Structure and Mechanical Properties of Titanium Nitride, Zirconium Nitride, and Chromium Nitride Films by Reactive Magnetron-Sputter Deposition

1996 ◽  
Vol 458 ◽  
Author(s):  
W.-H. Soe ◽  
T. Kitagaki ◽  
H. Ueda ◽  
N. Shima ◽  
M. Otsuka ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Sputter Deposition ◽  
Zirconium Nitride ◽  
Chromium Nitride ◽  
Reactive Magnetron ◽  
Nano Indentation ◽  
Low Load ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Hardness Values

ABSTRACTTiN, ZrN, and CrN films were grown by reactive magnetron sputtering on WC-Co sintered hard alloy substrates. Hardness and elastic modulus were measured by nano-indentation tester with low load on tip at 200 mgf. Hardness values were shown the higher value the thinner film thickness due to stress in the films.

Ion-assisted low-temperature (≤ 150 °C) epitaxial growth of TiN on Cu by reactive magnetron sputter deposition

1996 ◽  
Vol 287 (1-2) ◽  
pp. 87-92 ◽  
Author(s):  
H. Ljungcrantz ◽  
S. Benhenda ◽  
G. Håkansson ◽  
I. Ivanov ◽  
L. Hultman ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Sputter Deposition ◽  
Reactive Magnetron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

1993 ◽  
Vol 8 (10) ◽  
pp. 2613-2616 ◽  
Author(s):  
Jennifer Ross ◽  
Mike Rubin ◽  
T.K. Gustafson
Keyword(s):  
Single Crystal ◽  
Growth Conditions ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Reactive Sputter Deposition ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Aln Buffer

We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AlN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550 and 620 °C. However, using a high temperature 200 Å AlN buffer layer epitaxial GaN is produced. Crystal structure and quality are measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AlN buffer layers by any growth technique. Simple AlN/GaN heterostructures grown by rf reactive sputter deposition on (111) GaAs are also demonstrated.

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