Porous Microcrystalline Silicon Solar Cells

1996 ◽  
Vol 452 ◽  
Author(s):  
S. P. Duttagupta ◽  
S. K. Kurinec ◽  
P. M. Fauchet
Keyword(s):  
Fill Factor ◽  
Series Resistance ◽  
Spectral Response ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Photovoltaic Devices ◽  
Microcrystalline Silicon ◽  
Crystal Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics

AbstractWe report the fabrication of photovoltaic devices by the anodization of microcrystalline silicon films on single crystal silicon substrates. The porosity of the films was varied from 20% to 60% by changing the anodization conditions. An unetched μc-Si based device was used for reference. The influence of the porosity on the series resistance (Rs), the reflectance, and the spectral response of the devices was studied in detail. In order to determine Rs, the current-voltage characteristics were analyzed, both in the dark and under illumination. We observed that the value of Rs increased from 3.1 Ω to 97 Ω and the value of the reflectance decreased from 24% to 7% when the porosity increased from 20% to 60%. Initially, an optimum device performance (fill factor of 0.53 and efficiency of 7.2%) was achieved for a porosity of 40%, which was about a 40% improvement as compared to the reference (unetched) μc-si based device. Due to a further reduction in Rs by using an intermediate ITO layer and a superior grid-contact architecture, a device efficiency of 10% has been recently achieved.

Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

2010 ◽  
Vol 645-648 ◽  
pp. 239-242 ◽  
Author(s):  
Takuro Tomita ◽  
M. Iwami ◽  
M. Yamamoto ◽  
M. Deki ◽  
Shigeki Matsuo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
Single Crystal ◽  
Specific Resistance ◽  
Single Crystal Silicon ◽  
Metal Contacts ◽  
Crystal Silicon ◽  
Current Voltage ◽  
Fs Laser ◽  
Current Voltage Characteristics

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltage characteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 m was obtained for fs-laser modified area.

scholarly journals Влияние легирования слоев брэгговских отражателей на электрические свойства InGaAs/GaAs метаморфных фотопреобразователей

2020 ◽  
Vol 54 (4) ◽  
pp. 400
Author(s):  
В.М. Емельянов ◽  
Н.А. Калюжный ◽  
С.А. Минтаиров ◽  
М.В. Нахимович ◽  
Р.А. Салий ◽  
...  
Keyword(s):  
Fill Factor ◽  
Series Resistance ◽  
Indium Content ◽  
Bragg Reflectors ◽  
Current Voltage Characteristic ◽  
Sharp Rise ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics ◽  
Silicon Doped

Abstract The current–voltage characteristics of In_ x Ga_1 –_ x As/GaAs metamorphic photovoltaic converters with built-in n -InGaAs/InAlAs Bragg reflectors are studied at an indium content of x = 0 . 025–0 . 24. The series resistance of the heterostructures is measured in the temperature range from 90 to 400 K. It is found that a sharp rise in the resistance of silicon-doped reflectors with an increasing fraction of In is due to weak activation of the donor impurity in InAlAs– n :Si layers. As a result, the energy barriers for majority carriers are formed in the latter, with a height of 0 . 32–0 . 36 eV and a substantial width. To suppress this effect, the technology of the Te doping of n -InGaAs/InAlAs Bragg reflectors is developed, which reduces the series resistance by five orders of magnitude. This makes it possible to keep the fill factor of the current–voltage characteristic above 80% up to current densities of 2 A/cm^2. Values exceeding 85%, achieved for the quantum efficiency, indicate that the “memory” and tellurium segregation effects characteristic of this kind of impurity are suppressed.

scholarly journals Thickness Effect on F8T2/C60Bilayer Photovoltaic Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-5
Author(s):  
Natasha A. D. Yamamoto ◽  
Andreia G. Macedo ◽  
Lucimara S. Roman
Keyword(s):  
Thermal Treatment ◽  
Power Conversion Efficiency ◽  
Variable Thickness ◽  
Series Resistance ◽  
Power Conversion ◽  
Thickness Effect ◽  
Photovoltaic Devices ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Bilayer Devices

Copolymers based on fluorene-thiophene units have presented promising efficiencies in photovoltaic devices applications. They present good transport properties mainly after thermal treatment of the polymer films. Here, we investigate the properties of bilayer devices formed by the heterojunction of the polymer F8T2 with variable thickness and the fullerene. The series resistance of the equivalent circuit associated with the device increases as the polymer film gets thicker. The current-voltage characteristics of the bilayer devices follow the Mott-Gurney law of SCLC. For the best performing device we measured 2.1% of power conversion efficiency.

scholarly journals Транспорт и фоточувствительность в структурах: композитный слой из наночастиц кремния и золота на p-Si

2018 ◽  
Vol 52 (9) ◽  
pp. 1071
Author(s):  
М.П. Тепляков ◽  
О.С. Кен ◽  
Д.Н. Горячев ◽  
О.М. Сресели
Keyword(s):  
Composite Layer ◽  
Single Crystal Silicon ◽  
Current Transfer ◽  
Crystal Silicon ◽  
Composite Layers ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Transfer Mechanisms

AbstractThe temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with p -type conductivity are investigated. The current transfer mechanisms in the structures and their influence on the photosensitivity of structures with different amounts of gold in the composite layer are determined.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

Solar Cell Manufacturing Method with the Structure of the Bulk Heterojunction Based on Organic Semiconductors with a Direct Architecture

2016 ◽  
Vol 845 ◽  
pp. 224-227 ◽  
Author(s):  
Danila Saranin ◽  
Marina Orlova ◽  
Sergey Didenko ◽  
Oleg Rabinovich ◽  
Andrey Kryukov
Keyword(s):  
Solar Cells ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Fill Factor ◽  
Research Output ◽  
Bulk Heterojunction ◽  
Organic Basis ◽  
Manufacturing Method ◽  
Current Voltage ◽  
Current Voltage Characteristics

This article presents the results of research output voltage characteristics of solar cells on an organic basis with the use of P3HT: PCBM system. There were produced organic solar cells in a coating in air, current-voltage characteristics were measured. It was determined the characteristic influence of a substrate cleaning and annealing temperature of layers applied on fill factor and conversion efficiency.

A Current Conduction Mechanism in Laser Recrystallized Silicon Metal-Oxide-Semiconductor Transistors

1983 ◽  
Vol 23 ◽  
Author(s):  
Han-Sheng Lee
Keyword(s):  
Conduction Mechanism ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
Mos Transistors ◽  
Crystal Silicon ◽  
Ion Laser ◽  
Argon Ion ◽  
A Current

ABSTRACTN-channel MOS transistors were fabricated on silicon films that had been recrystallized by an argon ion laser at different power levels. These transistors showed electrical characteristics similar, but somewhat inferior to those devices fabricated on single crystal silicon substrates. These differences are attributed to the presence of trapping states at the grain boundaries of the crystallites in the recrystallized silicon. A coulombic scattering model is presented to explain these differences. In the case of films annealed at low laser power, an additional factor of nonuniform trap state distribution is invoked to explain device characteristics. This model provides an adequate explanation for the observed transport properties of transistors fabricated from recrystallized silicon films.

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