied on diffraction contrast to observe the defects produced down to a dimension of perhaps 10 to 20Å. Also all these studies have used ions or electrons which exceeded the damage threshold for knockon events. In the case of higher resolution studies the present author has identified vacancy and interstitial type chain defects in ion irradiated Si and was able to identify both di-interstitial and di-vacancy chains running through the foil.

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