Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes

1999 ◽  
Vol 74 (7) ◽  
pp. 926-928 ◽  
Author(s):  
J. J. Wierer ◽  
D. A. Kellogg ◽  
N. Holonyak
Keyword(s):  
Resonant Cavity ◽  
Native Oxide ◽  
Cavity Surface ◽  
Light Emitting ◽  
Tunnel Contact ◽  
Oxide Aperture ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Microstructure and Interfacial Properties of Laterally Oxidized AlxGa1-xAs

1996 ◽  
Vol 448 ◽  
Author(s):  
R.D. Twesten ◽  
D. M. Follstaedt ◽  
K. D. Choquette
Keyword(s):  
Cavity Surface ◽  
Gamma Phase ◽  
Stress Concentrations ◽  
Al Content ◽  
Oxide Aperture ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
High Al Content ◽  
Vertical Cavity

AbstractThe oxidation of high Al content AlxGa1-xAs has received much attention due to its use in oxide-aperture, vertical-cavity surface emitting lasers (VCSELs) and for passivating AlAs against environmental degradation. We have recently identified the spinel, gamma phase of Al2O3 in layers laterally oxidized in steam at 450°C for =0.98 & 0.92 and have seen evidence for an amorphous precursor to the gamma phase. At the interface with the unoxidized AlxGa1-xAs , an ~17nm amorphous phase remains which could account for the excellent electrical properties of oxide-confined VCSELs and help reduce stress concentrations at the oxide terminus.

Polarization-Stable 980nm Vertical-Cavity Surface-Emitting Lasers with Diamond-Shaped Oxide Aperture

2015 ◽  
Vol 32 (4) ◽  
pp. 044202 ◽  
Author(s):  
Hua Wu ◽  
Chong Li ◽  
Min-Fu Han ◽  
Wen-Juan Wang ◽  
Lei Shi ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Oxide Aperture ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity
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