A Multilayer Resist for Direct Write Ion Beam Lithography

1985 ◽  
Vol 45 ◽  
Author(s):  
A. A. Milgram ◽  
J. Puretz
Keyword(s):  
Line Width ◽  
Focused Ion Beam ◽  
Layer Structure ◽  
Ion Beam ◽  
Vertical Wall ◽  
Spot Size ◽  
Implantation Dose ◽  
Direct Write ◽  
Plasma Etch ◽  
Ion Beam Lithography

ABSTRACTA focused ion beam of gallium was used to implant into the top layer of a bi-layer structure on a silicon wafer. The structures studied were spin-on glass/organic and electron beam deposited Si/organic. Plasma etch conditions were found which gave substantial etch rate differences between the implanted and non-implanted material. The material was then patterned by dry processing methods. The plasma etch produces a vertical wall 2.0 µm high with a rectangular profile free of debris. The variation in line width along the line is a small fraction of the line width. Or, the line width is constant along the line and is approximately equal to 0.4µm, the spot size of the focused ion beam on the wafer. The variation in line width as a function of implantation dose was determined and shown capable of yielding a reproducible line width. The results are shown to be superior to single resist exposure. Potential applications are presented.

scholarly journals Direct-Write Ion Beam Lithography

2014 ◽  
Vol 2014 ◽  
pp. 1-26 ◽  
Author(s):  
Alexandra Joshi-Imre ◽  
Sven Bauerdick
Keyword(s):  
Surface Functionalization ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Direct Write ◽  
Direct Writing ◽  
Ion Beam Lithography ◽  
Processing Step ◽  
The Individual ◽  
Process Speed

Patterning with a focused ion beam (FIB) is an extremely versatile fabrication process that can be used to create microscale and nanoscale designs on the surface of practically any solid sample material. Based on the type of ion-sample interaction utilized, FIB-based manufacturing can be both subtractive and additive, even in the same processing step. Indeed, the capability of easily creating three-dimensional patterns and shaping objects by milling and deposition is probably the most recognized feature of ion beam lithography (IBL) and micromachining. However, there exist several other techniques, such as ion implantation- and ion damage-based patterning and surface functionalization types of processes that have emerged as valuable additions to the nanofabrication toolkit and that are less widely known. While fabrication throughput, in general, is arguably low due to the serial nature of the direct-writing process, speed is not necessarily a problem in these IBL applications that work with small ion doses. Here we provide a comprehensive review of ion beam lithography in general and a practical guide to the individual IBL techniques developed to date. Special attention is given to applications in nanofabrication.

scholarly journals Direct-write Focused Ion Beam Lithography

2010 ◽  
Vol 16 (S2) ◽  
pp. 194-195 ◽  
Author(s):  
A Joshi-Imre ◽  
L Ocola ◽  
J Klingfus
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Write ◽  
Ion Beam Lithography

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

scholarly journals Helium focused ion beam direct milling of plasmonic heptamer-arranged nanohole arrays

Nanophotonics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 393-399 ◽  
Author(s):  
Choloong Hahn ◽  
Akram Hajebifard ◽  
Pierre Berini
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Spot Size ◽  
Direct Write ◽  
Drift Correction ◽  
Optical Resonance ◽  
Ionization Source ◽  
Gas Field ◽  
Correction Technique ◽  
20 Nm

AbstractWe fabricate plasmonic heptamer-arranged nanohole (HNH) arrays by helium (He) focused ion beam (HeFIB) milling, which is a resist-free, maskless, direct-write method. The small He+ beam spot size and high milling resolution achieved by the gas field-ionization source used in our HeFIB allows the milling of high aspect ratio (4:1) nanoscale features in metal, such as HNHs incorporating 15 nm walls of high verticality between holes in a 55-nm-thick gold film. Drifts encountered during the HeFIB milling of large arrays, due to sample stage vibrations or He beam instability, were compensated by a drift correction technique based on in situ He ion imaging of alignment features. Our drift correction technique yielded 20 nm maximum dislocation of HNHs, with 6.9 and 4.6 nm average dislocations along the horizontal and vertical directions, respectively. The measured optical resonance spectra of the fabricated plasmonic HNH arrays are presented to support the fabrication technique. Defects associated with HeFIB milling are also discussed.

scholarly journals Direct-write, focused ion beam-deposited, 7 K superconducting C–Ga–O nanowire

2010 ◽  
Vol 96 (26) ◽  
pp. 262511 ◽  
Author(s):  
Pashupati Dhakal ◽  
G. McMahon ◽  
S. Shepard ◽  
T. Kirkpatrick ◽  
J. I. Oh ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Write

Microstructures of GaAs fabricated by finely focused ion beam lithography

1989 ◽  
Vol 9 (1-4) ◽  
pp. 277-279 ◽  
Author(s):  
Takao Shiokawa ◽  
Pil Hyon Kim ◽  
Manabu Hamagaki ◽  
Tamio Hara ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography

PLANAR JOSEPHSON JUNCTIONS FABRICATED BY FOCUSED-ION BEAM

2001 ◽  
Vol 15 (24n25) ◽  
pp. 3359-3360 ◽  
Author(s):  
Hye-Won Seo ◽  
Quark Y. Chen ◽  
Chong Wang ◽  
Wei-Kan Chu ◽  
T. M. Chuang ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Spot Size ◽  
Physical Significance ◽  
Fabrication Technique ◽  
Beam Spot ◽  
Beam Spot Size ◽  
Current Voltage

We have fabricated nano-scaled planar superconductor-insulator-superconductor Josephson junctions using focused ion beam (FIB) with beam spot size ~5 nm . To study the effectiveness of this fabrication technique and for the purpose of comparisons, a variety of samples have been made based on high temperature superconducting (HTS) YBa2Cu3O7-δ electrodes. The insulators are either vacuum or silicon dioxide. The samples showed current-voltage (IV) characteristics typical of a resistively shunted junction (RSJ). We will discuss various aspects of the processing methods and the physical significance of the junction characteristics.

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

2007 ◽  
Vol 18 (46) ◽  
pp. 465302 ◽  
Author(s):  
Ali Ozhan Altun ◽  
Jun-Ho Jeong ◽  
Jong-Joo Rha ◽  
Ki-Don Kim ◽  
Eung-Sug Lee
Keyword(s):  
Boron Nitride ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ultra Violet ◽  
Ion Beam Lithography
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