Enlarged Parameter Space by Use of VHF-GD for Deposition of Thin Type μc-Si:H Films

1996 ◽  
Vol 452 ◽  
Author(s):  
P. Torres ◽  
J. Meier ◽  
R. Flückiger ◽  
H. Keppner ◽  
A. Shah
Keyword(s):  
Gas Phase ◽  
High Frequency ◽  
Low Temperatures ◽  
High Electrical Conductivity ◽  
Very High Frequency ◽  
Transparent Films ◽  
Optically Transparent ◽  
Plasma Excitation ◽  
P Type ◽  
Very High

AbstractIn this paper new results on thin p - type μc-Si:H films deposited at low temperatures of 170 °C by the Very High Frequency - Glow Discharge technique (VHF-GD) are presented. The “tolerated” amount of diborane added in the gas phase ratio as well as the influence of three different plasma excitation frequencies (70, 100 and 130 MHz) in obtaining high electrical conductivity are investigated. The goal is to optimise very thin (< 400 Å) and hence optically transparent films by maintaining high conductivities for the application as window layers of solar cells.

Fabrication and Characterization of Cold Electron Emitter Based on Nanocrystalline Silicon Dots

2000 ◽  
Vol 638 ◽  
Author(s):  
K. Nishiguchi ◽  
X. Zhao ◽  
S. Oda
Keyword(s):  
Gas Phase ◽  
High Frequency ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Cold Electron ◽  
Very High Frequency ◽  
Electron Emitter ◽  
Fabrication And Characterization ◽  
Very High

AbstractA cold electron emitter has been made from nanocrystalline silicon (nc-Si) dots. Nc-Si dots are formed in the gas phase by very-high-frequency (VHF) plasma enhanced chemical vapor deposition (CVD). Electrons, accelerated by electric field, are ballistically transported through nc-Si and SiO2, then extracted into vacuum. Electron emission efficiency is optimized through varying nc-Si film thickness, surface roughness, and by short thermal oxidation.

Large Grain Size and High Deposition Rate for Microcrystalline Silicon Prepared by VHF-GD

1994 ◽  
Vol 358 ◽  
Author(s):  
P. Hapke ◽  
F. Finger ◽  
M. Luysberg ◽  
R. Carius ◽  
H. Wagner
Keyword(s):  
Grain Size ◽  
Deposition Rate ◽  
High Frequency ◽  
Excitation Frequency ◽  
Chemical Vapour ◽  
High Deposition Rate ◽  
Very High Frequency ◽  
Deposition Parameters ◽  
Plasma Excitation ◽  
Very High

ABSTRACTThe growth mechanism and material properties of -type µc-Si:H prepared with plasma enhanced chemical vapour deposition in the very high frequency range is investigated. By increasing the plasma excitation frequency the grain size, deposition rate and Hall mobility can be simultaneously increased without having to adjust other deposition parameters in particular the temperature. This effect is explained by an enhanced selective etching of amorphous tissue and grain boundary regions together with a sufficient supply of growth species at high frequency plasmas.

Structural, Optical and Electrical Properties of μc-SiC:H Thin Films Deposited by the VHF-GD

1994 ◽  
Vol 358 ◽  
Author(s):  
Roger Fluckiger ◽  
J. Meier ◽  
A. Shah ◽  
J. Pohl ◽  
M. Tzolov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gas Phase ◽  
High Frequency ◽  
Input Power ◽  
Optical And Electrical Properties ◽  
Very High Frequency ◽  
Deposition Parameters ◽  
Temperature And Pressure ◽  
The Individual ◽  
Very High

ABSTRACTIn the present paper the authors present new results on thin (μc-SiC:H films deposited at low temperatures by the Very High Frequency - Glow Discharge technique (VHF-GD) at 70 MHz. The individual effects of each of the deposition parameters (methane and diborane gas phase ratios, input power, deposition temperature and pressure) are investigated with respect to the structural, optical and electrical properties of the films; the goal being the growth of optimised, thin μc-SiC:H layers for use as highly conductive and high gap window layers in solar cells.

Development of p-type microcrystalline silicon carbon alloy films by the very high frequency plasma-enhanced chemical vapor deposition technique

2001 ◽  
Vol 16 (7) ◽  
pp. 2130-2135
Author(s):  
Tapati Jana ◽  
Arup Dasgupta ◽  
Swati Ray
Keyword(s):  
Substrate Temperature ◽  
High Frequency ◽  
Excitation Frequency ◽  
Deposition Technique ◽  
Very High Frequency ◽  
Silicon Carbon ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Plasma Excitation ◽  
Very High

We developed p-type μc-silicon carbon alloy thin films by the very high frequency plasma-enhanced chemical vapour deposition technique using a SiH4, H2, CH4, and B2H6 gas mixture at low power (55 mW/cm2) and low substrate temperatures (150–250 °C). Effects of substrate temperature and plasma excitation frequency on the optoelectronic and structural properties of the films were studied. A film with conductivity 5.75 Scm−1 and 1.93 eV optical gap (E04) was obtained at a low substrate temperature of 200 °C using 63.75 MHz plasma frequency. The crystalline volume fractions of the films were estimated from the Raman spectra. We observed that crystallinity in silicon carbon alloy films depends critically on plasma excitation frequency. When higher power (117 mW/cm2) at 180 °C with 66 MHz frequency was applied, the deposition rate of the film increased to 50.7 Å/min without any significant change in optoelectronic properties.

Engineering soft magnetic properties by doping ions in low-fired M-type hexaferrite with Bi–Co–Ti substitution

RSC Advances ◽  
2015 ◽  
Vol 5 (111) ◽  
pp. 91382-91388 ◽  
Author(s):  
Yang Bai ◽  
Wenjie Zhang ◽  
Lijie Qiao ◽  
Jiangli Cao
Keyword(s):  
Magnetic Properties ◽  
High Frequency ◽  
Low Temperatures ◽  
Soft Magnetic Properties ◽  
Frequency Range ◽  
Soft Magnetic ◽  
Very High Frequency ◽  
Co Doping ◽  
Ti Substitution ◽  
Very High

M-type hexaferrite with appropriate Co, Ti and Bi co-doping has excellent soft magnetic properties in a very high frequency range and can be sintered at low temperatures.

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