Photoluminescence study of Pr3+ doped CaGa2S4 in wide excitation intensity and temperature range

2021 ◽  
Vol 129 (24) ◽  
pp. 243104
Author(s):  
M. S. Leanenia ◽  
E. V. Lutsenko ◽  
M. V. Rzheutski ◽  
G. P. Yablonskii ◽  
T. G. Naghiyev ◽  
...  
Keyword(s):  
Excitation Intensity ◽  
Photoluminescence Study ◽  
Temperature Range

Photoluminescence of Ca4Ga2S7:Eu2+ in wide excitation intensity and temperature range

2021 ◽  
pp. 2150392
Author(s):  
B. D. Urmanov ◽  
M. S. Leanenia ◽  
G. P. Yablonskii ◽  
O. B. Taghiyev ◽  
K. O. Taghiyev ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Excitation ◽  
Excitation Intensity ◽  
Temperature Measurements ◽  
Constant Time ◽  
Photoluminescence Properties ◽  
Temperature Range ◽  
Chalcogenide Semiconductors ◽  
Time Frames

Photoluminescence properties of [Formula: see text] chalcogenide semiconductors have been studied under the impulse laser excitation in the range of 10–105 W/cm2 at room temperature. This study has shown that as a result of excitation, photoluminescence of [Formula: see text] is characterized by the emission in the interval of 450–575 nm with significant domination in the spectra line at 660 nm. Photoluminescence of [Formula: see text] quenches at wavelengths of 560 nm and 660 nm with constant time frames 258 ns and 326 ns, respectively. Moreover, the temperature measurements of photoluminescence were performed on the samples in the temperature range of 10–300 K.

Polarization photoluminescence study of the complex VGaTeAs in n-type GaAs in the temperature range 77–230 K

1997 ◽  
Vol 31 (9) ◽  
pp. 908-915 ◽  
Author(s):  
A. A. Gutkin ◽  
M. A. Reshchikov ◽  
V. E. Sedov
Keyword(s):  
Photoluminescence Study ◽  
Temperature Range

A Photoluminescence Study of Cd Related Centers in InP

1985 ◽  
Vol 46 ◽  
Author(s):  
V. Swaminathan ◽  
V. M. Donnelly ◽  
J. Long
Keyword(s):  
Lower Energy ◽  
Thermal Quenching ◽  
Peak Position ◽  
Shallow Donor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Photoluminescence Study ◽  
Lower Energy Band ◽  
Peak Energy ◽  
Deep Donor

AbstractWe report the results of a low temperature photoluminescence study of Cd related centers in InP. Besides the previously identified 1.365 eV band a new Cd related band is reported. The peak position of this band lies in the energy ranqe 1.2-1.3 eV at 5.5K dependinq upon the excitation intensity. The peak position of the bands shifts to higher energy with increasing excitation intensity but the change in the peak energy per decade chanqe in excitation intensity is much larger (50 meV) for the lower energy band compared to the 1-2 meV shift for the 1.365 eV band. Both bands exhibit thermal quenching of luminescence above lOOK with an activation energy of 54±4 meV which is comparable to the ionization energy for the substitutional Cd acceptor, CdIn. From this we infer that both bands involve the CdIn acceptor in the recombination process. While the excitation dependence of the bands suggests a donor-to-acceptor pair recombinaton for their origin, we present arguments to show that the larger shift of the peak energy of the 1.2-1.3 eV band with excitation intensity is perhaps a consequence of the involvement of a deep donor in its origin as opposed to a shallow donor in the 1.365 eV band. It is suggested that the deep donor is related to Cd and possible centers are discussed.

Nickel-Related Optical Centers in Hpht Treated Synthetic Diamonds: Photoluminescence Study

1999 ◽  
Vol 560 ◽  
Author(s):  
I.N. Kupriyanov ◽  
V.A. Gusev ◽  
Yu.N. Pal'yanov ◽  
Yu.M. Borzdov
Keyword(s):  
Photoluminescence Excitation ◽  
Annealing Behavior ◽  
Photoluminescence Study ◽  
Preliminary Results ◽  
Temperature Range ◽  
Synthetic Diamonds ◽  
First Time

ABSTRACTThe results of a photoluminescence (PL) study of synthetic diamonds annealed over the temperature range 1500-2500°C are presented. For nickel- and nitrogen-containing diamonds a number of new, previously undocumented PL systems with zero-phonon lines (ZPLs) at 598.5, 622.6, 638.9, 752.1 and 877.2 nm has been found. Photoluminescence excitation (PLE) spectra for PL systems with ZPLs at 727.1 and 746.6 nm have been measured for the first time. Preliminary results on annealing behavior of the PL centers have been obtained. Of all the PL systems observed only that ones with ZPLs at 752.1 and 793.0 nm together with the S2 and S3 optical centers are present in diamonds annealed at temperatures higher than 2200°C.

scholarly journals Effect of the Temperature of NaYF4 : Er,Yb Upсonversion Particles on the Formation of Luminescence

2020 ◽  
Vol 20 (4) ◽  
pp. 306-310
Author(s):  
Elena A. Sagaidachnaya ◽  
◽  
Vyacheslav I. Kochubey ◽  
Keyword(s):  
Luminescence Intensity ◽  
Upconversion Luminescence ◽  
Excitation Intensity ◽  
Luminescence Spectra ◽  
Hexagonal Prism ◽  
Green Band ◽  
Green Luminescence ◽  
Temperature Range

The intensity of upconversion luminescence depends nonlinearly on the excitation intensity. The aim of this work is to study the effect of the temperature of NaYF4:Er,Yb upconversion particles on the dependence of the luminescence intensity on the excitation intensity. The synthesized particles were observed to have the shape of a hexagonal prism with a width of about 440 nm and a height of 445 nm. The upconversion luminescence spectra were obtained in the temperature range of 22–55° C with the excitation intensity in the range of 1.5–9.4 W/cm2. The obtained results show the green-band luminescence photons can be generated by means of two-step and three-step mechanisms: the contribution of these mechanisms depends on the temperature of the particles. As the temperature increases, the contribution of the three-stage mechanism of green luminescence excitation is enhanced.

scholarly journals The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
V. Ya. Degoda ◽  
M. Alizadeh ◽  
N. O. Kovalenko ◽  
N. Yu. Pavlova
Keyword(s):  
Theoretical Analysis ◽  
Single Crystals ◽  
Radiation Intensity ◽  
Excitation Intensity ◽  
Semiconductor Material ◽  
X Ray ◽  
Temperature Range ◽  
Deep Traps ◽  
Shallow Traps

This work studies the conductivity and luminescence of ZnSe single crystals under X-ray irradiation. The experimentally derived lux-ampere characteristics of the X-ray conductivity for ZnSe crystals have a sublinear behavior within the temperature range from 8 to 420 K. The theoretical analysis of the conductivity kinetics at X-ray excitation showed that the value of maximum accumulated lightsum at deep traps does not depend on radiation intensity. However, regarding shallow and phosphorescent traps, the strength of accumulated lightsum depends on the intensity of exciting irradiation. Specifically, these shallow traps and phosphorescent traps cause the sublinear behavior of lux-ampere characteristics in the semiconductor material.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

Domain coarsening by grain boundary migration in ordered Ni4Mo

1986 ◽  
Vol 44 ◽  
pp. 560-561
Author(s):  
K. Vasudevan ◽  
H. P. Kao ◽  
C. R. Brooks ◽  
E. E. Stansbury
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Short Range ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Rapid Cooling ◽  
Temperature Range ◽  
Fee Structure ◽  
Domain Coarsening ◽  
Boundary Reaction

The Ni4Mo alloy has a short-range ordered fee structure (α) above 868°C, but transforms below this temperature to an ordered bet structure (β) by rearrangement of atoms on the fee lattice. The disordered α, retained by rapid cooling, can be ordered by appropriate aging below 868°C. Initially, very fine β domains in six different but crystallographically related variants form and grow in size on further aging. However, in the temperature range 600-775°C, a coarsening reaction begins at the former α grain boundaries and the alloy also coarsens by this mechanism. The purpose of this paper is to report on TEM observations showing the characteristics of this grain boundary reaction.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

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