Room temperature H2 detection based on Pd/SiNWs/p-Si Schottky diode structure

2016 ◽  
Vol 227 ◽  
pp. 515-523 ◽  
Author(s):  
L.S. Zhu ◽  
J. Zhang ◽  
X.W. Xu ◽  
Y.Z. Yu ◽  
X. Wu ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Diode Structure

Porous Silicon Organic Vapor and Humidity Sensor

1996 ◽  
Vol 459 ◽  
Author(s):  
M. C. Poon ◽  
J.K.O. Sin ◽  
H. Wong ◽  
P. G. Han ◽  
W. H. Kwok ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Response Time ◽  
Schottky Diode ◽  
Room Temperature ◽  
Humidity Sensor ◽  
Ethanol Vapor ◽  
Electrical Contacts ◽  
Diode Structure ◽  
Organic Vapor ◽  
Humidity Change

ABSTRACTThis paper presents new organic vapor sensitive device using anodized porous silicon (PS). The sensor has aluminum (Al)/PS/p-Si/Al Schottky diode structure and sensitivity at room temperature in 2600 ppm acetone, methanol, 2-propanol and ethanol is about 4, 5, 10 and 40 times respectively. The sensitivity in 800–2600 ppm ethanol vapor is 2 to 40 times. The diode sensor can be converted into an Al/PS/Al resistor sensor by switching the electrical contacts, and the sensitivity is about 500 times for a humidity change of 43–75%. All sensors have response time of about 0.5 min. The sensitivity is stable with time and the PS sensor can be integrated into VLSI Si devices to form novel microelectronic systems.

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

Room Temperature Processed Ultrahigh-Frequency Indium-Gallium–Zinc-Oxide Schottky Diode

2016 ◽  
Vol 37 (4) ◽  
pp. 389-392 ◽  
Author(s):  
Jiawei Zhang ◽  
Hanbin Wang ◽  
Joshua Wilson ◽  
Xiaochen Ma ◽  
Jidong Jin ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Schottky Diode ◽  
Room Temperature ◽  
Ultrahigh Frequency ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium

scholarly journals Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

2002 ◽  
Vol 25 (3) ◽  
pp. 245-248
Author(s):  
K. F. Yarn
Keyword(s):  
Schottky Diode ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Differential Resistance ◽  
Tunneling Effect ◽  
Peak Current Density ◽  
Interband Tunneling ◽  
First Time ◽  
Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

Modeling and Simulations of Pd/n-ZnO Schottky Diode and its Comparison with Measurements

2009 ◽  
Vol 79-82 ◽  
pp. 1317-1320 ◽  
Author(s):  
S Faraz ◽  
Haida Noor ◽  
M. Asghar ◽  
Magnus Willander ◽  
Qamar-ul Wahab
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Depletion Region ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Recombination Current ◽  
Experimental Values ◽  
Iv Curves ◽  
The Ideal

Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitance-voltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.

scholarly journals Comparative study on gas sensing by a Schottky diode electrode prepared with graphene–semiconductor–polymer nanocomposites

RSC Advances ◽  
2019 ◽  
Vol 9 (20) ◽  
pp. 11484-11492 ◽  
Author(s):  
Md Rokon Ud Dowla Biswas ◽  
Won-Chun Oh
Keyword(s):  
Comparative Study ◽  
Gas Sensor ◽  
Polymer Nanocomposites ◽  
Schottky Diode ◽  
Room Temperature ◽  
Gas Sensing ◽  
Atmospheric Conditions

This paper studies the performance of a gas sensor based on an organic/inorganic diode for ammonia (NH3), nitrogen (N2) & oxygen (O2) sensing under atmospheric conditions at room temperature and different humidity levels.

Room temperature ultrafast InGaAs Schottky diode based detectors for terahertz spectroscopy

2019 ◽  
Vol 99 ◽  
pp. 240-247 ◽  
Author(s):  
Nart Daghestani ◽  
Kai Parow-Souchon ◽  
Diego Pardo ◽  
Hairui Liu ◽  
Nick Brewster ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Terahertz Spectroscopy

Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

2008 ◽  
Vol 63 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Ahmet Faruk Ozdemir ◽  
Adnan Calik ◽  
Guven Cankaya ◽  
Osman Sahin ◽  
Nazim Ucar
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Vickers Microhardness ◽  
Schottky Barrier Diodes ◽  
Microhardness Test ◽  
Current Voltage

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

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