GaAs/GaInP Quantum Well Intersubband Photodetectors for Focal Plane Array Infrared Imaging

1996 ◽  
Vol 450 ◽  
Author(s):  
C. Jelen ◽  
S. Slivken ◽  
G. J. Brown ◽  
M. Razeghi
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Dark Current ◽  
Focal Plane ◽  
Infrared Imaging ◽  
Focal Plane Array ◽  
Cutoff Wavelength ◽  
Long Wavelength ◽  
Gas Source ◽  
Array Imaging

ABSTRACTWe demonstrate long wavelength quantum well infrared photodetectors (QWIP) with GaAs quantum wells and GalnP barriers grown using gas-source molecular beam epitaxy. Wafers were grown with varying well widths. The optimum well width was 75 Å, which resulted in a detection peak at 13 μm and a cutoff wavelength of 15 μm Dark current measurements of the samples with 15 μm cutoff wavelength show low dark current densities. Preliminary focal plane array imaging is demonstrated.

InGaAs/GaAsSb type-II quantum-well focal plane array with cutoff-wavelength of 2.5 μm

2017 ◽  
Author(s):  
T. Kawahara ◽  
K. Machinaga ◽  
B. Sundararajan ◽  
K. Miura ◽  
M. Migita ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Focal Plane Array ◽  
Cutoff Wavelength ◽  
Type Ii

P-Type Quantum Well Infrared Photodetectors Grown by OMVPE

1991 ◽  
Vol 240 ◽  
Author(s):  
W. S. Hobson ◽  
A. Zussman ◽  
J. De Jong ◽  
B. F. Levine
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Cutoff Wavelength ◽  
Peak Wavelength ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
Intersubband Absorption ◽  
P Type

ABSTRACTWe report on the growth and fabrication of p-doped long wavelength GaAs/AlxGa1−x As quantum well infrared photodetectors (QWIP) grown by organometallic vapor phase epitaxy. The operation of these devices is based on the photocurrent induced through valence band intersubband absorption by holes and, unlike n-doped QWIPs, can utilize normal incidence illumination. Carbon and zinc were used as the p-type dopants in a low-pressure (30 Torr) vertical-geometry reactor. The Zn-doped QWIP consisted of fifty periods of 48 nm-thick undoped Al0.36Ga0.64As barriers and nominally 4 nm-thick doped GaAs quantum wells. Using normal incidence, a quantum efficiency of η = 2.5% and a detectivity of at 77K were obtained for a peak wavelength λp = 6.8 μm and a cutoff wavelength λ∫ =7.6 μm. The C-doped QWIP had 54 nm-thick Al0.31Ga0.69As barriers and exhibited a normal incidence These initial studies indicate the superiority of carbon to zinc as the p-type dopant for these structures. The detectivity of the C-doped QWIPs is about four times less than n-doped QWIPs for the same λp but have the advantage of utilizing normal incidence illumination.

scholarly journals Diagnosing malaria infected cells at the single cell level using focal plane array Fourier transform infrared imaging spectroscopy

The Analyst ◽  
2014 ◽  
Vol 139 (19) ◽  
pp. 4769-4774 ◽  
Author(s):  
Bayden R. Wood ◽  
Keith. R. Bambery ◽  
Matthew W. A. Dixon ◽  
Leann Tilley ◽  
Michael J. Nasse ◽  
...  
Keyword(s):  
Focal Plane ◽  
Blood Smear ◽  
Infrared Imaging ◽  
Imaging Spectroscopy ◽  
Focal Plane Array ◽  
Single Cell Level ◽  
Cell Level ◽  
Infected Cells ◽  
Fourier Transform Infrared Imaging ◽  
Array Imaging

FTIR focal plane array imaging can be applied to diagnose single malaria infected cells in a thick film blood smear.

GaAs/AlGaAs MULTI-QUANTUM WELL-BASED INFRARED FOCAL PLANE ARRAYS FOR INFRARED IMAGING APPLICATIONS

2002 ◽  
Vol 12 (03) ◽  
pp. 691-713 ◽  
Author(s):  
S. D. GUNAPALA ◽  
S. V. BANDARA
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Infrared Imaging ◽  
Broad Band ◽  
Focal Plane Arrays ◽  
Dual Band ◽  
Infrared Focal Plane Arrays ◽  
Long Wavelength ◽  
Imaging Camera ◽  
Multi Quantum Well

New infrared focal plane arrays (FPAs) with multi-spectral coverage, high sensitivity, and lower manufacturing costs are required for many ground-based and space-based infrared imaging applications, One of the most promising FPA technologies is a GaAs/AlGaAs based Quantum Well Infrared Photodetector (QWIP) FPAs. In this paper we discuss the importance of focal plane array non-uniformity on the performance, demonstrations of varies infrared imaging cameras based on narrow-band QWIP FPAs, demonstration of long-wavelength/very long-wavelength dual-band QWIP imaging camera, demonstration of the first broad-band QWIP imaging camera, and a novel multi-quantum-well based infrared detection device structure for low-background and low-temperature operations.

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