The Effect of Annealing Temperature on the Morphology of Stacking Faults in Czochralski Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
R. F. Pinizzotto ◽  
H. F. Schaake
Keyword(s):  
Annealing Temperature ◽  
Stacking Faults ◽  
Nucleation And Growth ◽  
X Ray ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Oxygen Precipitate

ABSTRACTNucleation and growth of stacking faults formed in CZ silicon during oxygen precipitation have been studied using x-ray topography, TEM and FTIR. Samples were annealed in argon for various times at 550°C and 750°C followed by a 16 hour anneal in dry oxygen at 1000°C. In samples annealed at 550°C, the stacking faults were several layers thick with colonies of precipitates at their centers. The faults in samples annealed at 750°C contained only one particle and were single in nature. It is proposed that the faults are formed by thin oxygen precipitate platelets and that the different morphologies are due to different oxygen precipitation rates. The platelets are probably a modified cristobalite, as determined by micro-diffraction results.

Effect of Manganese on Titanium Thin Films Adhesion Deposited on Steel Substrates

2012 ◽  
Vol 326-328 ◽  
pp. 583-586
Author(s):  
R. Gheriani ◽  
Raouf Mechiakh
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Vacuum Annealing ◽  
Pure Titanium ◽  
Nucleation And Growth ◽  
Thin Solid Films ◽  
X Ray ◽  
Solid Films ◽  
Titanium Thin Films ◽  
Steel Substrates

The mainly property of thin solid films technologies is their adhesion to the substrates. Because of its good wear resistance and its low coefficient of friction against steel, TiC is an attractive coating material for wear applications such as bearing components. The adhesion of TiC coatings, however suffers from insufficient reproducibility, which is probably due to uncontrolled process parameters. In our work pure titanium thin films of approximately 0.6 µm in thickness were prepared on 100C6 stainless steel substrates by cathodic sputtering. The samples were subjected to secondary vacuum annealing at a temperature between 400 and 1000°C for 30 min. The reaction between substrates and thin films was characterized using an x-ray diffractometer (XRD). Surface morphology and elements diffusion evaluations were carried out by scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS). The interaction substrates-thin films is accompanied by nucleation and growth of titanium carbide as a function of annealing temperature. By the SEM and EDS results, it appears clearly that the diffusion of manganese to the external layers leads to the destruction of adhesion especially at high temperatures.

Homogeneous and Heterogeneous Nucleation of Oxygen in Si-CZ

2011 ◽  
Vol 178-179 ◽  
pp. 495-500
Author(s):  
Josef Kubena ◽  
Alan Kubena ◽  
Ondřej Caha ◽  
Mojmir Meduna
Keyword(s):  
Homogeneous Nucleation ◽  
Annealing Temperature ◽  
Nucleation Theory ◽  
Classical Nucleation Theory ◽  
Nucleation Kinetics ◽  
Czochralski Silicon ◽  
Oxygen Precipitate ◽  
Different Populations ◽  
The Impact ◽  
Kinetics Of

We present numerical simulations of nucleation kinetics of vacancies and interstitials during RTA and we study the impact of annealing temperature on bulk micro defect concentration. Since the concentration of vacancies and oxygen and also its diffusion kinetics are significantly different inside Czochralski silicon, we assume the nucleation of vacancies and oxygen independent on each other. We show that different populations of voids formed during RTA can influence formation of oxygen precipitate nuclei. According to classical nucleation theory the homogeneous nucleation dominates around temperatures 500 °C while the calculation of oxygen diffusion into the voids shows that the oxygen clusters over the critical size can be formed above temperatures 700 °C. The nuclei concentration of BMD is thus the superposition of homogeneous nucleation below 700 °C and heterogeneous one prevailing above 700 °C.

Nucleation of Oxygen Precipitates in a Quenched Czochralski Silicon Crystal

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Ikari ◽  
H. Haga ◽  
O. Yoda ◽  
A. Uedono ◽  
Y. Ujihira
Keyword(s):  
Annealing Temperature ◽  
Silicon Crystal ◽  
Ir Absorption ◽  
Quenching Temperature ◽  
Annealing Behavior ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Ir Absorption Spectra ◽  
Oxygen Precipitates ◽  
Oxygen Complexes

ABSTRACTWe have studied the nucleation of oxygen precipitates in Czochralski (Cz) Si crystal quenched from high temperature (1390°C). We observed that the oxygen precipitation was enhanced by the quenching treatment. We found the density of precipitates in the quenched crystal depended on quenching temperature and that nuclei for oxygen precipitates were introduced during quenching. We studied these nuclei using infrared absorption (IR) and positron annihilation techniques. In order to clarify the state of the nuclei, the quenched specimens were irradiated with 3-MeV electrons at a dose of 1×1018e/cm2 and vacancy-oxygen complexes were introduced. Positron lifetime spectra and IR absorption spectra for these specimens were measured as a function of isochronal annealing temperature. From the annealing behavior of the vacancy-oxygen complexes, it was found that oxygen clusters are introduced by the quenching and these clusters are the nuclei for the enhanced precipitation of the quenched Si crystal.

The Effect of Carbon on the Precipitation of Oxygen in Czochralski Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
R. F. Pinizzotto ◽  
H. F. SCHAAKE
Keyword(s):  
Interfacial Energy ◽  
Carbon Material ◽  
Single Step ◽  
Low Carbon ◽  
High Carbon ◽  
X Ray ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Carbon Impurities ◽  
Light Precipitation

ABSTRACTResearchers in both the U. S. and Japan have reported that carbon impurities can significantly alter the precipitation of oxygen in CZ silicon. We have employed FTIR, x-ray topography and TEM to study this phenomenon in silicon containing < 2 × 1016 C cm−3 or 1.3 × 1017 C cm−3. A single step anneal of 16 hours at 1000°C will cause oxygen precipitation to occur in the high carbon material, while a 32 hour pre-anneal at 600°C is necessary for precipitation in the low carbon material. If a single anneal of 120 hours at 750°C is used, light precipitation occurs in both types of material. A pre-anneal of 15 minutes at 1000°C followed by 120 hours at 750°C reduces precipitation in the high carbon material only slightly, but completely eliminates precipitation in the low carbon material. It can be concluded that carbon causes heterogeneous nucleation of oxygen precipitation in CZ silicon and it is proposed that it does so by lowering the interfacial energy of the precipitates.

Defect structures of Nb1+αS2 sulfidation scales

1992 ◽  
Vol 50 (1) ◽  
pp. 38-39
Author(s):  
Chuxin Zhou ◽  
L. W. Hobbs
Keyword(s):  
Stacking Faults ◽  
Rhombohedral Structure ◽  
Stacking Sequence ◽  
Defect Structures ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plane Normal ◽  
Lower Case ◽  
Sulfur Layer ◽  
Two Phases

One of the major purposes in the present work is to study the high temperature sulfidation properties of Nb in severe sulfidizing environments. Kinetically, the sulfidation rate of Nb is satisfactorily slow, but the microstructures and non-stoichiometry of Nb1+αS2 challenge conventional oxidation/sulfidation theory and defect models of non-stoichiometric compounds. This challenge reflects our limited knowledge of the dependence of kinetics and atomic migration processes in solid state materials on their defect structures.Figure 1 shows a high resolution image of a platelet from the middle portion of the Nb1+αS2 scale. A thin lamellar heterogeneity (about 5nm) is observed. From X-ray diffraction results, we have shown that Nb1+αS2 scale is principally rhombohedral structure, but 2H-NbS2 can result locally due to stacking faults, because the only difference between these 2H and 3R phases is variation in the stacking sequence along the c axis. Following an ABC notation, we use capital letters A, B and C to represent the sulfur layer, and lower case letters a, b and c to refer to Nb layers. For example, the stacking sequence of 2H phase is AbACbCA, which is a ∼12Å period along the c axis; the stacking sequence of 3R phase is AbABcBCaCA to form an ∼18Å period along the c axis. Intergrowth of these two phases can take place at stacking faults or by a shear in the basal plane normal to the c axis.

Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

2012 ◽  
Vol 501 ◽  
pp. 236-241 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah ◽  
Ramadan E. Shaiboub
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Vibrating Sample Magnetometer ◽  
X Ray ◽  
Garnet Phase ◽  
Sol Gel Process ◽  
Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

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