Resonant-Cavity Infrared Devices

1996 ◽  
Vol 450 ◽  
Author(s):  
J. L. Pautrat ◽  
E. Hadji ◽  
G. Mula ◽  
J. Bleuse ◽  
N. Magnea

ABSTRACTThe CdxHg1−x Te compounds are well suited to the design of semiconducting devices incorporating an optical microresonator since they display a wide variation of bandgap and refractive index with composition x, while the lattice parameter remains practically unchanged. It is then possible to create a specific optical function by stacking high quality pseudomorphic layers on a crystalline substrate.Microcavities resonating in the 3–5 μm range have been made by growing a lower Bragg mirror (10.5 periods) and a nominally undoped cavity medium containing a 50 nm active layer (CdTe-HgTe pseudo-alloy). The upper mirror is a gold layer deposited on the cavity. The emission of these Resonant Cavity Light Emitting Diodes has been observed in the 3–4.5 μm range up to room temperature. It coincides with the cavity resonance mode (linewidth 8 meV). With the addition of a ZnS/YF3 upper mirror, a Vertical Cavity Surface Emitting Laser at 3.06 μm has also been demonstrated.The microcavity concept appears to be very useful for designing new devices for the 3–5 μm range.

2005 ◽  
Vol 87 (3) ◽  
pp. 031109 ◽  
Author(s):  
Jin-Wei Shi ◽  
C.-H. Jiang ◽  
K.-M. Chen ◽  
J.-L. Yen ◽  
Ying-Jay Yang

Author(s):  
Angélique Rissons ◽  
Jean-Claude Mollier

The proposal chapter aims at highlighting the tremendous emergence of the Vertical-Cavity Surface- Emitting Laser (VCSEL) in the FTTX systems. The VCSEL is probably one of the most important and promising components of the “last-leg” Optical Access Networks. To satisfy the bandwidth rise as well as the inexpensive design constraints, the VCSEL has found its place between the Light-Emitting-Diode (LED) and the Edge-Emitting-Laser (EEL) such as the DFB (Distributed-Feedback) laser. Hence, the authors dedicate a chapter to the promising VCSEL technology that aims to give an overview of the advances, the physical behavior, and the various structures regarding VCSELs. They discuss the VCSEL features and performance to weigh up the specific advantages and the weaknesses of the existing technology. Finally, diverse potentials of Optical Access Network architectures are discussed.


2002 ◽  
Vol 722 ◽  
Author(s):  
C. Kruse ◽  
G. Alexe ◽  
R. Kröger ◽  
M. Klude ◽  
H. Heinke ◽  
...  

AbstractIn this paper, we are investigating the growth of a ZnSe based vertical cavity surface emitting laser (VCSEL). Undoped and p-type doped distributed Bragg reflectors (DBRs) with reflectivities exceeding 99% have been grown by molecular beam epitaxy (MBE) using Zn(S)Se layers for the high refractive index material and ZnSe/MgS superlattices (SLs) for the low index material. An undoped monolithic VCSEL structure containing a ZnCdSSe quantum well (QW) emitting in the blue-green reaches a quality factor (Q-factor) of 100, which is the best value reported so far. Temperature dependent photoluminescence (PL) measurements show that the emission of the QW is effectively guided by the cavity resonance.


2003 ◽  
Vol 76 (5) ◽  
pp. 603-608 ◽  
Author(s):  
G. Totschnig ◽  
M. Lackner ◽  
R. Shau ◽  
M. Ortsiefer ◽  
J. Rosskopf ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document