Modeling of Be Diffusion in InGaAs Epitaxial Structures

1996 ◽  
Vol 450 ◽  
Author(s):  
S. Gautier ◽  
S. Koumetz ◽  
J. Marcon ◽  
K. Ketata ◽  
M. Ketata ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Secondary Ion Mass Spectrometry ◽  
Bipolar Transistors ◽  
Thermal Treatments ◽  
Chemical Beam Epitaxy ◽  
Interstitial Diffusion ◽  
Depth Profiles ◽  
State Diffusion ◽  
Diffusion Mechanisms ◽  
Diffusion Profiles

ABSTRACTThe subject of this work is the simulation of Be diffusion during post-growth Rapid Thermal Annealing (RTA) of InGaAs epitaxial layers grown by Chemical Beam Epitaxy (CBE). This diffusion may occur during thermal treatments of InGaAs/InP Heterojunction Bipolar Transistors (HBT's), which contributes to limit the frequency performances of these devices. In order to characterize the Be depth profiles, Secondary Ion Mass Spectrometry (SIMS) has been used. The concentration dependent diffusivity has been covered to perform an improved data fitting of Be diffusion profiles. In a first step, the solid state diffusion mechanisms have been developed, including the Substitutional-Interstitial Diffusion (SID) and, in particular, Kick-out mechanism. To explain the observed concentration profiles and related diffusion mechanisms, a Generalized Substitutional-Interstitial Diffusion model is proposed. A simultaneous diffusion by Dissociative and Kick-out mechanisms is suggested. Good agreements between experimental depth profiles and simulated curves have been obtained.

A Generalized Model of Beryllium Diffusion in InGaASs Epitaxial Structures Under Point Defect Nonequilibrium Conditions

1997 ◽  
Vol 470 ◽  
Author(s):  
S. Gautier ◽  
S. Koumetz ◽  
J. Marcon ◽  
K. Ketata ◽  
M. Ketata ◽  
...  
Keyword(s):  
Point Defect ◽  
Diffusion Model ◽  
Heterojunction Bipolar Transistors ◽  
Secondary Ion Mass Spectrometry ◽  
Bipolar Transistors ◽  
Thermal Treatments ◽  
Chemical Beam Epitaxy ◽  
Gas Source ◽  
Nonequilibrium Conditions ◽  
Secondary Ion

ABSTRACTBeryllium diffusion during post-growth annealing is investigated in InGaAs epitaxial layers. Indeed, this undesirable diffusion may occur during thermal treatments of InGaAs/lnP Heterojunction Bipolar Transistors (HBT's), which can generate a limitation of frequency performances of these devices. Epitaxial structures have then been grown, one set by Chemical Beam Epitaxy (CBE), and another one by Gas Source Molecular Beam Epitaxy (GSMBE). The post-growth Rapid Thermal Annealing (RTA) was then performed, and Secondary Ion Mass Spectrometry (SIMS) has been used to characterize the Be depht profiles.In parallel with our experimental study, we propose two models of Be diffusion in InGaAs in the case of point defect nonequilibrium. First, a Kick-out Diffusion model considering neutral Be interstitial species and charged point defects has been studied. Then, a Generalized Substitutional-Interstitial Diffusion model based on simultaneous diffusion by Dissociative and Kick-out mechanisms is proposed. Good agreements between experimental depth profiles and simulated curves have been obtained.

The effect of emitter layer variations on the current gain of AlGaAs-GaAs heterojunction bipolar transistors grown by chemical beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 230-234 ◽  
Author(s):  
W.T. Moore ◽  
A.J. SpringThorpe ◽  
T.P. Lester ◽  
S. Eicher ◽  
R.K. Surridge ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Chemical Beam Epitaxy ◽  
Emitter Layer

High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy

1993 ◽  
Vol 29 (8) ◽  
pp. 666 ◽  
Author(s):  
J.-I. Song ◽  
C.J. Palmstrom ◽  
B.P. Van der Gaag ◽  
W.-P. Hong ◽  
J.R. Hayes ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Bipolar Transistors ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped

scholarly journals Redistribution of Metallic Impurities in Si during Annealing and Oxidation: W and Fe

2018 ◽  
Vol 383 ◽  
pp. 17-22
Author(s):  
Alain Portavoce ◽  
Anthony De Luca ◽  
Nelly Burle ◽  
Michaël Texier
Keyword(s):  
Isothermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Dissolution Mechanism ◽  
Transmission Electron ◽  
Diffusion Mechanisms ◽  
Core Shell Structure ◽  
Secondary Ion ◽  
Metallic Impurities ◽  
Diffusion Profiles ◽  
Si Wafer

Atomic redistribution of W and Fe in Si were studied using secondary ion mass spectrometry and transmission electron microscopy. W diffusion experiments performed during isothermal annealing and during Si oxidation show that W atoms should use at least two different diffusion mechanisms. Experimental diffusion profiles can be well simulated by considering the simultaneous use of three different W diffusion mechanisms: the dissociative and the kick-out mechanisms, as well as an original mechanism based on the formation of a W-Si self-interstitial pair located on the interstitial Si sub-lattice. Fe redistribution was studied during the oxidation of a Fe-contaminated Si wafer. Fe is shown to be first pushed-out in Si by the mobile SiO2/Si interface, and thus to form Fe silicides precipitates at this interface. The silicide precipitates, which can exhibit a core-shell structure, appear to move with the SiO2/Si interface thanks to an oxidation/dissolution mechanism in the SiO2 and a nucleation/growth mechanism in the Si matrix. Furthermore, the rate difference between Si and Fe silicide precipitate oxidation leads to the formation of Si pyramidal defects at the SiO2/Si interface.

Characterization of AlGaAs/GaAs Heterojunction Bipolar Transistors Using Photoreflectance and Spectral Ellipsometry

1995 ◽  
Vol 406 ◽  
Author(s):  
Patricia B. Smith ◽  
Tae S. Kim ◽  
Lissa K. Magel ◽  
Walter M. Duncan ◽  
A. Vance Ley ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Electrical Characterization ◽  
Contact Layer ◽  
Bipolar Transistors ◽  
Spectral Ellipsometry ◽  
Depth Profiles ◽  
Auger Electron Spectroscopy Depth ◽  
Capacitance Voltage ◽  
Layer Composition

AbstractPhotoreflectance spectroscopy (PR) and spectral ellipsometry (SE) have been used to characterize the doping and structure of heterojunction bipolar transistors (HBT). This information provides a more complete description of the epitaxial HBT structure than is possible by relying solely on electrical characterization of specially processed test structures. Additional benefit is derived from the nondestructive nature of both SE and PR. The measurements are fast enough to be implemented on all production-bound HBT material. We describe our recent results comparing capacitance-voltage measurements with PRderived doping levels in the emitter layer of the HBT. We also describe some work comparing SE fit results with Auger electron spectroscopy depth profiles for InGaAs contact layer composition and thickness.

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