Large area direct-write focused ion-beam lithography with a dual-beam microscope

2010 ◽  
Vol 28 (2) ◽  
pp. 304-309 ◽  
Author(s):  
Alexandra Imre ◽  
Leonidas E. Ocola ◽  
Lauren Rich ◽  
Joseph Klingfus
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Write ◽  
Large Area ◽  
Ion Beam Lithography ◽  
Dual Beam

Deposition Mechanism of Oxide Thin Films Manufactured by a Focused Energetic Beam Process

2002 ◽  
Vol 749 ◽  
Author(s):  
H.D. Wanzenboeck ◽  
S. Harasek ◽  
H. Langfischer ◽  
E. Bertagnolli
Keyword(s):  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Solid Material ◽  
Sample Surface ◽  
Direct Write ◽  
Large Area ◽  
Mixture Ratio ◽  
Process Energy

ABSTRACTChemical vapor deposition (CVD) is a versatile deposition technique for both dielectrics and metals. CVD is based upon the adsorption of a volatile species from the gas phase and the decomposition of the adsorbed molecules on the sample surface resulting in the deposition of solid material. In contrast to thermal CVD or plasma assisted CVD used for large area coatings this work focuses on a method for locally confined deposition. A focused energetic beam is used to provide the necessary activation energy for CVD. With a focused beam material could be deposited locally within a strictly confined area down to the nanometer range. The deposition of silicon oxide microstructures utilizing two precursor gases - siloxane and oxygen - was performed by direct-write nanolithography. For initiating the CVD process energy is introduced by local ion exposure utilizing a scanning focused ion beam (FIB). The influence of the different ion fluxes and the effect of the mixture ratio of precursors were studied. Deliberate changes in the process parameters allowed adjusting the physical properties and the chemical composition of the solid silicon oxide. Process control allows tailoring of material properties according to requirements of the application.

scholarly journals Direct-Write Ion Beam Lithography

2014 ◽  
Vol 2014 ◽  
pp. 1-26 ◽  
Author(s):  
Alexandra Joshi-Imre ◽  
Sven Bauerdick
Keyword(s):  
Surface Functionalization ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Direct Write ◽  
Direct Writing ◽  
Ion Beam Lithography ◽  
Processing Step ◽  
The Individual ◽  
Process Speed

Patterning with a focused ion beam (FIB) is an extremely versatile fabrication process that can be used to create microscale and nanoscale designs on the surface of practically any solid sample material. Based on the type of ion-sample interaction utilized, FIB-based manufacturing can be both subtractive and additive, even in the same processing step. Indeed, the capability of easily creating three-dimensional patterns and shaping objects by milling and deposition is probably the most recognized feature of ion beam lithography (IBL) and micromachining. However, there exist several other techniques, such as ion implantation- and ion damage-based patterning and surface functionalization types of processes that have emerged as valuable additions to the nanofabrication toolkit and that are less widely known. While fabrication throughput, in general, is arguably low due to the serial nature of the direct-writing process, speed is not necessarily a problem in these IBL applications that work with small ion doses. Here we provide a comprehensive review of ion beam lithography in general and a practical guide to the individual IBL techniques developed to date. Special attention is given to applications in nanofabrication.

scholarly journals Direct-write Focused Ion Beam Lithography

2010 ◽  
Vol 16 (S2) ◽  
pp. 194-195 ◽  
Author(s):  
A Joshi-Imre ◽  
L Ocola ◽  
J Klingfus
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Write ◽  
Ion Beam Lithography

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

TWO-DIMENSIONAL SILICON-BASED PHOTONIC CRYSTAL SLAB WITH PARTIAL AIR-BRIDGE

2006 ◽  
Vol 05 (06) ◽  
pp. 683-687 ◽  
Author(s):  
JIE TIAN ◽  
SHOU-ZHEN HAN ◽  
BING-YING CHENG ◽  
SHUAI FENG ◽  
ZHI-YUAN LI ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Focused Ion Beam ◽  
Near Infrared ◽  
Ion Beam ◽  
Fdtd Method ◽  
Direct Write ◽  
Silica Layer ◽  
Two Dimensional ◽  
Large Area ◽  
Silicon Based

We describe a fabrication process of the near-infrared two-dimensional photonic crystal (PC) slab, which is sustained by part of the silica layer underneath the slab and forms a partly air-bridged type. The process involves focused ion beam (FIB) direct write following the selective wet etching of silicon on isolator (SOI) structures. By control the time of dissolving of silica layer in SOI, we successfully fabricated the sample and measured its transmittance spectrum. It is found that the observed spectrum is consistent with the theoretical band structure with FDTD method. For there is partly silica layer remained to support the air-bridge slab, the PC can be fabricated with a large area. If we change the support material under the slab, we might be able to fabricate PC laser with this kind of structure.

A Multilayer Resist for Direct Write Ion Beam Lithography

1985 ◽  
Vol 45 ◽  
Author(s):  
A. A. Milgram ◽  
J. Puretz
Keyword(s):  
Line Width ◽  
Focused Ion Beam ◽  
Layer Structure ◽  
Ion Beam ◽  
Vertical Wall ◽  
Spot Size ◽  
Implantation Dose ◽  
Direct Write ◽  
Plasma Etch ◽  
Ion Beam Lithography

ABSTRACTA focused ion beam of gallium was used to implant into the top layer of a bi-layer structure on a silicon wafer. The structures studied were spin-on glass/organic and electron beam deposited Si/organic. Plasma etch conditions were found which gave substantial etch rate differences between the implanted and non-implanted material. The material was then patterned by dry processing methods. The plasma etch produces a vertical wall 2.0 µm high with a rectangular profile free of debris. The variation in line width along the line is a small fraction of the line width. Or, the line width is constant along the line and is approximately equal to 0.4µm, the spot size of the focused ion beam on the wafer. The variation in line width as a function of implantation dose was determined and shown capable of yielding a reproducible line width. The results are shown to be superior to single resist exposure. Potential applications are presented.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Manufacturing In-Line Whole Wafer Focused Ion Beam (FIB) Memory Address Descramble Verification

2008 ◽  
Author(s):  
Steven B. Herschbein ◽  
Hyoung H. Kang ◽  
Scott L. Jansen ◽  
Andrew S. Dalton
Keyword(s):  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Random Access ◽  
Cell Counting ◽  
Test Results ◽  
Laboratory Procedure ◽  
Memory Array ◽  
Dual Beam ◽  
Process Level

Abstract Test engineers and failure analyst familiar with random access memory arrays have probably encountered the frustration of dealing with address descrambling. The resulting nonsequential internal bit cell counting scheme often means that the location of the failing cell under investigation is nowhere near where it is expected to be. A logical to physical algorithm for decoding the standard library block might have been provided with the design, but is it still correct now that the array has been halved and inverted to fit the available space in a new processor chip? Off-line labs have traditionally been tasked with array layout verification. In the past, hard and soft failures could be induced on the frontside of finished product, then bitmapped to see if the sites were in agreement. As density tightened, flip-chip FIB techniques to induce a pattern of hard fails on packaged devices came into practice. While the backside FIB edit method is effective, it is complex and expensive. The installation of an in-line Dual Beam FIB created new opportunities to move FA tasks out of the lab and into the FAB. Using a new edit procedure, selected wafers have an extensive pattern of defects 'written' directly into the memory array at an early process level. Bitmapping of the RAM blocks upon wafer completion is then used to verify correlation between the physical damaged cells and the logical sites called out in the test results. This early feedback in-line methodology has worked so well that it has almost entirely displaced the complex laboratory procedure of backside FIB memory array descramble verification.

Ion Beam Imaging Methodology of Invisible Metal under Insulator Using High Energy Electron Beam Charging

2007 ◽  
Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
High Energy ◽  
Advanced Technology ◽  
High Energy Electron ◽  
Common Assumption ◽  
Dual Beam ◽  
Imaging Methodology

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.

scholarly journals Direct-write, focused ion beam-deposited, 7 K superconducting C–Ga–O nanowire

2010 ◽  
Vol 96 (26) ◽  
pp. 262511 ◽  
Author(s):  
Pashupati Dhakal ◽  
G. McMahon ◽  
S. Shepard ◽  
T. Kirkpatrick ◽  
J. I. Oh ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Write
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