A Photoluminescence Study of Cd Related Centers in InP

1985 ◽  
Vol 46 ◽  
Author(s):  
V. Swaminathan ◽  
V. M. Donnelly ◽  
J. Long
Keyword(s):  
Lower Energy ◽  
Thermal Quenching ◽  
Peak Position ◽  
Shallow Donor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Photoluminescence Study ◽  
Lower Energy Band ◽  
Peak Energy ◽  
Deep Donor

AbstractWe report the results of a low temperature photoluminescence study of Cd related centers in InP. Besides the previously identified 1.365 eV band a new Cd related band is reported. The peak position of this band lies in the energy ranqe 1.2-1.3 eV at 5.5K dependinq upon the excitation intensity. The peak position of the bands shifts to higher energy with increasing excitation intensity but the change in the peak energy per decade chanqe in excitation intensity is much larger (50 meV) for the lower energy band compared to the 1-2 meV shift for the 1.365 eV band. Both bands exhibit thermal quenching of luminescence above lOOK with an activation energy of 54±4 meV which is comparable to the ionization energy for the substitutional Cd acceptor, CdIn. From this we infer that both bands involve the CdIn acceptor in the recombination process. While the excitation dependence of the bands suggests a donor-to-acceptor pair recombinaton for their origin, we present arguments to show that the larger shift of the peak energy of the 1.2-1.3 eV band with excitation intensity is perhaps a consequence of the involvement of a deep donor in its origin as opposed to a shallow donor in the 1.365 eV band. It is suggested that the deep donor is related to Cd and possible centers are discussed.

Photoluminescence Study of Damage Introduced in GaN by Ar- and Kr-Plasmas Etching

2011 ◽  
Vol 1396 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Retsuo Kawakami ◽  
Masahito Niibe ◽  
Atsushi Takeichi ◽  
Takeshi Inaoka ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Luminescence Band ◽  
Shallow Donor ◽  
Acceptor Pair ◽  
Near Surface ◽  
Photoluminescence Study ◽  
Damage Characteristics ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Blue Luminescence Band

ABSTRACTWe investigated, by employing a photoluminescence technique, the etching damage introduced in near-surface regions of GaN by Ar and Kr plasmas and clarified the differences between the damage characteristics of these regions for the two plasma etching cases. For Ar plasma, the shallow donor-acceptor pair emission at ~3.28 eV was significantly weakened; additionally, a broad blue luminescence band arose at approximately ~3.0 eV. In contrast, for Kr plasma under high gas pressure, we found the recovery of the damage to the same level as the as-grown crystallinity. These differences in the damage characteristics for the two plasma etching cases probably depend upon which atom (N or Ga) is preferentially etched in these cases.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

Photoluminescence study of Pr3+ doped CaGa2S4 in wide excitation intensity and temperature range

2021 ◽  
Vol 129 (24) ◽  
pp. 243104
Author(s):  
M. S. Leanenia ◽  
E. V. Lutsenko ◽  
M. V. Rzheutski ◽  
G. P. Yablonskii ◽  
T. G. Naghiyev ◽  
...  
Keyword(s):  
Excitation Intensity ◽  
Photoluminescence Study ◽  
Temperature Range

Thin Film Carbon Layers with Continously Changing Bonding Properties

2007 ◽  
Vol 537-538 ◽  
pp. 207-214
Author(s):  
Gergely Kovách ◽  
Gábor Pető ◽  
Albert Karacs ◽  
M. Veres ◽  
Hajnalka Csorbai ◽  
...  
Keyword(s):  
Lower Energy ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Ion Bombardment ◽  
Peak Position ◽  
Carbon Films ◽  
Laser Deposition ◽  
Energy Part ◽  
Bonding Properties ◽  
Electron Energy Loss

Polycrystalline diamond and diamond-like carbon (DLC) films were deposited by microwave chemical vapor deposition (MW-CVD) and by pulsed laser deposition (PLD) respectively. Ar ion bombardment was used to change the properties of these layers. The sp2 bonds were determined directly by reflected electron energy loss spectroscopy (REELS) and further characterization was made by Raman scattering. The polycrystalline diamond showed only very slight π-π* transition at 6.5 eV, but after Ar ion bombardment strong peak was formed but definitely shifted to lower energy compared to the well known π-π* transition of graphite. The as deposited PLD carbon films showed broad peak around 5eV clearly different than the π-π* transition (6.5eV). After Ar+ ion bombardment the peak was shifted also to lower energy range (4-5eV) with a remaining part at 6.5eV. The lower energy part of the peak can be correlated to the transition of sp3 sites, while this change in peak position was not detectable after ion bombardment of the reference HOPG sample, which does not contain sp3 hybridized carbon atoms.

Optical and structural prorerties of InAs epilayer on graded InGaAs

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Peak Position ◽  
Excitation Intensity ◽  
Total Thickness ◽  
Ingaas Layer ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

Excitation Power Dependence of Photoluminescence in CIB and FIB Implanted Superlattices

1991 ◽  
Vol 240 ◽  
Author(s):  
A. G. Choo ◽  
H. E. Jackson ◽  
P. Chen ◽  
A. J. Steckl ◽  
V. Gupta ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Peak Position ◽  
Excitation Power ◽  
Excitation Intensity ◽  
Power Dependence ◽  
Photoluminescence Spectra ◽  
Multiple Scan ◽  
Donor Acceptor ◽  
Low Temperature Photoluminescence

ABSTRACTLow temperature photoluminescence spectra have been used to characterize conventional ion beam (CIB) and focused ion beam (FIB) implanted superlattices. The excitation dependence of the single scan FIB is found to be significantly different from CIB and multiple scan FIB implantations which are similar. The peak position of the donor-acceptor transition is observed to change to higher energies significantly slower with excitation intensity for the single scan FIB case when compared to the multiple scan FIB and CIB cases. Simple models to describe these effects are briefly discussed.

Radiative Recombination between Two Dimensional Electron Gas and Photoexcited Holes in Modulation-doped AlxGa1−xN/GaN Heterostructures

1999 ◽  
Vol 595 ◽  
Author(s):  
B. Shen ◽  
T. Someya ◽  
O. Moriwaki ◽  
Y. Arakawa
Keyword(s):  
Radiative Recombination ◽  
Electron Gas ◽  
Excitation Intensity ◽  
Energy Separation ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Peak Energy ◽  
Dimensional Electron Gas ◽  
Increasing Temperature

AbstractPhotoluminescence (PL) of modulation-doped Al0.22Ga0.78N/GaN heterostructures was investigated. The PL peak related to recombination between the two-dimensional electron gases (2DEG) and photoexcited holes is located at 3.448 eV at 40 K, which is 45 meV below the free excitons (FE) emission in GaN. The peak can be observed at temperatures as high as 80 K. The intensity of the 2DEG PL peak is enhanced significantly by incorporating a thin Al0.12Ga0.88N layer into the GaN layer near the heterointerface to suppress the diffusion of photoexcited holes. The energy separation of the 2DEG peak and the GaN FE emission decreases with increasing temperature. Meanwhile, the 2DEG peak energy increases with increasing excitation intensity. These results are attributed to the screening effect of electrons on the bending of the conduction band at the heterointerface, which becomes stronger when temperature or excitation intensity is increased.

Upconversion luminescence properties of Li+-doped ZnWO4:Yb,Er

2008 ◽  
Vol 23 (8) ◽  
pp. 2078-2083 ◽  
Author(s):  
Xi-xian Luo ◽  
Wang-he Cao
Keyword(s):  
Liquid Phase ◽  
Calcination Temperature ◽  
Crystal Field ◽  
Lower Energy ◽  
Upconversion Luminescence ◽  
Peak Position ◽  
Liquid Phase Sintering ◽  
Red Shift ◽  
Luminescence Properties ◽  
Sintering Process

Upconversion luminescence (UPL) characteristics and effects of Li+ ion on the UPL of ZnWO4:Yb,Er polycrystalline phosphors were investigated. It was shown that introduction of Li+ ions could reduce the calcination temperature by about 200 °C and increase the crystallinity of ZnWO4:Yb,Er by a liquid-phase sintering process via formation of Li2WO4 and other intermediates. UPL efficiency is remarkably promoted by Li+ ions. Moreover, the UPL spectrum of Li+-doped ZnWO4:Yb,Er presents a red shift, and the strongest peak position shifts from 553 to 559 nm. These can be attributed to a shift in the 4f level barycenter to lower energy, which results from lowering of the symmetry of the crystal field around Er3+.

scholarly journals Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films

2000 ◽  
Vol 5 (S1) ◽  
pp. 796-802 ◽  
Author(s):  
Yong-Hoon Cho ◽  
G. H. Gainer ◽  
J. B. Lam ◽  
J. J. Song ◽  
W Yang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Stokes Shift ◽  
Energy Shift ◽  
Peak Position ◽  
Time Resolved ◽  
Temperature Range ◽  
Al Content ◽  
Peak Energy ◽  
Emission Behavior ◽  
Pl Intensity

We present a comprehensive study of the optical characteristics of (Al, In)GaN epilayers measured by photoluminescence (PL), integrated PL intensity, and time-resolved PL spectroscopy. For not only InGaN, but also AlGaN epilayers with large Al content, we observed an anomalous PL temperature dependence: (i) an “S-shaped” PL peak energy shift (decrease-increase-decrease) and (ii) an “inverted S-shaped” full width at half maximum (FWHM) change (increase-decrease-increase) with increasing temperature. Based on time-resolved PL, the S shape (inverted S shape) of the PL peak position (FWHM) as a function of temperature, and the much smaller PL intensity decrease in the temperature range showing the anomalous emission behavior, we conclude that strong localization of carriers occurs in InGaN and even in AlGaN with rather high Al content. We observed that the following increase with increasing Al content in AlGaN epilayers: (i) a Stokes shift between the PL peak energy and the absorption edge, (ii) a redshift of the emission with decay time, (iii) the deviations of the PL peak energy, FWHM, and PL intensity from their typical temperature dependence, and (iv) the corresponding temperature range of the anomalous emission behavior. This indicates that the band-gap fluctuation responsible for these characteristics is due to energy tail states caused by non-random inhomogeneous alloy potential variations enhanced with increasing Al content.

scholarly journals Photoluminescence of GaN Grown by Molecular Beam Epitaxy on Freestanding GaN Template

2002 ◽  
Vol 722 ◽  
Author(s):  
M. A. Reshchikov ◽  
F. Yun ◽  
D. Huang ◽  
L. He ◽  
H. Morkoç ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Broad Band ◽  
Shallow Donor ◽  
Binding Energies ◽  
Main Peak ◽  
Acceptor Pair ◽  
Pl Spectra ◽  
Frequency Plasma ◽  
Donor Acceptor

AbstractWe studied photoluminescence (PL) of GaN layers grown by molecular beam epitaxy on freestanding high-quality GaN templates. The layers with thickness of ∼ 1 νm were grown under Ga-rich conditions using radio-frequency plasma as a nitrogen source. The PL spectra from both the epilayer and the substrate contain a plethora of very sharp peaks related to excitonic transitions. Through the analysis of the excitonic part of the spectra, we have identified two shallow donors with the binding energies of 28.8 and 32.6 meV, attributed to SiGa and ON, respectively. The PL spectra involved also emissions due to shallow donor-acceptor pair transitions with the main peak at 3.26 eV and a broad band peaking at ∼2.5 - 2.6 eV (green band). The green bands in the GaN substrate and GaN overgrown layer have different energy positions invoking the suggestion that they must have their genesis in different defect centers.

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