Photoconductivity and Carrier Transport in Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
M. J. Heben ◽  
Y. S. Tsuo
Keyword(s):  
Porous Silicon ◽  
Transport Properties ◽  
Carrier Transport ◽  
Excitation Wavelength ◽  
Tunneling Mechanism ◽  
Photocurrent Spectroscopy ◽  
Current Voltage ◽  
P Type ◽  
Silicon Based ◽  
Photocurrent Spectra

ABSTRACTWe present results from our investigations of the transport properties of p-type Si/porous silicon/Au devices. Current-voltage measurements were performed as a function of temperature from room temperature down to 23K and indicate that a tunneling mechanism governs the transport properties of these devices. Photocurrent spectroscopy measurements were performed as a function of temperature and excitation wavelength and support the conclusion that a tunneling mechanism is operative in these devices. The external quantum efficiencies of our porous-silicon-based structures can be greater than 20%, and the shape of the photocurrent spectra of porous-silicon-based devices, when compared to that of a p-type Si/Au diode, suggests that carriers photogenerated within porous silicon can be collected in an external circuit.

Photovoltaic Characterization of Trapping in Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
D. W. Boeringer ◽  
R. Tsu
Keyword(s):  
Porous Silicon ◽  
Photovoltaic Effect ◽  
Light Spot ◽  
Dangling Bond ◽  
Photogenerated Electrons ◽  
Device Applications ◽  
Photovoltaic Characterization ◽  
P Type ◽  
Silicon Based ◽  
Position Sensitive Detectors

ABSTRACTWe report the first observation of the lateral photovoltaic effect in porous silicon. Contacts placed on either side of a porous silicon region develop a voltage up to several millivolts if the sample is asymmetrically illuminated. If the light spot is closer to one contact, the voltage will have one polarity; if it is closer to the other contact, the polarity will be opposite. In the case of n-type, the contact nearest the light spot is positive; for p-type, the contact nearest the light spot is negative In the region between the contacts, the photovoltage varies almost linearly with the position of the light spot, over a distance 4.5 cm across. The origin of our lateral photoeffect may be explained by the trapping of photoexcited carriers by a pair of dangling bond centers in porous silicon. In the case of p-type, the photogenerated electrons are trapped by the dangling bond states while holes diffuse away in the substrate. The situation for n-type is opposite; holes are trapped by the dangling bond states while electrons diffuse away in the substrate. This differs from the conventional lateral photoeffect, which arises under the nonuniform illumination of a junction between two layers of differing conductivities. Hamamatsu sells silicon-based position-sensitive detectors with a resolution down to 0.1 µm. The possibility of using this lateral photoeffect to characterize these dangling bond states in porous silicon as well as several possible device applications will be discussed.

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Multi-carrier transport properties in p-type ZnO thin films

2009 ◽  
Vol 149 (39-40) ◽  
pp. 1628-1632 ◽  
Author(s):  
H.B. Ye ◽  
J.F. Kong ◽  
W. Pan ◽  
W.Z. Shen ◽  
B. Wang
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Carrier Transport ◽  
Zno Thin Films ◽  
P Type ◽  
Carrier Transport Properties

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 811-814 ◽  
Author(s):  
Mariaconcetta Canino ◽  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Francesco Moscatelli ◽  
Roberta Nipoti ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Transport Properties ◽  
Current Transport ◽  
Step Bunching ◽  
Excess Current ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
P Type

This paper reports on the defects created in a 6H-SiC p-type substrate by a process of ion implantation and a quite low temperature annealing (1300 °C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current.

Development of Porous Silicon Based Visible Light Photodetectors

2013 ◽  
Vol 538 ◽  
pp. 341-344 ◽  
Author(s):  
Yuan Ming Huang ◽  
Qing Lan Ma ◽  
Bao Gai Zhai
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Silicon Film ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
Current Voltage Characteristics ◽  
Silicon Based ◽  
Scanning Electron ◽  
Tungsten Lamp

Porous silicon based visible light photodetectors with the characteristic structures of Al/porous silicon/Si were developed by evaporating aluminum contact onto the top surface of porous silicon films to form metal-semiconductor-metal Schottky junctions. The spongy nanostructures of the porous silicon film were characterized with the scanning electron microscopy. The current-voltage characteristics, the biased voltage dependent photocurrents and the illumination intensity dependent photocurrents were measured for the Al/porous silicon/Si visible light photodetectors. It is found that the photocurrents as large as 4 mA/cm2 can be achieved for the porous silicon based visible light photodetectors under the normal illumination of one 500 W tungsten lamp

Magnetic and carrier transport properties of Mn-doped p-type semiconductor LaCuOSe: An investigation of the origin of ferromagnetism

2006 ◽  
Vol 100 (3) ◽  
pp. 033717 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Shuichi Ohno ◽  
Toshio Kamiya ◽  
Hidenori Hiramatsu ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Transport Properties ◽  
Carrier Transport ◽  
Type Semiconductor ◽  
P Type ◽  
Mn Doped ◽  
Carrier Transport Properties

On Similar Electrical, Optical and Structural Properties of MOS Structures Prepared on a-Si:H/c-Si, Porous Silicon/c-Si, and c-Si

2009 ◽  
Vol 609 ◽  
pp. 11-25
Author(s):  
Emil Pinčík ◽  
Hikaru Kobayashi ◽  
Róbert Brunner ◽  
Masao Takahashi ◽  
Jaroslav Rusnák ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Structural Properties ◽  
Deep Level ◽  
Grazing Incidence ◽  
Flat Band ◽  
Light Illumination ◽  
Transient Spectroscopy ◽  
P Type ◽  
Silicon Based ◽  
Mos Structures

The paper presents results of research of similar electrical, optical and structural properties of three types of MOS structures prepared on different Si-based semiconductors. Electrical interface properties are investigated by institutionally produced equipment with Charge Version of Deep Level Transient Spectroscopy and time domain C-V. X-ray diffraction at grazing incidence angles is applied to control their structural properties. Optical properties of selected structures are investigated by photoluminescence measurements at liquid helium temperature (approx. 6K in cryostat). Dominant interest is focused on analysis of both electrical properties of MOS porous silicon based structures prepared on p-type crystalline Si and photoluminescence signals of the structures observed around 1.1 eV, respectively. Such parameters as Fermi level position, flat-band voltage, surface potential, position of deep level hole traps, and acceptor density are calculated for various conditions as defined by sample ambient, temperature, and light illumination. Following two main findings are analyzed: i) total suppression of large C-V hysteresis due to suitable illumination and ii) recovering of part of detected interface states in the dark.

In-Situ Photoluminescence Investigation of the Initial Porous Silicon Formation in 0.2M NH4F (pH 3.2)

1996 ◽  
Vol 452 ◽  
Author(s):  
T. Dittrich ◽  
V. Y. Timoshenko ◽  
J. Rappich
Keyword(s):  
Porous Silicon ◽  
Surface Recombination ◽  
Current Switch ◽  
Current Voltage ◽  
Galvanostatic Regime ◽  
Pl Intensity ◽  
Rapid Current ◽  
Si Nanostructures ◽  
P Type

AbstractThe porous silicon (por-Si) formation in 0.2M NH4F (pH 3.2) is investigated in-situ by photoluminescence (PL). The p-type Si(100) samples are treated electrochemically in the galvanostatic regime starting from Ihe hydrogenated surface. Single pulses of a N2 laser are used to probe stroboscopically the radiative band-band recombination of the bulk c-Si and the PL of por-Si. The PL intensity of c-Si is correlated with the current density during the current-voltage scan and indicates changes of surface recombination by the onset of chemical reactions. The PL intensity of c-Si increases rapidly after switching off the anodic current while the PL intensity of por-Si is not influenced by the rapid current switch. This shows that the passivation of the surfaces of the Si nanostructures is not affected by the por-Si formation at the surface of the bulk c-Si.

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