scholarly journals Thickness Effect on F8T2/C60Bilayer Photovoltaic Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-5
Author(s):  
Natasha A. D. Yamamoto ◽  
Andreia G. Macedo ◽  
Lucimara S. Roman
Keyword(s):  
Thermal Treatment ◽  
Power Conversion Efficiency ◽  
Variable Thickness ◽  
Series Resistance ◽  
Power Conversion ◽  
Thickness Effect ◽  
Photovoltaic Devices ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Bilayer Devices

Copolymers based on fluorene-thiophene units have presented promising efficiencies in photovoltaic devices applications. They present good transport properties mainly after thermal treatment of the polymer films. Here, we investigate the properties of bilayer devices formed by the heterojunction of the polymer F8T2 with variable thickness and the fullerene. The series resistance of the equivalent circuit associated with the device increases as the polymer film gets thicker. The current-voltage characteristics of the bilayer devices follow the Mott-Gurney law of SCLC. For the best performing device we measured 2.1% of power conversion efficiency.

Porous Microcrystalline Silicon Solar Cells

1996 ◽  
Vol 452 ◽  
Author(s):  
S. P. Duttagupta ◽  
S. K. Kurinec ◽  
P. M. Fauchet
Keyword(s):  
Fill Factor ◽  
Series Resistance ◽  
Spectral Response ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Photovoltaic Devices ◽  
Microcrystalline Silicon ◽  
Crystal Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics

AbstractWe report the fabrication of photovoltaic devices by the anodization of microcrystalline silicon films on single crystal silicon substrates. The porosity of the films was varied from 20% to 60% by changing the anodization conditions. An unetched μc-Si based device was used for reference. The influence of the porosity on the series resistance (Rs), the reflectance, and the spectral response of the devices was studied in detail. In order to determine Rs, the current-voltage characteristics were analyzed, both in the dark and under illumination. We observed that the value of Rs increased from 3.1 Ω to 97 Ω and the value of the reflectance decreased from 24% to 7% when the porosity increased from 20% to 60%. Initially, an optimum device performance (fill factor of 0.53 and efficiency of 7.2%) was achieved for a porosity of 40%, which was about a 40% improvement as compared to the reference (unetched) μc-si based device. Due to a further reduction in Rs by using an intermediate ITO layer and a superior grid-contact architecture, a device efficiency of 10% has been recently achieved.

scholarly journals A Physics-Based Analytical Model for Current–Voltage Characteristics of Perovskite Solar Cells Incorporating Bulk Recombination

Energies ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3868
Author(s):  
M. Zahangir Kabir
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Power Conversion Efficiency ◽  
Analytical Model ◽  
Conversion Efficiency ◽  
Carrier Transport ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
Current Voltage ◽  
Current Voltage Characteristics

A physics-based compact analytical model for studying the current–voltage characteristics of perovskite solar cells has been proposed by considering the external voltage-dependent carrier transport, exponential photon absorption, and bulk charge carrier recombination. The explicit analytical expressions for both the forward dark and photocurrents in perovskite solar cells are derived. The current in the external circuit is calculated considering the actual solar spectrum. The mathematical models are verified and useful physical parameters are extracted by comparing the model calculations with the published experimental results on various perovskite solar cells. The proposed model shows excellent agreement with the experimental results. The power conversion efficiency can be improved further by enhancing the carrier transport in the perovskite layer. The improvement in charge carrier transport enhances the fill factor and hence the power conversion efficiency.

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

scholarly journals Contactless Determination of Optimal Chloride Concentration for Power Conversion Efficiency in CH3NH3Pb(Cl,I)3 Using Photoluminescence Spectroscopy

Photonics ◽  
2021 ◽  
Vol 8 (10) ◽  
pp. 412
Author(s):  
Takaho Asai ◽  
Seigo Ito ◽  
Takayuki Makino
Keyword(s):  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Power Conversion ◽  
Chloride Concentration ◽  
Spectroscopic Characterization ◽  
Voltage Measurement ◽  
Current Voltage ◽  
Non Destructive ◽  
Pl Quenching

We applied room-temperature photoluminescence (PL) spectroscopy for the compositional engineering of a CH3NH3Pb(Cl,I)3 light harvester in an alloy-based perovskite solar cell. This spectroscopic characterization determines the optimal Cl concentration where the power conversion efficiency shows its maximum in a contactless and non-destructive manner. The PL quenching ratio evaluated from the comparative PL studies between the films grown on glass/ZrO2 and SnO2:F/TiO2 substrates exhibited its maximum at a Cl concentration of 10 mol%, which agrees with the Cl concentration determined from the current–voltage measurement-based device performance. We also discuss the possible reasons for the coincidence mentioned above regarding the charge extraction effect induced by Cl incorporation.

Effect of the π-linker on the performance of organic photovoltaic devices based on push–pull D–π–A molecules

2018 ◽  
Vol 42 (14) ◽  
pp. 11458-11464 ◽  
Author(s):  
Hong Chul Lim ◽  
Jang-Joo Kim ◽  
Jyongsik Jang ◽  
Jong-In Hong
Keyword(s):  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Bulk Heterojunction ◽  
Power Conversion ◽  
Organic Photovoltaic ◽  
Photovoltaic Devices ◽  
Organic Photovoltaic Devices ◽  
Higher Power

The bulk heterojunction organic photovoltaic (OPV) devices based on 3T : PC71BM (2 wt%, 1 : 1.75 w/w) exhibited a higher power conversion efficiency of 2.58% than DTT-based OPV devices.

Analytic Modeling of the of J–V Characteristics of Quantum Dot-Based Photovoltaic Cells

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940083
Author(s):  
A. Yu. Saunina ◽  
V. R. Nikitenko ◽  
A. A. Chistyakov ◽  
M. A. Zvaizgne ◽  
A. R. Tameev ◽  
...  
Keyword(s):  
Experimental Data ◽  
Solar Cells ◽  
Quantum Dot ◽  
Power Conversion Efficiency ◽  
Predictive Power ◽  
Diffusion Length ◽  
Power Conversion ◽  
Photovoltaic Cells ◽  
Analytic Model ◽  
Photovoltaic Devices

An analytic model of [Formula: see text]–[Formula: see text] characteristics of photovoltaic devices based on quantum dot (QD) solids is developed. The model yields the upper estimation of the power conversion efficiency and predicts its extremal dependence on the diffusion length of excitons. The predictive power of our model is approved by the comparison with the experimental data for PbS QD-based solar cells.

Sign in / Sign up

Export Citation Format

Share Document